Abstract: An n-type metal oxide semiconductor transistor includes a gate structure, two source/drain regions, two amorphous portions and a silicide. The gate structure is disposed on a substrate. The two source/drain regions are disposed in the substrate and respectively located at two sides of the gate structure, wherein at least one of the source/drain regions is formed with a dislocation. The two amorphous portions are respectively disposed in the two source/drain regions. The silicide is disposed on the two source/drain regions, wherein at least one portion of the silicide overlaps the two amorphous portions.

Abstract: A memory card and a non-volatile memory controller thereof are provided. The non-volatile memory controller includes a firmware download port group, a memory interface unit, a processing unit, and a host interface unit. The firmware download port group is used for coupled to a firmware update fixture. The memory interface unit includes at least one tri-state buffer component, and the memory interface unit is coupled to a non-volatile memory and the firmware download port group through the tri-state buffer component, wherein the tri-state buffer component determines whether to operate in a high-impedance mode or a normal mode according to a mode single. The processing unit accesses the non-volatile memory through the memory interface unit. When the tri-state buffer component operates in the high-impedance mode according to the mode single, the firmware update fixture writes a new firmware into the non-volatile memory through the firmware download port group.

Abstract: A memory card and a non-volatile memory controller thereof are provided. The non-volatile memory controller provides a process interface to allow a host to access a non-volatile memory. The non-volatile memory controller includes a mode setting port group, a firmware download port group, a host access port group, a memory port group, a control unit, a processing unit, an interface unit, and a switch unit. When a firmware in the non-volatile memory is to be updated, the switch unit switches to the firmware download port group and then connects it to a fixture to obtain a new firmware. The control unit writes the new firmware into the non-volatile memory directly on a printed circuit board according to an instruction of the process unit. Thereby, in the present invention, firmware updating can be carried out directly on a printed circuit board therefore is made more convenient.

Abstract: A memory card and a non-volatile memory controller thereof are provided. The non-volatile memory controller includes a firmware download port group, a memory interface unit, a processing unit, and a host interface unit. The firmware download port group is used for coupled to a firmware update fixture. The memory interface unit includes at least one tri-state buffer component, and the memory interface unit is coupled to a non-volatile memory and the firmware download port group through the tri-state buffer component, wherein the tri-state buffer component determines whether to operate in a high-impedance mode or a normal mode according to a mode single. The processing unit accesses the non-volatile memory through the memory interface unit. When the tri-state buffer component operates in the high-impedance mode according to the mode single, the firmware update fixture writes a new firmware into the non-volatile memory through the firmware download port group.

Abstract: The present invention discloses an envelope detection circuit by using a peel cone approximation concept. The envelope detection circuit comprises an absolute value comparision mechanism, a read only memory and a multiplier/adder mechanism. Particularly, the present invention uses a divider to generate an address of the read only memory to obtain less error and less hardware cost.

Abstract: The present invention discloses an apparatus and method for implementing an inverse arctangent function using piecewise linear theorem to simplify and used to transform a right-angled coordinate point X and Y to a phase angle &thgr; of an inverse arctangent function. The present invention uses T-line combination to approach an inverse arctangent function between 0 degree to 45 degree, and determines which piecewise linear region the right-angled coordinate point is located at. A coefficient table stored in a memory is used to compute {circumflex over (&thgr;)} which is the approximate value of the phase angle &thgr;. The phase angle {circumflex over (&thgr;)} between 45 degree to 360 degree can be mapped to the approximate phase angle {circumflex over (&thgr;)} between 0 degree to 45 degree using linear combination.