Patents by Inventor Chin-hao Chou

Chin-hao Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240327614
    Abstract: A method for manufacturing a play-of-color article includes the steps of: (a) providing a first mixture that contains a solvent and a plurality of functionalized colloidal particles; (b) replacing the solvent of the first mixture with a polymer solution that contains polymers, thereby obtaining a second mixture; (c) adding an initiator to the second mixture to obtain a third mixture, followed by injecting the third mixture into a mold and disturbing the third mixture, so that the third mixture is formed with a pattern; (d) leaving the third mixture to stand, so as to allow the functionalized colloidal particles therein to self-assemble to form a crystalline arrangement, thereby obtaining a fourth mixture; and (e) subjecting the polymers in the fourth mixture to a cross-linking reaction, thereby obtaining the play-of-color article. A play-of-color article manufactured by the method, and a play-of-color product including the play-of-color article are also provided.
    Type: Application
    Filed: March 22, 2024
    Publication date: October 3, 2024
    Applicants: Taiwan Green Point Enterprises Co., Ltd., Jabil Circuit (Singapore) Pte. Ltd.
    Inventors: Yi-Chung Su, Chih-Wen Lin, Chin-Yen Chou, Jiun-Shiuan Hsu, Yen-Hao Lin, Chang-Yu Lin
  • Publication number: 20240283493
    Abstract: Various solutions for tiered channel information feedback with respect to user equipment and network apparatus in mobile communications are described. An apparatus may determine a first tier channel state information (CSI) based on a first reference signal resource measurement. The apparatus may report the first tier CSI to a network node. The apparatus may determine a second tier CSI based on the first tier CSI and based on a second reference signal resource measurement. The apparatus may report the second tier CSI to the network node. The second tier CSI may be different from the first tier CSI.
    Type: Application
    Filed: February 14, 2024
    Publication date: August 22, 2024
    Inventors: Chia-Hao Yu, Tzu-Han Chou, Jiann-Ching Guey, Chin-Kuo Jao, Parisa Cheraghi, Chun-Chia Tsai
  • Publication number: 20240258387
    Abstract: In an embodiment, a device includes: a first semiconductor nanostructure; a second semiconductor nanostructure adjacent the first semiconductor nanostructure; a first source/drain region on a first sidewall of the first semiconductor nanostructure; a second source/drain region on a second sidewall of the second semiconductor nanostructure, the second source/drain region completely separated from the first source/drain region; and a source/drain contact between the first source/drain region and the second source/drain region.
    Type: Application
    Filed: May 9, 2023
    Publication date: August 1, 2024
    Inventors: Yi-Syuan Siao, Meng-Han Chou, Chien-Yu Lin, Wei-Ting Chang, Tien-Shun Chang, Chin-I Kuan, Su-Hao Liu, Chi On Chui
  • Publication number: 20020020431
    Abstract: A method and an apparatus are provided for removing a mobile ion in a wafer. The apparatus includes a first inlet for providing a first reactant, a reaction region for generating an active substance with a charge from the first reactant, and a susceptor electrically connected to a voltage for disposing the wafer thereon to attract the active substance to a surface of the wafer and repulsing the mobile ion to the surface of the wafer to enable the mobile ion to react with the active substance to produce a material separable from the wafer.
    Type: Application
    Filed: October 4, 2001
    Publication date: February 21, 2002
    Inventor: Chin-Hao Chou
  • Patent number: 5861345
    Abstract: An in situ inter-dielectric process is disclosed for forming multilevel metal structures. The process includes the steps of:(1) forming an SOG layer on an uneven semiconductor surface,(2) treating a surface of the SOG layer with a plasma in a PECVD chamber, and(3) forming a PECVD oxide layer on the treated surface in the same PECVD chamber.The operating parameters for performing the in situ treatment are as follows:______________________________________ Gas: N.sub.2 O or C.sub.2 F.sub.6 Pressure: 4-6 Torr Temperature: 300-400.degree. C. Power: 200-400 Watts Gap: 300-800 mil Flow: 500-1500 sccm Time: 5-15 sec ______________________________________Thus, the treatment can be performed in the same PECVD chamber used to form a PECVD oxide layer on the treated SOG layer.Furthermore, the SOG layer surface may be oxidized to produce an organic deficient SiO.sub.x layer at the surface of the SOG layer prior to performing the treatment step (2).
    Type: Grant
    Filed: September 8, 1997
    Date of Patent: January 19, 1999
    Inventors: Chin-hao Chou, Yu-Chen Yang, Shing-Hsiang Hung