Patents by Inventor Chin-Liang Cheng

Chin-Liang Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11931187
    Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: March 19, 2024
    Assignees: Chang Gung Medical Foundation Chang Gung Memorial Hospital at Keelung, Chang Gung Memorial Hospital, Linkou, Chang Gung University
    Inventors: Jiun-Jie Wang, Yi-Hsin Weng, Shu-Hang Ng, Jur-Shan Cheng, Yi-Ming Wu, Yao-Liang Chen, Wey-Yil Lin, Chin-Song Lu, Wen-Chuin Hsu, Chia-Ling Chen, Yi-Chun Chen, Sung-Han Lin, Chih-Chien Tsai
  • Publication number: 20240079229
    Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes: forming a transistor region in a substrate; forming a gate dielectric layer over the transistor region; forming a diffusion-blocking layer over the gate dielectric layer; forming a first portion of a work function layer over the diffusion-blocking layer; forming a second portion of the work function layer over the first portion of the work function layer; forming a plurality of barrier elements on or under a top surface of the second portion of the work function layer; and forming a gate electrode over the work function layer, wherein the plurality of barrier elements block oxygen from diffusing into the work function layer during the formation of the gate electrode.
    Type: Application
    Filed: September 1, 2022
    Publication date: March 7, 2024
    Inventors: CHIA CHAN FAN, CHUNG-LIANG CHENG, CHIN-CHIA YEH, CHIEH CHIANG, CHENG YU PAI
  • Patent number: 6325964
    Abstract: A method of manufacturing a high-density titanium alloy article is disclosed. The method comprises a mixing and granulating step, a high-pressure molding step, and a high-temperature sintering step. Moreover, by means of selecting proper size of titanium raw powder and granulating the titanium raw powder and other metallic powder into titanium-based grains, a titanium alloy article having a high density is obtainable.
    Type: Grant
    Filed: September 18, 2000
    Date of Patent: December 4, 2001
    Assignee: New Century Technology Co., Ltd.
    Inventors: Jean Chan, Chin-Liang Cheng