Abstract: The disclosure is related to a scalable manufacturing system and a method for implementing the same. The scalable manufacturing system incorporates one or more standardized solid manufacture units to form a manufacture module. To replace at least one site of the traditional production line, the manufacture module performs a specific function over a production line. Multiple manufacture modules are assembled by means of stacking vertically and in a left-to-right arrangement, so as to form a manufacture frame. The manufacture frame is utilized to perform a specific production process. Multiple manufacture frames form a manufacture unit for performing a more complex process. Therefore a 3D production line is established. A transportation means is also introduced in between the manufacture cells. A high-performance scalable manufacturing system is achieved efficiently using space.

Abstract: Systems and methods for temperature control of semiconductor wafers are provided. An exemplary embodiment of semiconductor wafer is held by an electrostatic chuck. An exemplary embodiment of system includes a cooling apparatus connecting the electrostatic chuck. The cooling apparatus comprises an inlet, an outlet, a porous flow layer, a porous contact layer contacting the electrostatic chuck, and a porous heat exchange layer disposed between the flow layer and the contact layer. The inlet communicates with the flow layer, and the outlet communicates with the contact layer. The fluid medium is introduced into the flow layer from the inlet and sequentially flows through the heat exchange layer and the contact layer. The fluid medium is discharged from the contact layer through the outlet, thereby exchanging heat from the semiconductor wafer.

Abstract: A DMHC (dual mode hybrid control) system and method which facilitates enhanced control in the delivery of polishing slurry to a CMP (chemical mechanical polishing) apparatus. The DMHC comprises a linear table and a PID (proportional integrated differential) controller operably connected to a slurry pump provided in a slurry flow conduit which delivers the polishing slurry to the CMP apparatus. A bubble trap and a flowmeter provided in the slurry flow conduit downstream of the slurry pump are operably connected to the PID controller, and the CMP apparatus is located downstream of the flowmeter.

Abstract: An automatic sensing wafer blade for picking up wafers that is equipped with a sensor capable of self-diagnosing potential failure conditions of the blade and a method for using the wafer blade are described. The automatic sensing wafer blade is equipped with a V-shaped seal ring on a top surface, and a sensor of either a limit switch or a capacitance sensor for sensing the presence or absence of a wafer on top of the wafer blade. The automatic sensing wafer blade is further capable of self-diagnosing any potential failure conditions of the function of the wafer blade due to contaminating particles, or contaminating liquid on the wafer surface, or due to an aged or malfunctioning seal ring on top of the wafer blade.

Abstract: A system for controlling and monitoring a rate of flow of a fluid, such as a CMP slurry, comprising a pump for pumping the slurry; a flow meter for monitoring the rate of flow of the slurry; and a controller operably connected to the flow meter and the pump. The controller receives signals from the flow meter indicating the rate of flow of the slurry and controls the operational speed of the pump responsive to the flow meter signals. A degasser equipped with a level sensor may be further provided in the system for removing gas bubbles from the slurry.

Abstract: A system and method which is capable of compensating for unintended elevations in process temperatures induced in a substrate during a semiconductor fabrication process in order to reduce or eliminate disparities in critical dimensions of device features. The system may be a plasma etching system comprising a process chamber containing an electrostatic chuck (ESC) for supporting a wafer substrate. A chiller outside the process chamber includes a main coolant chamber, which contains a main coolant fluid, as well as an compensation coolant chamber, which contains an compensation coolant fluid. A main circulation loop normally circulates the main coolant fluid from the main coolant chamber through the electrostatic chuck to maintain the chuck at a desired set point temperature.

Abstract: A new and improved, multi-phase pressure control valve for facilitating quick and accurate attainment and stabilization of gas pressure inside a semiconductor fabrication process chamber such as an etch chamber or CVD chamber. In one embodiment, the multi-phase pressure control valve is a butterfly-type valve which includes outer and inner vanes that independently control flow of gases from a process chamber to a vacuum pump. The larger-diameter outer vane stabilizes gas pressures within a large range, whereas the inner vane stabilizes pressure within a smaller range. In another embodiment, the multi-phase pressure control valve is a gate-type valve which may include a pivoting outer vane and an inner vane slidably disposed with respect to the outer vane for exposing a central gas flow opening in the outer vane.

Abstract: A new and improved, multi-phase pressure control valve for facilitating quick and accurate attainment and stabilization of gas pressure inside a semiconductor fabrication process chamber such as an etch chamber or CVD chamber. In one embodiment, the multi-phase pressure control valve is a butterfly-type valve which includes outer and inner vanes that independently control flow of gases from a process chamber to a vacuum pump. The larger-diameter outer vane stabilizes gas pressures within a large range, whereas the inner vane stabilizes pressure within a smaller range. In another embodiment, the multi-phase pressure control valve is a gate-type valve which may include a pivoting outer vane and an inner vane slidably disposed with respect to the outer vane for exposing a central gas flow opening in the outer vane.

Abstract: A polishing assembly for use in a linear chemical mechanical polishing apparatus and a method for forming such assembly are described. In the polishing assembly, a plurality of polishing pads are adhesively joined to a top surface of a continuous belt. Each of the plurality of polishing pads is provided with a leading edge which has a lower lip and a trailing edge which has an upper lip. The upper lip of the trailing edge of a first polishing pad covers the lower lip of the leading edge of a second polishing pad when the pads are adhesively bonded to the continuous belt such that the first pad leads the second pad in the direction of rotation for the continuous belt such that the upper lip protects the lower lip to prevent delamination of the pads. The tight seam made possible by the present invention novel tapered joint further prevents water absorption or penetration and therefore prolongs the lifetime of the polishing pads.

Abstract: A system for controlling and monitoring a rate of flow of a fluid, such as a CMP slurry, comprising a pump for pumping the slurry; a flow meter for monitoring the rate of flow of the slurry; and a controller operably connected to the flow meter and the pump. The controller receives signals from the flow meter indicating the rate of flow of the slurry and controls the operational speed of the pump responsive to the flow meter signals. A degasser equipped with a level sensor may be further provided in the system for removing gas bubbles from the slurry.

Abstract: A DMHC (dual mode hybrid control) system and method which facilitates enhanced control in the delivery of polishing slurry to a CMP (chemical mechanical polishing) apparatus. The DMHC comprises a linear table and a PID (proportional integrated differential) controller operably connected to a slurry pump provided in a slurry flow conduit which delivers the polishing slurry to the CMP apparatus. A bubble trap and a flowmeter provided in the slurry flow conduit downstream of the slurry pump are operably connected to the PID controller, and the CMP apparatus is located downstream of the flowmeter.

Abstract: An automatic sensing wafer blade for picking up wafers that is equipped with a sensor capable of self-diagnosing potential failure conditions of the blade and a method for using the wafer blade are described. The automatic sensing wafer blade is equipped with a V-shaped seal ring on a top surface, and a sensor of either a limit switch or a capacitance sensor for sensing the presence or absence of a wafer on top of the wafer blade. The automatic sensing wafer blade is further capable of self-diagnosing any potential failure conditions of the function of the wafer blade due to contaminating particles, or contaminating liquid on the wafer surface, or due to an aged or malfunctioning seal ring on top of the wafer blade.