Patents by Inventor Chin-Hwa Hsieh

Chin-Hwa Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6884736
    Abstract: A method of manufacturing a semiconductor device is provided. A semiconductor element is formed on a substrate. The semiconductor element has at least one nickel silicide contact region, an etch stop layer formed over said element, and an insulating layer formed over said etch stop layer. A portion of the etch stop layer immediately over a selected contact region is removed using a process that does not substantially react with the contact region, to form a contact opening. The contact opening is then filled with a conductive material to form a contact.
    Type: Grant
    Filed: October 7, 2002
    Date of Patent: April 26, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co, Ltd.
    Inventors: Chii-Ming Wu, Mei-Yun Wang, Chih-Wei Chang, Chin-Hwa Hsieh, Shau-Lin Shue, Chu-Yun Fu, Ju-Wang Hsu, Ming-Huan Tsai, Yuan-Hung Chiu
  • Publication number: 20040067635
    Abstract: A method of manufacturing a semiconductor device is provided. A semiconductor element is formed on a substrate. The semiconductor element has at least one nickel silicide contact region, an etch stop layer formed over said element, and an insulating layer formed over said etch stop layer. A portion of the etch stop layer immediately over a selected contact region is removed using a process that does not substantially react with the contact region, to form a contact opening. The contact opening is then filled with a conductive material to form a contact.
    Type: Application
    Filed: October 7, 2002
    Publication date: April 8, 2004
    Inventors: Chii-Ming Wu, Mei-Yun Wang, Chih-Wei Chang, Chin-Hwa Hsieh, Shau-Lin Shue, Chu-Yun Fu, Ju-Wang Hsu, Ming-Huan Tsai, Yuan-Hung Chiu