Abstract: A pressure relief apparatus with brain entrainment includes a resonant wave generating module and a bio-signal measuring unit. The resonant wave generating module includes multiple resonant devices, divided into multiple regions. Each of the resonant regions can respectively generate a resonant wave being changeable or turned off. The bio-signal measuring unit at least measures an energy of autonomic sympathetic nerve system LH and an energy of autonomic parasympathetic nerve system HF. According to a current one of a set of present conditions, a set of feedback control signals is output to the resonant wave generating module to modulate the resonant devices.

Abstract: A pressure relief apparatus with brain entrainment includes a resonant wave generating module and a bio-signal measuring unit. The resonant wave generating module includes multiple resonant devices, divided into multiple regions. Each of the resonant regions can respectively generate a resonant wave being changeable or turned off. The bio-signal measuring unit at least measures an energy of autonomic sympathetic nerve system LH and an energy of autonomic parasympathetic nerve system HF. According to a current one of a set of present conditions, a set of feedback control signals is output to the resonant wave generating module to modulate the resonant devices.

Abstract: The present invention relates to a photoelectrical feedback sensing system. A first light signal passes through the sensing apparatus. A second light signal corresponding to a characteristic of a sample within the sensing apparatus is outputted from the sensing apparatus. The first photo detector receives the first light signal and outputs a first electric signal corresponding to the intensity of the first light signal. The second photo detector outputs a second electric signal corresponding to the intensity of the second light signal. A driving signal is generated by the micro-processor to drive the light-emitting unit. The micro-processor receives the second electric signal and converts the second electric signal into a digital signal. The feedback circuit modulates the driving signal for maintaining the optical stability of the first light signal so that the sensing system is less affected by environmental temperature fluctuation and noise interferences.

Abstract: The present invention relates to a photoelectrical feedback sensing system. A first light signal passes through the sensing apparatus. A second light signal corresponding to a characteristic of a sample within the sensing apparatus is outputted from the sensing apparatus. The first photo detector receives the first light signal and outputs a first electric signal corresponding to the intensity of the first light signal. The second photo detector outputs a second electric signal corresponding to the intensity of the second light signal. A driving signal is generated by the micro-processor to drive the light-emitting unit. The micro-processor receives the second electric signal and converts the second electric signal into a digital signal. The feedback circuit modulates the driving signal for maintaining the optical stability of the first light signal so that the sensing system is less affected by environmental temperature fluctuation and noise interferences.

Abstract: A storage capacitor structure comprising a first capacitor electrode on a substrate, a capacitor dielectric layer on the first capacitor electrode and a second capacitor electrode on the capacitor dielectric layer, a passivation layer on the second capacitor electrode and a pixel electrode layer on the passivation layer. The second capacitor electrode has an area smaller than the first capacitor electrode. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer and the second capacitor electrode are electrically connected through the opening in the passivation layer.

Abstract: A storage capacitor structure comprising a first capacitor electrode on a substrate, a capacitor dielectric layer on the first capacitor electrode and a second capacitor electrode on the capacitor dielectric layer, a passivation layer on the second capacitor electrode and a pixel electrode layer on the passivation layer. The second capacitor electrode has an area smaller than the first capacitor electrode. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer and the second capacitor electrode are electrically connected through the opening in the passivation layer.

Abstract: A storage capacitor structure comprising a first capacitor electrode on a substrate, a capacitor dielectric layer on the first capacitor electrode and a second capacitor electrode on the capacitor dielectric layer, a passivation layer on the second capacitor electrode and a pixel electrode layer on the passivation layer. The second capacitor electrode has an area smaller than the first capacitor electrode. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer and the second capacitor electrode are electrically connected through the opening in the passivation layer.

Abstract: A storage capacitor structure comprising a first capacitor electrode on a substrate, a capacitor dielectric layer on the first capacitor electrode and a second capacitor electrode on the capacitor dielectric layer, a passivation layer on the second capacitor electrode and a pixel electrode layer on the passivation layer. The second capacitor electrode has an area smaller than the first capacitor electrode. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer and the second capacitor electrode are electrically connected through the opening in the passivation layer.

Abstract: A storage capacitor structure comprising a first capacitor electrode over a substrate, a capacitor dielectric layer over the first capacitor electrode and a second capacitor electrode over the capacitor dielectric layer, a passivation layer over the second capacitor electrode and a pixel electrode layer over the passivation layer. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer has a protruding section that permits electrical connection with the second capacitor electrode through the opening in the passivation layer. If the first capacitor electrode and the second capacitor electrode are in short circuit, the protruding section may be cut to detach the pixel electrode layer from the second capacitor electrode.

Abstract: A storage capacitor structure comprising a first capacitor electrode on a substrate, a capacitor dielectric layer on the first capacitor electrode and a second capacitor electrode on the capacitor dielectric layer, a passivation layer on the second capacitor electrode and a pixel electrode layer on the passivation layer. The second capacitor electrode has an area smaller than the first capacitor electrode. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer and the second capacitor electrode are electrically connected through the opening in the passivation layer.

Abstract: A storage capacitor structure comprising a first capacitor electrode over a substrate, a capacitor dielectric layer over the first capacitor electrode and a second capacitor electrode over the capacitor dielectric layer, a passivation layer over the second capacitor electrode and a pixel electrode layer over the passivation layer. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer has a protruding section that permits electrical connection with the second capacitor electrode through the opening in the passivation layer. If the first capacitor electrode and the second capacitor electrode are in short circuit, the protruding section may be cut to detach the pixel electrode layer from the second capacitor electrode.