Abstract: An ultrasonic transducer detector having a high operating frequency is provided. The ultrasonic transducer detector comprises a substrate and an ultrasonic transducer array. The substrate has a plurality of openings, and the ultrasonic transducer array is disposed on the substrate. The ultrasonic transducer array has a plurality of resonance units, and the thickness of each resonance unit is equivalent to ½ wavelength of the operating frequency of the ultrasonic transducer. Each resonance unit comprises an oscillating element and a piezoelectric element. The oscillating element has a first surface adjacent to the substrate, and the piezoelectric element is disposed on the first surface and located in the corresponding opening.

Abstract: In a method for switching a work mode of an electronic device, if the electronic device receives a trigger signal when the electronic device is starting up, the electronic device enters the diagnostic mode. Otherwise, if the electronic device does not receive the trigger signal when the electronic device is starting up, the electronic device enters a production mode. When the electronic device receives the trigger signal in the production mode, operation parameters of the electronic device are stored into a storage system, and the electronic device switches from the production mode to the diagnostic mode. When the electronic device receives an exit command in the diagnostic mode, the electronic device switches from the diagnostic mode to the production mode.

Abstract: A capacitive transducer and manufacturing method thereof is provided. A multifunction device including a plurality of the capacitive transducers is also provided, where the capacitive transducers are disposed on a substrate and include at least one microphone and at least one pressure sensor or ultrasonic device.

Abstract: A microelectromechanical filter is provided. The microelectromechanical filter includes an input electrode, an output electrode, one or several piezoelectric resonators, one or several high quality factor resonators, and one or several coupling beams. The input electrode and the output electrode are disposed on the piezoelectric resonators. The high quality factor resonator is silicon or of piezoelectric materials, and there is no metal electrode on top of the resonator. The coupling beam is connected between the piezoelectric resonator and the high quality factor resonator. The coupling beam transmits an acoustic wave among the resonators, and controls a bandwidth of filter. The microelectromechanical filter with low impedance and high quality factor fits the demand for next-generation communication systems.

Abstract: An inter-digital bulk acoustic resonator including a resonating structure, one or more input electrodes, one or more output electrodes, a substrate, and a supporting structure disposed on the substrate is provided. The resonating structure includes one or more resonating beams and a coupling beam. The resonating beams are connected at opposite two sides of the coupling beam respectively. The input electrodes and the output electrodes are arranged among the resonating beams in interlace. The input electrodes, the output electrodes, and the resonating beams are parallel to each other. Two ends of the coupling beam are connected to the supporting structure, such that the resonating structure is supported on the substrate.

Abstract: A resonator includes a resonating body and at least one periodic structure having one end connected to the resonating body. The periodic structure includes at least two basic structure units with duplicated configuration. The periodic structure blocks wave propagation caused by the vibration of the resonating body. The resonating body has a resonance frequency f0. The periodic structure has a band gap characteristic or a deaf band characteristic within a particular frequency range, and the resonance frequency f0 falls within the particular frequency range of the periodic structure.

Abstract: A resonator, an elastic wave transmission element and a method for fabricating the transmission element are provided. The elastic wave transmission element has a first side and a second side. The elastic wave transmission element includes a plurality of structures sequentially arranged along a direction from the first side toward the second side. Each of the structures has a different defect which is different to each other. The impedance of the structures decreases gradually along the direction. As such, the elastic wave transmission element has an impedance match function.

Abstract: A truss structure is provided. The truss structure comprises a substrate; and plural sub-truss groups disposed on the substrate, wherein each sub-truss group comprises plural VIAs; and plural metal layers interlaced with the plural VIAs, wherein the plural sub-truss groups are piled up on each other to form a 3-D corrugate structure.

Abstract: An ultrasonic transducer detector having a high operating frequency is provided. The ultrasonic transducer detector comprises a substrate and an ultrasonic transducer array. The substrate has a plurality of openings, and the ultrasonic transducer array is disposed on the substrate. The ultrasonic transducer array has a plurality of resonance units, and the thickness of each resonance unit is equivalent to ½ wavelength of the operating frequency of the ultrasonic transducer. Each resonance unit comprises an oscillating element and a piezoelectric element. The oscillating element has a first surface adjacent to the substrate, and the piezoelectric element is disposed on the first surface and located in the corresponding opening.

Abstract: A microelectromechanical filter is provided. The microelectromechanical filter includes an input electrode, an output electrode, one or several piezoelectric resonators, one or several high quality factor resonators, and one or several coupling beams. The input electrode and the output electrode are disposed on the piezoelectric resonators. The high quality factor resonator is silicon or of piezoelectric materials, and there is no metal electrode on top of the resonator. The coupling beam is connected between the piezoelectric resonator and the high quality factor resonator. The coupling beam transmits an acoustic wave among the resonators, and controls a bandwidth of filter. The microelectromechanical filter with low impedance and high quality factor fits the demand for next-generation communication systems.

Abstract: A multi-actuation MEMS switch for high frequency signals includes a substrate, a heater disposed on the substrate, a co-planar waveguide disposed on a lowest metal layer, and a movable membrane including at least two metal layers, and an dielectric layer disposed between the co-planar waveguide and the movable membrane. The movable membrane is a fixed-fixed beam structure with a center indentation. When heat is generated and conducted to the movable membrane or electrostatic force is generated between the movable membrane and the co-planar waveguide or both forces are generated, the movable membrane will bend toward the co-planar waveguide. The position of the movable membrane change capacitance on signal line for switching the RF signal.

Abstract: A resonator, an elastic wave transmission element and a method for fabricating the transmission element are provided. The elastic wave transmission element has a first side and a second side. The elastic wave transmission element includes a plurality of structures sequentially arranged along a direction from the first side toward the second side. Each of the structures has a different defect which is different to each other. The impedance of the structures decreases gradually along the direction. As such, the elastic wave transmission element has an impedance match function.

Abstract: A resonator includes a resonating body and at least one periodic structure having one end connected to the resonating body. The periodic structure includes at least two basic structure units with duplicated configuration. The periodic structure blocks wave propagation caused by the vibration of the resonating body. The resonating body has a resonance frequency f0. The periodic structure has a band gap characteristic or a deaf band characteristic within a particular frequency range, and the resonance frequency f0 falls within the particular frequency range of the periodic structure.

Abstract: A stacked package structure utilizes flip-chip technology to stack an acoustic micro-sensor on an integrated circuit (IC) device having a recess as a back chamber and cover the acoustic micro-sensor using a glass substrate or a planar substrate with an aperture. With the use of the stacked package structure, the package volume of the acoustic micro-sensor can be reduced effectively.

Abstract: A truss structure is provided. The truss structure comprises a substrate; and plural sub-truss groups disposed on the substrate, wherein each sub-truss group comprises plural VIAs; and plural metal layers interlaced with the plural VIAs, wherein the plural sub-truss groups are piled up on each other to form a 3-D corrugate structure.

Abstract: A multi-actuation MEMS switch for high frequency signals includes a substrate, a heater disposed on the substrate, a co-planar waveguide disposed on a lowest metal layer, and a movable membrane including at least two metal layers, and an dielectric layer disposed between the co-planar waveguide and the movable membrane. The movable membrane is a fixed-fixed beam structure with a center indentation. When heat is generated and conducted to the movable membrane or electrostatic force is generated between the movable membrane and the co-planar waveguide or both forces are generated, the movable membrane will bend toward the co-planar waveguide. The position of the movable membrane change capacitance on signal line for switching the RF signal.

Abstract: A stacked package structure utilizes flip-chip technology to stack an acoustic micro-sensor on an integrated circuit (IC) device having a recess as a back chamber and cover the acoustic micro-sensor using a glass substrate or a planar substrate with an aperture. With the use of the stacked package structure, the package volume of the acoustic micro-sensor can be reduced effectively.

Abstract: A semiconductor memory device includes a memory cell array, data buffer, and column switch. The data buffer senses the potential of a bit line to determine data in a selected memory cell and hold readout data in a read. The data buffer detects both whether the whole data buffer holds “0” data and whether the whole data buffer holds “1” data. The column switch selects part of the data buffer and connects the part to a bus.

Abstract: A semiconductor memory device includes a memory cell array, data buffer, and column switch. The data buffer senses the potential of a bit line to determine data in a selected memory cell and hold readout data in a read. The data buffer detects both whether the whole data buffer holds “0” data and whether the whole data buffer holds “1” data. The column switch selects part of the data buffer and connects the part to a bus.