Abstract: A semiconductor device includes a substrate, first and second source/drain features, and a dielectric plug. The substrate has a semiconductor fin. The first and second source/drain features are over first and second portions of the semiconductor fin, respectively. The dielectric plug is at least partially embedded in a third portion of the semiconductor fin. The third portion is in between the first and second portions of the semiconductor fin. The dielectric plug includes a first dielectric material and a second dielectric material different from the first dielectric material.

Abstract: A fan structure includes a fan frame and a fan body. The fan frame includes two side plates, a first connecting plate, a buckling portion and a second connecting plate. The side plate includes a fan stopping plate, a first protruding portion and two second protruding portions. The first protruding portion and the second protruding portions are disposed on the fan stopping plate. The first connecting plate is connected with the fan stopping plates. The buckling portion is disposed on the first connecting plate. The second connecting plate connects with the fan stopping plates and the first connecting plate. The fan body is accommodated between the side plates. The fan body has some first and second recessed portions which accommodate the first protruding portions and the second protruding portions respectively. The side plates, the first connecting plate and the second connecting plate are integrally formed.

Abstract: An antenna structure including a first radiator and a second radiator is provided. The first radiator includes a first section, a second section, and a third section. The first section has a feed-in end. The second section is adjacent to the first section and connected to a position of the first section close to the feed-in end. The third section is connected to the second section and the feed-in end to encircle a space. The second radiator is disposed around the first section and the second section. The second radiator includes a first end and a second end opposite to each other. The first end is a ground end. A coupling interval is formed between the second end and the third section. A first frequency band, a second frequency band, and a third frequency band are resonated by the first radiator and the second radiator.

Abstract: A vehicle seat safety system. The vehicle safety seat system comprises a vehicle seat configured to move between a substantially reclining position and a substantially sitting position. The vehicle seat comprises at least a seat back and a seat bottom. The system also includes an enclosure configured to store a blanket airbag in an undeployed position prior to a collision, wherein the enclosure is disposed near the head of a passenger in the vehicle seat, and wherein the blanket airbag is ejected from the enclosure to an intermediate position in the event of a collision. The system further comprises a first electromechanical restraint system associated with the seat back and coupled to the blanket airbag by a first physical coupling and a second electromechanical restraint system associated with the seat bottom and coupled to the blanket airbag by a second physical coupling.

Abstract: A structure includes a fin on a substrate; first and second gate stacks over the fin and including first and second gate dielectric layers and first and second gate electrodes respectively; and a dielectric gate over the fin and between the first and second gate stacks. The dielectric gate includes a dielectric material layer on a third gate dielectric layer. In a cross-sectional view cut along a direction parallel to a lengthwise direction of the fin and offset from the fin, the first gate dielectric layer forms a first U shape, the third gate dielectric layer forms a second U shape, a portion of the first gate electrode is disposed within the first U shape, a portion of the dielectric material layer is disposed within the second U shape, and a portion of an interlayer dielectric layer is disposed laterally between the first and the second U shapes.

Abstract: An electric heating cloth having gaps and a connection structure thereof are disclosed. The electric heating cloth having gaps comprises plural conductive yarns arranged in a first direction and plural textile yarns and plural metal conductive wires arranged in a second direction for interweaving with the plural conductive yarns. The plural metal conductive wires are aligned at external sides of the plural textile yarns to form a first conductive side and a second conductive side respectively, and each of the first conductive side and the second conductive side has plural gaps.

Abstract: Provided is an electronic device including a multi-input multi-output antenna structure configured on a substrate, and the multi-input multi-output antenna structure includes two dipole antennas and two second grounded radiators. Each dipole antenna is used for resonating a first frequency band and a second frequency band. Each dipole antenna includes a feed-in radiator and a first grounded radiator. The feed-in radiator has a feed-in end. The first grounded radiator is disposed beside the feed-in radiator and has a first grounded end. The two second grounded radiators are positioned between the two dipole antennas, the two second grounded radiators are separated from the two first grounded radiators and are respectively corresponding to the two first grounded radiators, and a bent gap is formed between the two second grounded radiators.

Abstract: A dual-band circularly polarized antenna structure includes a microstrip line, an antenna unit and a ground. The antenna unit includes a first radiator and a second radiator. The first radiator has a feed-in portion and a first spiral pattern. The first spiral pattern spirals outwardly from a starting point close to the feed-in portion. The second radiator has a first grounding portion and a second spiral pattern. The second spiral pattern spirals outwardly from a starting point close to the first grounding portion in a manner non-overlapping with the first spiral pattern. One of the first and the second radiators has a second grounding portion. The microstrip line and the antenna unit are arranged apart. The feed-in portion of the first radiator of the antenna unit is coupled to the microstrip line. The first and the second grounding portions are coupled to the ground.

Abstract: An antenna structure includes a ground plane and at least one series-fed antenna. Each series-fed antenna includes a first patch, a plurality of second patches, a first microstrip line, a first grounding structure group, a plurality of second microstrip lines, and a plurality of second grounding structure groups. The first patch is disposed beside the ground plane. The first patch and the second patch are arranged along a straight line. The first microstrip line extends from the first patch and has a feeding point. The first grounding structure group includes two first grounding traces that extend symmetrically from both sides of the first microstrip line to the ground plane. The second microstrip lines are respectively connected between the first patch and the second patches. The second grounding structure groups are respectively disposed on both sides of the second microstrip lines, and are coupled to the ground plane.

Abstract: An inflatable blanket for a vehicle includes a first blanket layer, a second blanket layer coupled to the first blanket layer, and an airbag disposed between the first blanket layer and the second blanket layer. The airbag has a deflated configuration and an inflated configuration to protect a vehicle occupant when the vehicle is subjected to an external force.

Abstract: A semiconductor structure includes a fin active region extruded from a semiconductor substrate; and a gate stack disposed on the fin active region. The gate stack includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer. The gate dielectric layer includes a first dielectric material. The semiconductor structure further includes a dielectric gate of a second dielectric material disposed on the fin active region. The gate dielectric layer extends from a sidewall of the gate electrode to a sidewall of the dielectric gate. The second dielectric material is different from the first dielectric material in composition.

Abstract: Provided is a multi-input multi-output antenna structure configured on a substrate, and the multi-input multi-output antenna structure includes two dipole antennas and two second grounded radiators. Each dipole antenna is used for resonating a first frequency band and a second frequency band. Each dipole antenna includes a feed-in radiator and a first grounded radiator. The feed-in radiator has a feed-in end. The first grounded radiator is disposed beside the feed-in radiator and has a first grounded end. The two second grounded radiators are positioned between the two dipole antennas, the two second grounded radiators are separated from the two first grounded radiators and are respectively corresponding to the two first grounded radiators, and a bent gap is formed between the two second grounded radiators.

Abstract: An antenna module includes a metal frame and an antenna structure. The metal frame includes an opening and a first edge and a second edge located at two opposite sides of the opening. The antenna structure is disposed at the opening and includes a first radiator, a second radiator, a first conductor, and a second conductor. The first radiator includes first and second sections. The first section is near the first edge and includes a feeding end, and the second section extends from the first section to the second edge. The second radiator is located between the first section and the first edge and includes a ground end. A first slit is formed between the second radiator and the first section. The first conductor is connected between the second radiator and the metal frame. The second conductor is connected between the second radiator and the metal frame.

Abstract: A fan module includes a chassis and a plurality of fan structures. The chassis includes an outer casing and a plurality of isolation plates. The isolation plates are disposed inside the outer casing. The isolation plates isolate a plurality of first accommodation spaces inside the outer casing. Each of the isolation plates has a first outline and a first buckling portion. The fan structures are detachably accommodated inside the first accommodation spaces respectively. Each of the fan structures has a second outline and a second buckling portion. When one of the fan structures is accommodated inside the corresponding first accommodation space, the corresponding first buckling portion and the corresponding second buckling portion are buckled to each other in order to fix the relative position of the corresponding fan structure and the chassis. The first outline and the second outline match with each other.

Abstract: A fan structure includes a fan frame and a fan body. The fan frame includes two side plates, a first connecting plate, a buckling portion and a second connecting plate. The side plate includes a fan stopping plate, a first protruding portion and two second protruding portions. The first protruding portion and the second protruding portions are disposed on the fan stopping plate. The first connecting plate is connected with the fan stopping plates. The buckling portion is disposed on the first connecting plate. The second connecting plate connects with the fan stopping plates and the first connecting plate. The fan body is accommodated between the side plates. The fan body has some first and second recessed portions which accommodate the first protruding portions and the second protruding portions respectively. The side plates, the first connecting plate and the second connecting plate are integrally formed.

Abstract: A semiconductor structure includes a fin active region extruded from a semiconductor substrate; and a gate stack disposed on the fin active region. The gate stack includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer. The gate dielectric layer includes a first dielectric material. The semiconductor structure further includes a dielectric gate of a second dielectric material disposed on the fin active region. The gate dielectric layer extends from a sidewall of the gate electrode to a sidewall of the dielectric gate. The second dielectric material is different from the first dielectric material in composition.

Abstract: A mobile vehicle is disclosed herein. It comprises a car body having four wheels and a chassis bracket at a bottom thereof, and at least one drive motor disposed on a front side or a rear side or both of the chassis bracket and each of which has a motor body and a rotational shaft passing through a center of the motor body for driving the four wheels to rotate through a driver assembly.

Abstract: An antenna structure including a first radiator and a second radiator is provided. The first radiator includes a first section, a second section, and a third section. The first section has a feed-in end. The second section is adjacent to the first section and connected to a position of the first section close to the feed-in end. The third section is connected to the second section and the feed-in end to encircle a space. The second radiator is disposed around the first section and the second section. The second radiator includes a first end and a second end opposite to each other. The first end is a ground end. A coupling interval is formed between the second end and the third section. A first frequency band, a second frequency band, and a third frequency band are resonated by the first radiator and the second radiator.

Abstract: The disclosure provides an electronic device including a carrier, a first antenna, a second antenna, a third antenna, and a shielding structure. The carrier includes a first side and a second side opposite to each other, and a third side and a fourth side opposite to each other. The first antenna is disposed at the first side of the carrier. The second antenna and the third antenna are disposed at the second side of the carrier. The first, second, and third antennas are used for transmitting and receiving wireless signals at first, second, and third frequency bands, respectively. The shielding structure is disposed between the first antenna and the second antenna, and between the first antenna and the third antenna, so that the shielding structure shields interference signals between the first antenna and the second antenna, and interference signals between the first antenna and the third antenna.