Abstract: A method of fabricating a contact hole and a fuse hole includes providing a dielectric layer. A conductive pad and a fuse are disposed within the dielectric layer. Then, a first mask is formed to cover the dielectric layer. Later, a first removing process is performed by taking the first mask as a mask to remove part the dielectric layer to form a first trench. The conductive pad is disposed directly under the first trench and does not expose through the first trench. Subsequently, the first mask is removed. After that, a second mask is formed to cover the dielectric layer. Then, a second removing process is performed to remove the dielectric layer directly under the first trench to form a contact hole and to remove the dielectric layer directly above the fuse by taking the second mask as a mask to form a fuse hole.

Abstract: A method of fabricating a contact hole and a fuse hole includes providing a dielectric layer. A conductive pad and a fuse are disposed within the dielectric layer. Then, a first mask is formed to cover the dielectric layer. Later, a first removing process is performed by taking the first mask as a mask to remove part the dielectric layer to form a first trench. The conductive pad is disposed directly under the first trench and does not expose through the first trench. Subsequently, the first mask is removed. After that, a second mask is formed to cover the dielectric layer. Then, a second removing process is performed to remove the dielectric layer directly under the first trench to form a contact hole and to remove the dielectric layer directly above the fuse by taking the second mask as a mask to form a fuse hole.

Abstract: A method of fabricating a contact hole and a fuse hole includes providing a dielectric layer. A conductive pad and a fuse are disposed within the dielectric layer. Then, a first mask is formed to cover the dielectric layer. Later, a first removing process is performed by taking the first mask as a mask to remove part the dielectric layer to form a first trench. The conductive pad is disposed directly under the first trench and does not expose through the first trench. Subsequently, the first mask is removed. After that, a second mask is formed to cover the dielectric layer. Then, a second removing process is performed to remove the dielectric layer directly under the first trench to form a contact hole and to remove the dielectric layer directly above the fuse by taking the second mask as a mask to form a fuse hole.

Abstract: A method of fabricating an isolation structure is provided. A first oxide layer and a first, second, and third hard mask layers are formed on a substrate. A patterned third hard mask layer is formed. Second oxide layers are formed on sidewalls of the patterned third hard mask layer and a fourth hard mask layer is formed between the second oxide layers. The second oxide layers and the second hard mask layer are removed using the patterned third hard mask layer and the fourth hard mask layer as a mask, to form a patterned second hard mask layer. The patterned third hard mask layer and the fourth hard mask layer are removed. A portion of the patterned second hard mask layer is removed to form trench patterns. A patterned first hard mask layer and first oxide layer, and trenches located in the substrate are defined. An isolation material is formed.

Abstract: A method of fabricating a contact hole and a fuse hole includes providing a dielectric layer. A conductive pad and a fuse are disposed within the dielectric layer. Then, a first mask is formed to cover the dielectric layer. Later, a first removing process is performed by taking the first mask as a mask to remove part the dielectric layer to form a first trench. The conductive pad is disposed directly under the first trench and does not expose through the first trench. Subsequently, the first mask is removed. After that, a second mask is formed to cover the dielectric layer. Then, a second removing process is performed to remove the dielectric layer directly under the first trench to form a contact hole and to remove the dielectric layer directly above the fuse by taking the second mask as a mask to form a fuse hole.

Abstract: A method of fabricating an isolation structure is provided. A first oxide layer and a first, second, and third hard mask layers are formed on a substrate. A patterned third hard mask layer is formed. Second oxide layers are formed on sidewalls of the patterned third hard mask layer and a fourth hard mask layer is formed between the second oxide layers. The second oxide layers and the second hard mask layer are removed using the patterned third hard mask layer and the fourth hard mask layer as a mask, to form a patterned second hard mask layer. The patterned third hard mask layer and the fourth hard mask layer are removed. A portion of the patterned second hard mask layer is removed to form trench patterns. A patterned first hard mask layer and first oxide layer, and trenches located in the substrate are defined. An isolation material is formed.