Abstract: A method of manufacturing a semiconductor package includes: (a) providing a carrier; (b) disposing a dielectric layer and a conductive pad on the carrier; (c) disposing a redistribution layer on the dielectric layer to electrically connect to the conductive pad; (d) connecting a die to the redistribution layer; (e) removing at least a portion of the carrier to expose the conductive pad; and (f) disposing an electrical contact to electrically connect to the conductive pad.

Abstract: A semiconductor package structure includes: (1) a first substrate; (2) at least one first semiconductor element attached to the first substrate; and (3) a second substrate including a plurality of thermal vias and a plurality of conductive vias, wherein one end of each of the thermal vias directly contacts the first semiconductor element.

Abstract: A semiconductor package structure includes a first substrate, at least one first semiconductor element and a second substrate. The first semiconductor element is attached to the first substrate. The second substrate defines a cavity and includes a plurality of thermal vias. One end of each of the thermal vias is exposed in the cavity, and the first semiconductor element is disposed within the cavity and thermally connected to the thermal vias.

Abstract: A semiconductor package structure includes a first substrate, at least one first semiconductor element and a second substrate. The first semiconductor element is attached to the first substrate. The second substrate defines a cavity and includes a plurality of thermal vias. One end of each of the thermal vias is exposed in the cavity, and the first semiconductor element is disposed within the cavity and thermally connected to the thermal vias.

Abstract: The measurement equipment includes a rack, a first image capturing device, a second image capturing device, a third image capturing device and a fourth image capturing device. Wherein, the first image capturing device and the second image capturing device capture an entire image of a to-be-measured object, the third image capturing device and the fourth image capturing device capture a plurality of local images of a plurality of local areas of the to-be-measured object, and the entire image and the local images and are simultaneously captured.

Abstract: A semiconductor package device includes a first interconnection structure, a non-silicon interposer and a first die. The first interconnection structure has a first pitch. The non-silicon interposer surrounds the first interconnection structure. The non-silicon interposer includes a second interconnection structure having a second pitch. The second pitch is larger than the first pitch. The first die is above the first interconnection structure and is electrically connected to the first interconnection structure.

Abstract: A semiconductor package device includes a first interconnection structure, a non-silicon interposer and a first die. The first interconnection structure has a first pitch. The non-silicon interposer surrounds the first interconnection structure. The non-silicon interposer includes a second interconnection structure having a second pitch. The second pitch is larger than the first pitch. The first die is above the first interconnection structure and is electrically connected to the first interconnection structure.

Abstract: The present disclosure relates to a semiconductor package and a manufacturing method thereof. The semiconductor package includes a semiconductor element including a main body, a plurality of conductive vias, and at least one filler. The conductive vias penetrate through the main body. The filler is located in the main body, and a coefficient of thermal expansion (CTE) of the filler is different from that of the main body and the conductive vias. Thus, the CTE of the overall semiconductor element can be adjusted, so as to reduce warpage.

Abstract: A semiconductor device package includes a package substrate, a first electronic device, a second electronic device and a first molding layer. The package substrate includes a first surface, a second surface opposite to the first surface, and an edge. The first electronic device is positioned over and electrically connected to the package substrate through the first surface. The second electronic device is positioned over and electrically connected to the first electronic device. The first molding layer is positioned over the package substrate, and the first molding layer encapsulates a portion of the first surface and the edge of the package substrate.

Abstract: A method of manufacturing a semiconductor package includes: (a) providing a carrier; (b) disposing a dielectric layer and a conductive pad on the carrier; (c) disposing a redistribution layer on the dielectric layer to electrically connect to the conductive pad; (d) connecting a die to the redistribution layer; (e) removing at least a portion of the carrier to expose the conductive pad; and (f) disposing an electrical contact to electrically connect to the conductive pad.

Abstract: The measurement equipment includes a rack, a first image capturing device, a second image capturing device, a third image capturing device and a fourth image capturing device. Wherein, the first image capturing device and the second image capturing device capture an entire image of a to-be-measured object, the third image capturing device and the fourth image capturing device capture a plurality of local images of a plurality of local areas of the to-be-measured object, and the entire image and the local images and are simultaneously captured.

Abstract: In one or more embodiments, a semiconductor package includes a redistribution layer, a conductive pad, a dielectric layer, a silicon layer, and a conductive contact. The redistribution layer includes a first surface and a second surface opposite to the first surface. The conductive pad is on the first surface of the redistribution layer. The dielectric layer is disposed on the first surface of the redistribution layer to cover a first portion of the conductive pad and to expose a second portion of the conductive pad. The silicon layer is disposed on the dielectric layer, the silicon layer having a recess to expose the second portion of the conductive pad. The conductive contact is disposed over the silicon layer and extends into the recess of the silicon layer.

Abstract: The measurement equipment includes a rack, a first image capturing device, a second image capturing device, a third image capturing device and a fourth image capturing device. Wherein, the first image capturing device and the second image capturing device capture an entire image of a to-be-measured object, the third image capturing device and the fourth image capturing device capture a plurality of local images of a plurality of local areas of the to-be-measured object, and the entire image and the local images and are simultaneously captured.

Abstract: A semiconductor device includes a first die, a second die, an encapsulant, a first dielectric layer, and at least one first trace. The first die includes a first surface and a second surface opposite to the first surface and includes at least one first pad disposed adjacent to the first surface of the first die. The second die includes a first surface and a second surface opposite to the first surface and includes at least one second pad disposed adjacent to the first surface of the second die. The first dielectric layer is disposed on at least a portion of the first surface of the first die and at least a portion of the first surface of the second die. The first trace is disposed on the first dielectric layer, which connects the first pad to the second pad, and the first trace comprises an end portion disposed adjacent to the first pad and a body portion, and the end portion extends at an angle ?1 relative to a direction of extension of the body portion.

Abstract: A semiconductor device package includes a package substrate, a first electronic device, a second electronic device and a first molding layer. The package substrate includes a first surface, a second surface opposite to the first surface, and an edge. The first electronic device is positioned over and electrically connected to the package substrate through the first surface. The second electronic device is positioned over and electrically connected to the first electronic device. The first molding layer is positioned over the package substrate, and the first molding layer encapsulates a portion of the first surface and the edge of the package substrate.

Abstract: In one or more embodiments, a semiconductor package includes a redistribution layer, a conductive pad, a dielectric layer, a silicon layer, and a conductive contact. The redistribution layer includes a first surface and a second surface opposite to the first surface. The conductive pad is on the first surface of the redistribution layer. The dielectric layer is disposed on the first surface of the redistribution layer to cover a first portion of the conductive pad and to expose a second portion of the conductive pad. The silicon layer is disposed on the dielectric layer, the silicon layer having a recess to expose the second portion of the conductive pad. The conductive contact is disposed over the silicon layer and extends into the recess of the silicon layer.

Abstract: The present disclosure relates to a semiconductor package and a manufacturing method thereof The semiconductor package includes a semiconductor element including a main body, a plurality of conductive vias, and at least one filler. The conductive vias penetrate through the main body. The filler is located in the main body, and a coefficient of thermal expansion (CTE) of the filler is different from that of the main body and the conductive vias. Thus, the CTE of the overall semiconductor element can be adjusted, so as to reduce warpage.

Abstract: The present disclosure relates to a semiconductor package and a manufacturing method thereof. The semiconductor package includes a semiconductor element including a main body, a plurality of conductive vias, and at least one filler. The conductive vias penetrate through the main body. The filler is located in the main body, and a coefficient of thermal expansion (CTE) of the filler is different from that of the main body and the conductive vias. Thus, the CTE of the overall semiconductor element can be adjusted, so as to reduce warpage.

Abstract: The present disclosure relates to a semiconductor package structure and a method for manufacturing the same. The semiconductor package structure includes a leadframe and a semiconductor die. The leadframe includes a main portion and a protrusion portion. The semiconductor die is bonded to a first surface of the main portion. The protrusion portion protrudes from a second surface of the main portion. The position of the protrusion portion corresponds to the position of the semiconductor die.

Abstract: Described herein are interposer substrate designs for warpage control, semiconductor structures including said interposer substrates, and fabricating processes thereof. An interposer substrate defines a cavity and further includes a reinforcement structure, wherein the reinforcement structure is used to control warpage of the semiconductor package structure.