Patents by Inventor Chin-Jyi Wu

Chin-Jyi Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130167920
    Abstract: A fabricating method of a conductive substrate including the following steps is provided. A substrate is provided. A barrier layer having a first roughened surface is formed on the substrate by an atmospheric pressure plasma process, wherein the surface roughness (Ra) of the first roughened surface formed by the atmospheric pressure plasma process is between 10 nanometers (nm) and 100 nm. A first electrode layer is formed on the first roughened surface of the barrier layer by a vacuum sputter process, wherein a second roughened surface with the surface roughness (Ra) between 10 nm and 100 nm is formed on a surface of the first electrode layer. Furthermore, a photoelectric conversion layer is formed on the second roughened surface of the first electrode layer. A second electrode layer is formed on the photoelectric conversion layer. A solar cell and a conductive substrate are also provided.
    Type: Application
    Filed: August 6, 2012
    Publication date: July 4, 2013
    Applicants: BAY ZU PRECISION CO., LTD., INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Chun-Hsien Su, Dao-Yang Huang
  • Patent number: 8381678
    Abstract: A wide area atmospheric pressure plasma jet apparatus including a transmission mechanism, a plasma housing and two plasma-generating devices is provided. The transmission mechanism includes a rotation output end that has a center axis. The plasma housing has an opening. The plasma housing further has a air-attracting hole near the rotation output end and extended from an outer wall of the plasma housing to the interior of the plasma housing, so that the heat of the plasma housing can be dissipated due to the generated gas circulation. The plasma-generating devices are disposed within the plasma housing and connected with the rotation output end. Each of the plasma-generating devices has a plasma nozzle located at the opening and tilts from the center axis. When the rotation output end drives the plasma-generating devices to rotate, two plasma beams are obliquely ejected from the plasma nozzle and the plasma processing area is increased.
    Type: Grant
    Filed: July 13, 2009
    Date of Patent: February 26, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Chen-Der Tsai, Wen-Tung Hsu, Chin-Jyi Wu, Chih-Wei Chen
  • Patent number: 8281741
    Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle ?1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle ?2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: October 9, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Shin-Chih Liaw, Chun-Hung Lin
  • Patent number: 8212174
    Abstract: A casing is used for being rotatably disposed in a plasma jet system. The casing is rotated around a central axis. The casing comprises a main body and a plasma nozzle. The main body has a first cavity. The plasma nozzle is disposed under the main body and has a second cavity and a straight channel. The second cavity is connected to the first cavity. The straight channel is located at a side of the plasma nozzle opposite to the main body and connected to the second cavity. The straight channel has an extension axis which is substantially parallel with the central axis and separated from the central axis by an interval. Plasma generated by the plasma jet system jets out through the straight channel.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: July 3, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Chen-Der Tsai, Wen-Tung Hsu, Chin-Jyi Wu, Chih-Wei Chen
  • Patent number: 8158211
    Abstract: A method for manufacturing an anti-reflection structure is provided. The method includes the following steps: First, a to-be-treated object is provided in a reactive area. Next, a plasma source is provided in the reactive area. Then, the plasma source is ionized to form plasma in atmospheric pressure. Next, the surface of the to-be-treated object is treated by plasma so as to form a plurality of micro-protuberances on the surface of the to-be-treated object.
    Type: Grant
    Filed: December 24, 2008
    Date of Patent: April 17, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Chih-Wei Chen, Chin-Jyi Wu, Wen-Tzong Hsieh, Wen-Tung Hsu, Chun-Hung Lin
  • Patent number: 8075790
    Abstract: A film removal method and apparatus for removing a film from a substrate are disclosed. The method comprises the steps of disposing a plasma generator and a sucking apparatus over the substrate, projecting a plasma beam from the plasma generator onto the film obliquely, disposing the sucking apparatus on a reflection path of plasma projected by the plasma generator, and sucking a by-product of an incomplete plasma reaction occurring to the film so as to keep a surface of the substrate clean, with a view to overcoming the drawbacks of deposition of the by-product which results from using the plasma as a surface cleansing means under atmospheric conditions.
    Type: Grant
    Filed: April 1, 2008
    Date of Patent: December 13, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Chen-Der Tsai, Chun-Hung Lin
  • Patent number: 8011085
    Abstract: A method of fabricating a clamping device for a flexible substrate is provided. A carrier board is provided. A plurality of holes is formed in the carrier board. A fixed positioning assembly and a movable positioning assembly are respectively embedded in the plurality of holes.
    Type: Grant
    Filed: August 17, 2009
    Date of Patent: September 6, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chin-Jyi Wu, Chen-Der Tsai, Yun-Chuan Tu, Te-Chi Wong
  • Publication number: 20110171426
    Abstract: A hard water-repellent structure and a method for fabricating the same are provided. The method adopts an atmospheric pressure plasma deposition (APPD) technique to form a hard coating having a rough surface on a substrate, and form a water-repellent coating on the rough surface. Because the hard water-repellent structure includes the hard coating and the water-repellent coating, hardness, abrasion-resistance, transparency and hydrophobicity of the hard water-repellent structure are improved. The hard water-repellent structure protects the substrate from friction. Moreover, because the disclosure adopts the APPD technique to form the hard water-repellent structure, the cost of production is reduced dramatically. Thus, the disclosure can solve drawbacks of prior art.
    Type: Application
    Filed: February 22, 2011
    Publication date: July 14, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chih-Wei Chen, Chun-Hung Lin, Tsung-Hui Cheng, Chih-Yuan Chen, Te-Hui Yang, Chen-Der Tsai, Chin-Jyi Wu, Yun-Chuan Tu, Chia-Chiang Chang
  • Publication number: 20110120372
    Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle ?1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle ?2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.
    Type: Application
    Filed: February 1, 2011
    Publication date: May 26, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Shin-Chih Liaw, Chun-Hung Lin
  • Patent number: 7926170
    Abstract: A method of fabricating a clamping device for a flexible substrate is provided. A carrier board having a first positing holes and a plurality of second position holes is provided, wherein the first and the second position holes correspond in position to a plurality of through holes on the flexible substrate. A portion of the carrier board material close to the second position holes is removed to form a hole body and a plurality of curved extending arms connected to the hole body and the carrier board. A first dowel pin and a plurality of second dowel pins are provided for inserting into the first positioning hole and the second positioning holes, respectively.
    Type: Grant
    Filed: August 17, 2009
    Date of Patent: April 19, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chin-Jyi Wu, Chen-Der Tsai, Yun-Chuan Tu, Te-Chi Wong
  • Patent number: 7923076
    Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle ?1 of 0° to 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting apparatus is placed in the chamber and over the pedestal. The gas-extracting apparatus comprises a gas-extracting pipe providing a pumping path for particles and side-products having a pumping direction angle ?2 of 0° to 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe.
    Type: Grant
    Filed: December 21, 2006
    Date of Patent: April 12, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Shin-Chih Liaw, Chun-Hung Lin
  • Publication number: 20110073563
    Abstract: A patterning method for a carbon-based substrate is provided. The patterning method for the carbon-based substrate includes the following steps. The carbon-based substrate is provided. An atmospheric pressure plasma is produced from a plasma gas under an open air environment. The plasma gas includes oxygen. The carbon-based substrate is etched by the atmospheric pressure plasma.
    Type: Application
    Filed: September 25, 2009
    Publication date: March 31, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Shu-Jiuan Huang, Wen-Tung Hsu, Chih-Ming Hu, Shin-Liang Kuo
  • Publication number: 20100164353
    Abstract: A wide area atmospheric pressure plasma jet apparatus including a transmission mechanism, a plasma housing and two plasma-generating devices is provided. The transmission mechanism includes a rotation output end that has a center axis. The plasma housing has an opening. The plasma housing further has a air-attracting hole near the rotation output end and extended from an outer wall of the plasma housing to the interior of the plasma housing, so that the heat of the plasma housing can be dissipated due to the generated gas circulation. The plasma-generating devices are disposed within the plasma housing and connected with the rotation output end. Each of the plasma-generating devices has a plasma nozzle located at the opening and tilts from the center axis. When the rotation output end drives the plasma-generating devices to rotate, two plasma beams are obliquely ejected from the plasma nozzle and the plasma processing area is increased.
    Type: Application
    Filed: July 13, 2009
    Publication date: July 1, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chen-Der Tsai, Wen-Tung Hsu, Chin-Jyi Wu, Chih-Wei Chen
  • Publication number: 20100147808
    Abstract: A casing is used for being rotatably disposed in a plasma jet system. The casing is rotated around a central axis. The casing comprises a main body and a plasma nozzle. The main body has a first cavity. The plasma nozzle is disposed under the main body and has a second cavity and a straight channel. The second cavity is connected to the first cavity. The straight channel is located at a side of the plasma nozzle opposite to the main body and connected to the second cavity. The straight channel has an extension axis which is substantially parallel with the central axis and separated from the central axis by an interval. Plasma generated by the plasma jet system jets out through the straight channel.
    Type: Application
    Filed: August 7, 2009
    Publication date: June 17, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chen-Der Tsai, Wen-Tung Hsu, Chin-Jyi Wu, Chih-Wei Chen
  • Publication number: 20090300897
    Abstract: A method of fabricating a clamping device for a flexible substrate is provided. A carrier board having a first positing holes and a plurality of second position holes is provided, wherein the first and the second position holes correspond in position to a plurality of through holes on the flexible substrate. A portion of the carrier board material close to the second position holes is removed to form a hole body and a plurality of curved extending arms connected to the hole body and the carrier board. A first dowel pin and a plurality of second dowel pins are provided for inserting into the first positioning hole and the second positioning holes, respectively.
    Type: Application
    Filed: August 17, 2009
    Publication date: December 10, 2009
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: CHIN-JYI WU, CHEN-DER TSAI, YUN-CHUAN TU, TE-CHI WONG
  • Publication number: 20090300898
    Abstract: A method of fabricating a clamping device for a flexible substrate is provided. A carrier board is provided. A plurality of holes is formed in the carrier board. A fixed positioning assembly and a movable positioning assembly are respectively embedded in the plurality of holes.
    Type: Application
    Filed: August 17, 2009
    Publication date: December 10, 2009
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: CHIN-JYI WU, CHEN-DER TSAI, YUN-CHUAN TU, TE-CHI WONG
  • Patent number: 7591066
    Abstract: A clamping device for a flexible substrate is provided. The clamping device includes a carrier board. The carrier board has a fixed positioning assembly and a plurality of movable positioning assemblies. The fixed positioning assembly and the movable positioning assemblies are disposed in locations that almost correspond to a plurality of through holes on the flexible substrate. The fixed positioning assembly includes a hole body with a positioning hole and a dowel pin. Each movable positioning assembly includes a hole body with a positioning hole, a plurality of curved extending arms and a dowel pin. Each curved extending arm is connected to the hole body and the carrier board and the dowel pin is inserted into the positioning hole.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: September 22, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: Chin-Jyi Wu, Chen-Der Tsai, Yun-Chuan Tu, Te-Chi Wong
  • Publication number: 20090169822
    Abstract: A method for manufacturing an anti-reflection structure is provided. The method includes the following steps: First, a to-be-treated object is provided in a reactive area. Next, a plasma source is provided in the reactive area. Then, the plasma source is ionized to form plasma in atmospheric pressure. Next, the surface of the to-be-treated object is treated by plasma so as to form a plurality of micro-protuberances on the surface of the to-be-treated object.
    Type: Application
    Filed: December 24, 2008
    Publication date: July 2, 2009
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chih-Wei Chen, Chin-Jyi Wu, Wen-Tzong Hsieh, Wen-Tung Hsu, Chun-Hung Lin
  • Publication number: 20090159212
    Abstract: A jet plasma gun and a plasma device using the same are provided. The jet plasma gun is for jetting plasma to process a surface of a substrate. The jet plasma gun includes a plasma producer, a plasma nozzle and a barrier. The plasma producer is for providing plasma. The plasma nozzle disposed between the substrate and plasma producer has a first opening and a second opening. The first opening faces plasma producer, and the second opening faces the substrate. The barrier being an insulator is disposed between the plasma nozzle and the substrate and has a through hole corresponding to the second opening. The plasma passes through the plasma nozzle and the through hole to reach the substrate.
    Type: Application
    Filed: June 11, 2008
    Publication date: June 25, 2009
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chia-Chiang Chang, Chen-Der Tsai, Wen-Tung Hsu, Chih-Wei Chen, Chin-Jyi Wu
  • Patent number: 7532300
    Abstract: A method for producing an alignment layer for a liquid crystal panel, which is produced by modifying an alignment film in a fixed direction and at a fixed angle by using an atmospheric pressure plasma source to form a uniform and isotropic alignment layer on the surface of the substrate. The resultant alignment layer has good uniformity and high anchoring energy, and the pre-tilt angle can be selected as desired. In addition, there are no problems with static charge generation, dust pollution and the like as in the prior arts. The method of the present invention is not restricted by vacuum apparatuses that need ion alignment or vacuum plasma alignment and the like and is not restricted by the size of the equipment. Therefore, the method of the present invention is suitable for treating the surface of an alignment layer of a large size liquid crystal panel.
    Type: Grant
    Filed: August 14, 2006
    Date of Patent: May 12, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: Huang-Chin Tang, Chun-Hung Lin, Chih-Wei Chen, Chin-Jyi Wu, Chen-Der Tsai, Chin-Yang Lee