Patents by Inventor Chin-Kun Lin
Chin-Kun Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9979422Abstract: An adaptive digital pre-distortion system includes a transmitting module and a receiving module. The transmitting module is configured to receive a first signal and includes a modulator, pre-distortion module, and transmitting circuit. The pre-distortion module is coupled to the modulator to perform a pre-distortion operation in accordance with the first modulation signal and generate a first pre-distortion signal. The transmitting circuit generates a first transmitted signal in accordance with the first pre-distortion signal. The receiving module is configured to receive the first transmitted signal and includes a receiving circuit, demodulator, and prediction module.Type: GrantFiled: December 15, 2016Date of Patent: May 22, 2018Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Yih-Min Chen, Chin-Kun Lin, Ting-Yu Lai, Cheih Tu, Chen-Chia Ku, Chien-Te Yu
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Patent number: 8759218Abstract: A chemical mechanical polishing process includes placing a substrate on a first polishing pad of a first platen, wherein the substrate has a bulk metal layer and a barrier layer; polishing the bulk metal layer by using the first polishing pad having a hardness of above 50 (Shore D) until the barrier layer is exposed; polishing the barrier layer on a second polishing pad of a second platen after removing the bulk metal layer, wherein the second polishing pad has a hardness ranging between 40 and 50 (Shore D) and includes an upper layer and a lower backing layer and the upper layer has a hardness less than 50 (Shore D).Type: GrantFiled: December 28, 2011Date of Patent: June 24, 2014Assignee: United Microelectronics Corp.Inventors: Boon-Tiong Neo, Chin-Kun Lin, Lee-Lee Lau
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Publication number: 20120094488Abstract: A chemical mechanical polishing process includes placing a substrate on a first polishing pad of a first platen, wherein the substrate has a bulk metal layer and a barrier layer; polishing the bulk metal layer by using the first polishing pad having a hardness of above 50 (Shore D) until the barrier layer is exposed; polishing the barrier layer on a second polishing pad of a second platen after removing the bulk metal layer, wherein the second polishing pad has a hardness ranging between 40 and 50 (Shore D) and includes an upper layer and a lower backing layer and the upper layer has a hardness less than 50 (Shore D).Type: ApplicationFiled: December 28, 2011Publication date: April 19, 2012Inventors: Boon-Tiong Neo, Chin-Kun Lin, Lee-Lee Lau
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Patent number: 8129278Abstract: A copper/barrier CMP process includes (a) providing a substrate having a bulk metal layer and a barrier layer; (b) polishing the substrate with a first hard polishing pad on a first platen to substantially remove an upper portion of the bulk metal layer, wherein the first hard polishing pad has a hardness of above 50 (Shore D); (c) polishing the substrate with a second hard polishing pad on a second platen to remove residual copper, thereby exposing the barrier layer, wherein the second hard polishing pad has a hardness of above 50 (Shore D); and (d) polishing the substrate with a third hard polishing pad on a third platen to remove the barrier layer, wherein the third hard polishing pad has a hardness ranging between 40-50 (Shore D).Type: GrantFiled: November 14, 2005Date of Patent: March 6, 2012Assignee: United Microelectronics Corp.Inventors: Boon-Tiong Neo, Chin-Kun Lin, Lee-Lee Lau
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Patent number: 7432205Abstract: The invention is directed to a method for controlling a polishing process. The method comprises steps of providing a first wafer, wherein a thin film is located over the first wafer. A film average thickness distribution is obtained by measuring a plurality of thickness values of the thin film on a plurality regions over the wafer respectively. A removal rate recipe is determined according to the film average thickness distribution. A polishing process is performed according to the removal rate recipe.Type: GrantFiled: December 15, 2005Date of Patent: October 7, 2008Assignee: United Microelectronics Corp.Inventors: Ching-Wen Teng, Chin-Kun Lin, Boon Tiong Neo
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Publication number: 20080242198Abstract: A multi-step planarizing and polishing method includes performing a first and a second polishing steps, wherein one of the two polishing steps is performed using a silica abrasive based slurry, while the other one of the two polishing steps is performed using a CeO2 abrasive based slurry. A third polishing step is further performed using a fixed abrasive pad. Further, the thickness deviation of wafers entering the third polishing step is controlled.Type: ApplicationFiled: March 26, 2007Publication date: October 2, 2008Applicant: UNITED MICROELECTRONICS CORP.Inventors: Lee-Lee Lau, Chin-Kun Lin, Boon-Tiong Neo, Ching-Wen Teng
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Publication number: 20070298694Abstract: A wafer polishing head according to the invention is disclosed. In the wafer polishing head, an automatic control device is additionally installed outside the wafer polishing head for automatically adjusting a pressure applied on a retaining ring. This ensures the bottom of the retaining ring always lower than that of a carrier, thereby preventing a semiconductor wafer from slip during polishing. Furthermore, a liquid pressure generated to press the carrier can efficiently alleviate wabble during polishing. Therefore, the wafer polishing head of the invention can greatly improve a polishing uniformity.Type: ApplicationFiled: September 5, 2007Publication date: December 27, 2007Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chin-Kun Lin, Jian-Shing Lai, Peng-Yih Peng, Chia-Jui Chang
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Publication number: 20070240734Abstract: A post-CMP wafer is loaded into a buffer unit of a cleaning apparatus and is kept moist by adding a chemical. The post-CMP wafer is then loaded into a cleaning unit of the cleaning apparatus for performing the following cleaning process. The chemical added in the buffer unit is used to reduce the adhesion of benzotriazole (BTA) for improving the cleanliness of the post-CMP wafer.Type: ApplicationFiled: April 14, 2006Publication date: October 18, 2007Inventors: Ching-Wen Teng, Chin-Kun Lin, Yu-Hsiang Tseng, Boon-Tiong Neo
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Publication number: 20070138140Abstract: The invention is directed to a method for controlling a polishing process. The method comprises steps of providing a first wafer, wherein a thin film is located over the first wafer. A film average thickness distribution is obtained by measuring a plurality of thickness values of the thin film on a plurality regions over the wafer respectively. A removal rate recipe is determined according to the film average thickness distribution. A polishing process is performed according to the removal rate recipe.Type: ApplicationFiled: December 15, 2005Publication date: June 21, 2007Inventors: Ching-Wen Teng, Chin-Kun Lin, Boon Neo
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Publication number: 20070111517Abstract: A copper/barrier CMP process includes (a) providing a substrate having a bulk metal layer and a barrier layer; (b) polishing the substrate with a first hard polishing pad on a first platen to substantially remove an upper portion of the bulk metal layer, wherein the first hard polishing pad has a hardness of above 50 (Shore D); (c) polishing the substrate with a second hard polishing pad on a second platen to remove residual copper, thereby exposing the barrier layer, wherein the second hard polishing pad has a hardness of above 50 (Shore D); and (d) polishing the substrate with a third hard polishing pad on a third platen to remove the barrier layer, wherein the third hard polishing pad has a hardness ranging between 40-50 (Shore D).Type: ApplicationFiled: November 14, 2005Publication date: May 17, 2007Inventors: Boon-Tiong Neo, Chin-Kun Lin, Lee-Lee Lau
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Patent number: 7052376Abstract: A wafer carrier gap washer includes at least one wafer carrier head and at least one nozzle installed on a wafer load/unload mechanism. The wafer carrier head has a flexible membrane and a retaining ring for holding a wafer beneath the wafer carrier head during a CMP process. The nozzle sprays fluid toward a gap between the flexible membrane and the retaining ring so as to wash the gap and remove slurry residues produced in the CMP process.Type: GrantFiled: May 26, 2005Date of Patent: May 30, 2006Assignee: United Microelectronics Corp.Inventors: Ming-Hsing Kao, Ching-Wen Teng, Chin-Kun Lin, Wee-Shiong Tan
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Patent number: 7004820Abstract: A method for chemical mechanical polishing (CMP) includes a rinsing process performed to clean an orifice of a slurry supplier and other elements of a CMP device. The CMP device includes least one nozzle disposed in the periphery of a base. The function of the nozzle is to spray DI water to the orifice of the slurry supplier so as to prevent slurry residue and clogging.Type: GrantFiled: May 26, 2005Date of Patent: February 28, 2006Assignee: United Microelectronics Corp.Inventors: Ching-Wen Teng, Ming-Hsing Kao, Chin-Kun Lin, Er-Yang Chua, Lee-Lee Lau
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Patent number: 6755726Abstract: A polishing head with a floating knife-edge mechanism includes a base, a retaining ring secured to the base defining a pocket area beneath the base, and a lower assembly floating within the pocket area via a diaphragm seal. The lower assembly includes a disk-shaped support plate having a plurality of apertures distributed in a center region of the support plate, a clamp ring used to secure the diaphragm seal along a rim region of the support plate, and the floating knife-edge mechanism positioned between the rim region and the center region of the support plate.Type: GrantFiled: March 25, 2002Date of Patent: June 29, 2004Assignee: United Microelectric Corp.Inventors: Tzu-Shin Chen, Ming-Hsing Kao, Chin-Kun Lin, Wen-Chin Lin
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Publication number: 20030181153Abstract: A polishing head with a floating knife-edge mechanism includes a base, a retaining ring secured to the base defining a pocket area beneath the base, and a lower assembly floating within the pocket area via a diaphragm seal. The lower assembly includes a disk-shaped support plate having a plurality of apertures distributed in a center region of the support plate, a clamp ring used to secure the diaphragm seal along a rim region of the support plate, and the floating knife-edge mechanism positioned between the rim region and the center region of the support plate.Type: ApplicationFiled: March 25, 2002Publication date: September 25, 2003Inventors: Tzu-Shin Chen, Ming-Hsing Kao, Chin-Kun Lin, Wen-Chin Lin