Patents by Inventor Chin-Jung Wang

Chin-Jung Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming openings in low dielectric constant material layer
    Patent number: 6638871
    Abstract: The invention is directed towards a method for forming openings in low-k dielectric layers. A cap layer, a low-k dielectric layer, a metal hard mask layer and a hard mask layer are formed in sequence on a provided substrate with metal wires. After patterning the metal hard mask layer and the hard mask layer to form a first opening, a fluid filling material layer is formed on the hard mask layer and fills the first opening. Using a patterned photoresist layer as a mask to define the filling material layer and the low-k dielectric layer, a second opening is obtained. After removing the photoresist layer along with the filling material layer, a damascene opening is formed by using the metal hard mask and the hard mask layers as a mask and the cap layer as an etching stop layer.
    Type: Grant
    Filed: January 10, 2002
    Date of Patent: October 28, 2003
    Assignee: United Microlectronics Corp.
    Inventors: Chin-Jung Wang, Tong-Yu Chen
  • Method for forming openings in low dielectric constant material layer
    Publication number: 20030129842
    Abstract: The invention is directed towards a method for forming openings in low-k dielectric layers. A cap layer, a low-k dielectric layer, a metal hard mask layer and a hard mask layer are formed in sequence on a provided substrate with metal wires. After patterning the metal hard mask layer and the hard mask layer to form a first opening, a fluid filling material layer is formed on the hard mask layer and fills the first opening. Using a patterned photoresist layer as a mask to define the filling material layer and the low-k dielectric layer, a second opening is obtained. After removing the photoresist layer along with the filling material layer, a damascene opening is formed by using the metal hard mask and the hard mask layers as a mask and the cap layer as an etching stop layer.
    Type: Application
    Filed: January 10, 2002
    Publication date: July 10, 2003
    Inventors: Chin-Jung Wang, Tong-Yu Chen