Abstract: The present invention provides a seal ring structure, which comprises a seal ring member. The seal ring member includes a first ring opening on one side and a second ring opening on the other. A periphery of the first ring opening includes a plurality of leak grooves. When the seal ring member and the valve ball squeeze each other, the plurality of leak grooves can reduce the torque required to rotate the valve ball. A leak-groove length of the plurality of leak grooves is smaller than a seal-ring-member length of the seal ring member. The plurality of leak grooves do not penetrate the seal ring member for avoiding leakage of fluid.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first transparent substrate, a conductive layer, an insulating protective layer, a second transparent substrate, a device substrate, and a bonding layer. The first transparent substrate has a first surface and an opposite second surface. The conductive layer is disposed on the second surface of the first transparent substrate. The insulating protective layer covers the conductive layer and the first transparent substrate. The second transparent substrate is disposed above the first transparent substrate, and has a first surface facing the first transparent substrate and an opposite second surface. The device substrate is disposed on the second surface of the second transparent substrate. The bonding layer is bonded to the insulating protective layer and the first surface of the second transparent substrate.

Abstract: The present invention provides a seal ring structure, which comprises a seal ring member. The seal ring member includes a first ring opening on one side and a second ring opening on the other. A periphery of the first ring opening includes a plurality of leak grooves. When the seal ring member and the valve ball squeeze each other, the plurality of leak grooves can reduce the torque required to rotate the valve ball. A leak-groove length of the plurality of leak grooves is smaller than a seal-ring-member length of the seal ring member. The plurality of leak grooves do not penetrate the seal ring member for avoiding leakage of fluid.

Abstract: The present invention provides a measurement device for grinding wheel. One or more thickness measurement device is disposed slidably on a platform. A spinning device is disposed on the platform. A grinding wheel is fixed on the spinning device. The spinning shaft spins the grinding wheel. The one or more thickness measurement device measures the flatness condition of the grinding wheel. Furthermore, according to the present invention, a diameter measurement device is disposed inside the platform and measures the roundness of the outer periphery of the grinding wheel. Since the structure can be disassembled easily, the whole measurement device for grinding wheel can be carried conveniently. In addition, measurements can be performed by users on the site where the grinding wheel is located for real-timely understanding the real size and wear condition of grinding wheel.

Abstract: The present invention provides a measurement device for grinding wheel. One or more thickness measurement device is disposed slidably on a platform. A spinning device is disposed on the platform. A grinding wheel is fixed on the spinning device. The spinning shaft spins the grinding wheel. The one or more thickness measurement device measures the flatness condition of the grinding wheel. Furthermore, according to the present invention, a diameter measurement device is disposed inside the platform and measures the roundness of the outer periphery of the grinding wheel. Since the structure can be disassembled easily, the whole measurement device for grinding wheel can be carried conveniently. In addition, measurements can be performed by users on the site where the grinding wheel is located for real-timely understanding the real size and wear condition of grinding wheel.

Abstract: A chip package includes a chip, an insulating layer and a conductive layer. The chip includes a substrate, an epitaxy layer, a device region and a conductive pad. The epitaxy layer is disposed on the substrate, and the device region and the conductive pad are disposed on the epitaxy layer. The conductive pad is at a side of the device region and connected to the device region. The conductive pad protrudes out of a side surface of the epitaxy layer. The insulating layer is disposed below the substrate and extended to cover the side surface of the epitaxy layer. The conductive layer is disposed below the insulating layer and extended to contact the conductive pad. The conductive layer and the side surface of the epitaxy layer are separated by a first distance.

Abstract: A chip package includes a chip, an insulating layer and a conductive layer. The chip includes a substrate, an epitaxy layer, a device region and a conductive pad. The epitaxy layer is disposed on the substrate, and the device region and the conductive pad are disposed on the epitaxy layer. The conductive pad is at a side of the device region and connected to the device region. The conductive pad protrudes out of a side surface of the epitaxy layer. The insulating layer is disposed below the substrate and extended to cover the side surface of the epitaxy layer. The conductive layer is disposed below the insulating layer and extended to contact the conductive pad. The conductive layer and the side surface of the epitaxy layer are separated by a first distance.