Patents by Inventor Chin Hsiang Chen

Chin Hsiang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240159269
    Abstract: A rotary bearing assembly is disclosed and includes an input shaft, an inner-ring component, an outer-ring component and a load element. The input shaft is configured to combine a rotating shaft of a motor to provide a power input. The inner-ring component includes a gear set, wherein the inner-ring component is sleeved on the input shaft through the gear set and driven by the input shaft. The outer-ring component is sleeved on the inner-ring component through a load element and engaged with the gear set, wherein when the gear set is driven by the input shaft to drive the inner-ring component, the gear set drives the outer-ring component, and the inner-ring component and the outer-ring component are rotated relatively, wherein one of the inner-ring component and the outer-ring component is served to provide a power output, and a rotational speed difference is between the power input and the power output.
    Type: Application
    Filed: August 8, 2023
    Publication date: May 16, 2024
    Inventors: Chi-Wen Chung, Hung-Wei Lin, Hsien-Lung Tsai, Wei-Ying Chu, Chin-Hsiang Chen
  • Patent number: 11983475
    Abstract: A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.
    Type: Grant
    Filed: February 7, 2023
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Pin-Dai Sue, Po-Hsiang Huang, Fong-Yuan Chang, Chi-Yu Lu, Sheng-Hsiung Chen, Chin-Chou Liu, Lee-Chung Lu, Yen-Hung Lin, Li-Chun Tien, Yi-Kan Cheng
  • Patent number: 11972537
    Abstract: A method for flattening a three-dimensional shoe upper template is provided. The method includes providing a three-dimensional last model, obtaining a three-dimensional grid model, obtaining a three-dimensional thickened grid model, obtaining a two-dimensional initial-value grid model, and obtaining a two-dimensional grid model with the smallest energy value. A system and a non-transitory computer-readable medium for performing the method are also provided. The method makes it possible to precisely flatten a three-dimensional last model with a non-developable surface and thereby convert the three-dimensional last model into a two-dimensional grid model.
    Type: Grant
    Filed: August 19, 2022
    Date of Patent: April 30, 2024
    Assignee: YU JUNG CHANG TECHNOLOGY CO., LTD.
    Inventors: Chih-Chuan Chen, Wei-Hsiang Tsai, Chin-Yu Chen, Ching-Cherng Sun, Jann-Long Chern, Yu-Kai Lin
  • Publication number: 20240128127
    Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.
    Type: Application
    Filed: December 28, 2023
    Publication date: April 18, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Kai Hsu, Ssu-l Fu, Chun-ya Chiu, Chi-Ting Wu, Chin-HUNG Chen, Yu-Hsiang Lin
  • Publication number: 20240105619
    Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 28, 2024
    Inventors: Fong-Yuan Chang, Noor Mohamed Ettuveettil, Po-Hsiang Huang, Sen-Bor Jan, Ming-Fa Chen, Chin-Chou Liu, Yi-Kan Cheng
  • Publication number: 20240105518
    Abstract: A first group of semiconductor fins are over a first region of a substrate, the substrate includes a first stepped profile between two of the first group of semiconductor fins, and the first stepped profile comprises a first lower step, two first upper steps, and two first step rises extending from opposite sides of the first lower step to the first upper steps. A second group of semiconductor fins are over a second region of the substrate, the substrate includes a second stepped profile between two of the second group of semiconductor fins, and the second stepped profile comprises a second lower step, two second upper steps, and two second step rises extending from opposite sides of the second lower step to the second upper steps, in which the second upper steps are wider than the first upper steps in the cross-sectional view.
    Type: Application
    Filed: January 11, 2023
    Publication date: March 28, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Ta CHEN, Han-Wei WU, Yuan-Hsiang LUNG, Hua-Tai LIN
  • Patent number: 11935757
    Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.
    Type: Grant
    Filed: April 10, 2023
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Hao Chen, Wei-Han Lai, Ching-Yu Chang, Chin-Hsiang Lin
  • Patent number: 11935894
    Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
    Type: Grant
    Filed: November 4, 2022
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fong-yuan Chang, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Chung-Te Lin, Jerry Chang Jui Kao, Sheng-Hsiung Chen, Chin-Chou Liu
  • Publication number: 20240088293
    Abstract: An n-type metal oxide semiconductor transistor includes a gate structure, two source/drain regions, two amorphous portions and a silicide. The gate structure is disposed on a substrate. The two source/drain regions are disposed in the substrate and respectively located at two sides of the gate structure, wherein at least one of the source/drain regions is formed with a dislocation. The two amorphous portions are respectively disposed in the two source/drain regions. The silicide is disposed on the two source/drain regions, wherein at least one portion of the silicide overlaps the two amorphous portions.
    Type: Application
    Filed: October 5, 2022
    Publication date: March 14, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ya Chiu, Ssu-I Fu, Chin-Hung Chen, Jin-Yan Chiou, Wei-Chuan Tsai, Yu-Hsiang Lin
  • Patent number: 11927940
    Abstract: A management method for a cutting tool of a machine tool is provided. A user host imports a graphical data of a workpiece and a cutting tool database into CAM, and a user may select cutting tools to establish a complete machining process. T codes are replaced with electronic tags. Before executing a machine code comprising the electronic tags, the machine tool re-scans the cutting tools assembled at a tool turret and updates cutting tool arrangement information to ensure that the tool turret is equipped with the cutting tools used in the machining process. When the machine tool stores the electronic tags, a ready message is displayed for reminding an operator. When the electronic tags are not stored, the current storage location of a cutting tool lacked in the machining process or a warning message is displayed at the operation interface for reminding the operator.
    Type: Grant
    Filed: March 31, 2023
    Date of Patent: March 12, 2024
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chao-Chuang Mai, Chin-Hui Chen, Chi-Hsiang Lin, Zi-Chiao Lin
  • Patent number: 11923302
    Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fong-Yuan Chang, Noor Mohamed Ettuveettil, Po-Hsiang Huang, Sen-Bor Jan, Ming-Fa Chen, Chin-Chou Liu, Yi-Kan Cheng
  • Patent number: 11555531
    Abstract: A cycloid speed reducer includes an input shaft, a rolling assembly, first and second cycloid discs, a crankshaft and an output disc. The first and second cycloid discs are disposed around the input shaft and driven by the input shaft. The first and second cycloid discs are located at two opposite sides of the rolling assembly, respectively. The crankshaft includes first and second eccentric ends and first and second concentric ends integrally formed as a one-piece structure and arranged sequentially. The first and second eccentric ends are linked with the first and second cycloid discs respectively. An eccentricity value is between any neighboring two of the concentric and eccentric ends. The diameters of all the concentric and eccentric ends are equal. The output disc is linked with the first or second concentric end. The output disc is a power output end of the cycloid speed reducer.
    Type: Grant
    Filed: April 29, 2022
    Date of Patent: January 17, 2023
    Assignee: DELTA ELECTRONICS, INC.
    Inventors: Chi-Wen Chung, Hung-Wei Lin, Wei-Ying Chu, Chin-Hsiang Chen
  • Publication number: 20160189879
    Abstract: A dye-sensitized solar cell includes a first substrate, a first electrode, a semiconductor layer, a thin photosensitive dye layer, an electrolyte layer, a second electrode and a second substrate. The first electrode is formed on the first substrate as a working electrode, the semiconductor layer is formed on the first electrode and the thin photosensitive dye layer is formed on the semiconductor layer by ultrasound-treating the semiconductor layer which is immersed in a photosensitive dye solution. The second electrode is formed on the second substrate as a counter electrode and the electrolyte layer is disposed between the semiconductor layer and the second electrode.
    Type: Application
    Filed: September 22, 2015
    Publication date: June 30, 2016
    Inventors: Shih-Kun Liu, Chin-Hsiang Chen, Yun-Ju Chu, Yi-Wei Wang, Yu-Hsuan Tsai
  • Patent number: 7054973
    Abstract: A computer system with collapsible keyboard and alternate display functions. The computer system includes a main body which stores at least one application. A monitor and collapsible keyboard are coupled to the main body, the keyboard disposable in an open operating position and a folded position. A signal generating device is coupled to both the collapsible keyboard and the main body to generate a first signal when the keyboard is folded. A keyboard controller is integrated into the main body to receive the first signal. An interrupt request controller in the main body is coupled to the keyboard controller to send a first interrupt request when in the folded position.
    Type: Grant
    Filed: March 12, 2003
    Date of Patent: May 30, 2006
    Assignee: Mitac Technology Corp.
    Inventor: Chin Hsiang Chen
  • Publication number: 20040114360
    Abstract: A rear pushbutton type switch arrangement for flashlight formed of an aluminum alloy barrel holding a battery set and a lamp assembly, an electrically conducting rotary rear cap provided at a rear side of said barrel and a switch structure is disclosed. The switch structure has an externally threaded, electrically conducting, hollow, cylindrical metal casing connected between the barrel and the rotary cap to hold the other parts of the switch structure firmly in the rotary rear cap so that the other parts of the switch structure do not fall from the rotary rear cap when disconnected from the barrel for a replacement of the battery set.
    Type: Application
    Filed: December 11, 2002
    Publication date: June 17, 2004
    Inventor: Chin Hsiang Chen
  • Patent number: 6742911
    Abstract: A rear pushbutton type switch arrangement for flashlight formed of an aluminum alloy barrel holding a battery set and a lamp assembly, an electrically conducting rotary rear cap provided at a rear side of said barrel and a switch structure is disclosed. The switch structure has an externally threaded, electrically conducting, hollow, cylindrical metal casing connected between the barrel and the rotary cap to hold the other parts of the switch structure firmly in the rotary rear cap so that the other parts of the switch structure do not fall from the rotary rear cap when disconnected from the barrel for a replacement of the battery set.
    Type: Grant
    Filed: December 11, 2002
    Date of Patent: June 1, 2004
    Inventor: Chin Hsiang Chen
  • Publication number: 20040093449
    Abstract: A computer system with collapsible keyboard and alternate display functions. The computer system includes a main body which stores at least one application. A monitor and collapsible keyboard are coupled to the main body, the keyboard disposable in an open operating position and a folded position. A signal generating device is coupled to both the collapsible keyboard and the main body to generate a first signal when the keyboard is folded. A keyboard controller is integrated into the main body to receive the first signal. An interrupt request controller in the main body is coupled to the keyboard controller to send a first interrupt request when in the folded position.
    Type: Application
    Filed: March 12, 2003
    Publication date: May 13, 2004
    Applicant: Mitac Technology Corp.
    Inventor: Chin Hsiang Chen
  • Patent number: 6616297
    Abstract: A pushbutton and rear cap mounting arrangement for flashlight is so arranged that the pushbutton is alternatively set between a first position where the pushbutton is locked in “on”position to close the circuit of the flashlight, and a second position where the pushbutton is unlocked and supported in “off” position to open the circuit and the user can push the pushbutton with the thumb to “on” position to turn on the flashlight when desired.
    Type: Grant
    Filed: September 9, 2002
    Date of Patent: September 9, 2003
    Inventor: Chin Hsiang Chen
  • Publication number: 20030087735
    Abstract: A pull cord exerciser including a main body and a cord reel pivotally disposed in the main body. A pull cord is wound on the cord reel. The cord reel is equipped with a restoring member for driving the cord reel to wind the pull cord which is pulled out. A frictional member is coaxially fitted with the cord reel. A one-way bearing is connected between the frictional member and the cord reel. When pulling the pull cord, the cord reel drives the cord reel to rotate. During the pulling travel, by means of the one-way bearing, the frictional member is one-way driven to create a frictional resistance between a frictional face of the frictional member and the main body so as to achieve an exercising effect.
    Type: Application
    Filed: November 5, 2001
    Publication date: May 8, 2003
    Inventor: Chin Hsiang Chen
  • Patent number: D490867
    Type: Grant
    Filed: July 24, 2003
    Date of Patent: June 1, 2004
    Inventor: Chin Hsiang Chen