Abstract: A safety-critical smart battery management system with the capability of charging single battery cells and discharging battery pack, which comprises smart battery pack, a smart battery charging module and a smart battery discharging module. In the smart battery pack, many cells in a battery group are charged separately at a time. The smart battery discharging module is used to discharge the smart battery pack, so as to achieve the efficacy of a promoted charging efficiency, an increased overall energy source efficiency, and a prolonged battery lifetime. The mechanism has plugging and automatic electric disconnection. Whenever a safety issue or a not-in-use state presents, the smart battery discharging module may be automatically separated with a load. The cells may be avoided from a self-discharging, which successively causes fire catching and thus an explosion and adversely affects a lifetime of the cells, thereby promoting a safety and reliability of the battery system.

Abstract: A safety-critical smart battery management system with the capability of charging single battery cells and discharging battery pack, which comprises smart battery pack, a smart battery charging module and a smart battery discharging module. In the smart battery pack, many cells in a battery group are charged separately at a time. The smart battery discharging module is used to discharge the smart battery pack, so as to achieve the efficacy of a promoted charging efficiency, an increased overall energy source efficiency, and a prolonged battery lifetime. The mechanism has plugging and automatic electric disconnection. Whenever a safety issue or a not-in-use state presents, the smart battery discharging module may be automatically separated with a load. The cells may be avoided from a self-discharging, which successively causes fire catching and thus an explosion and adversely affects a lifetime of the cells, thereby promoting a safety and reliability of the battery system.

Abstract: A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.

Abstract: A three-dimensional SoC structure formed by stacking multiple chip modules is provided. The three-dimensional SoC structure includes at least two vertical SoC modules and at least one connector module, wherein each connector module electrically connects two vertical SoC modules. Each vertical SoC module is constructed by stacking at least two chip modules vertically. Each chip module includes a module circuit board and at least one preset element. A recess is formed in each module circuit board and provided with a first connecting interface for electrically connecting with the corresponding at least one preset element. The at least two vertical SoC modules are connected by the connector module to form a three-dimensional SoC structure with multiple functions. Besides, the recesses formed in the module circuit boards provide effective heat dissipation paths for the preset elements.

Abstract: A multi-layer system-on-chip (SoC) module structure is provided. The multi-layer SoC module structure includes at least two circuit board module layers and at least one connector module layer. Each connector module layer is sandwiched between and thus electrically connects two circuit board module layers such that the SoC module structure is formed by stacking. Each circuit board module layer is composed of at least one circuit board module while each connector module layer is composed of at least one connector module. Hence, the SoC module structure can be manufactured as a three-dimensional structure, thus allowing highly flexible connections within the SoC module structure.

Abstract: The present invention discloses a virtualized peripheral hardware platform system. The virtualized peripheral hardware platform system includes a first hardware platform and a software platform, which is executed in a second hardware platform. The first hardware platform is in signal communication with the second hardware platform. The software platform not only simulates the operation of the peripheral device of the first hardware platform but also simulates input signals of virtual peripheral devices and then transmits the input signals to the first hardware platform to conduct further calculations. Furthermore, the input/output (I/O) interface of the second hardware platform can be simulated as the I/O interface of the first hardware platform, so as to decrease the number of the I/O interface which the first hardware platform needed and downsize the first hardware platform.

Abstract: A device including a virtual drive system is provided. An image file can be identified as an ordinary physical disk drive via the device. The device includes a storage unit, an image management unit, and an operating-system interface. The storage unit is configured to store at least one image file. The image management unit includes an image management program which can manage the image files to be selected. The operating-system interface is connected by electrical signals with an operating-system apparatus and is controlled by the image management program to send a controlling signal to the operating-system apparatus. Therefore, the operating-system apparatus can identify as many physical disk drives as the corresponding selected image files.

Abstract: A yield evaluating apparatus and a method thereof are provided. The yield evaluating apparatus includes a spatial correlation module. The spatial correlation module receives at least one process-related data and a plurality of circuit layouts and obtains a correlation coefficient between unit elements in the circuit layouts according to the process-related data. The spatial correlation module calculates a spatial correlation between elements in each of the circuit layouts according to the correlation coefficient and selects one of the circuit layouts according to the spatial correlations.

Abstract: A DHT-based OFDM transmitter and receiver use discrete Hartley transform to implement multicarrier transmission. A transmission terminal (or a receiving terminal) of a transmitter and receiver comprises two IDHT (or DHT) processors and a diagonal processing device. The two IDHT processors make the DHT-OFDM system transmit the 2D modulation signal to increase the bandwidth efficiency. The diagonal processing device is used to diagonalize the circulant channel matrix into discrete memoryless subchannels, and thus only one-tap frequency domain equalizer can compensate the channel effects. Besides, the proposed DHT-OFDM transmitter and receiver are also compatible with a conventional DFT-OFDM system, and they can flexibly works with the conventional DFT-OFDM transmitter and receiver.

Abstract: A three-dimensional SoC structure formed by stacking multiple chip modules is provided. The three-dimensional SoC structure includes at least two vertical SoC modules and at least one connector module, wherein each connector module electrically connects two vertical SoC modules. Each vertical SoC module is constructed by stacking at least two chip modules vertically. Each chip module includes a module circuit board and at least one preset element. A recess is formed in each module circuit board and provided with a first connecting interface for electrically connecting with the corresponding at least one preset element. The at least two vertical SoC modules are connected by the connector module to form a three-dimensional SoC structure with multiple functions. Besides, the recesses formed in the module circuit boards provide effective heat dissipation paths for the preset elements.

Abstract: The present invention discloses a unitized charging and discharging battery management system and a programmable battery management module thereof The unitized charging and discharging battery management system includes a smart battery module and a programmable battery management module, which has a universal loop and a control unit. The smart battery module has at least two smart batteries which are electrically connected by a plurality of switches and circuits of the universal loop to form a charging/discharging loop in series/parallel. The control unit monitors the charging and discharging status of the smart batteries to turn on or off the switches accordingly, so as to manage the smart batteries, thereby enhancing the overall power efficacy of the smart battery module. Besides, the service life of the smart battery module is also prolonged due to the simultaneous charging and discharging capability.

Abstract: A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.

Abstract: A method of fabricating a single chip for integrating a field-effect transistor into a microelectromechanical systems (MEMS) structure is provided. The method includes the steps of: providing a substrate having thereon at least one transistor structure, a MEMS structure and a blocking structure, wherein the blocking structure encircles the MEMS structure to separate the MEMS structure from the transistor structure; forming a masking layer for covering the transistor structure, the MEMS structure and the blocking structure; forming a patterned photoresist layer on the masking layer; performing a first etching process by using the patterned photoresist layer to remove the masking layer on the MEMS structure; and performing a second etching process by removing a portion of the MEMS structure to form a plurality of microstructures such that a relative motion among the microstructures takes place in a direction perpendicular to the substrate.

Abstract: A multi-layer system-on-chip (SoC) module structure is provided. The multi-layer SoC module structure includes at least two circuit board module layers and at least one connector module layer. Each connector module layer is sandwiched between and thus electrically connects two circuit board module layers such that the SoC module structure is formed by stacking. Each circuit board module layer is composed of at least one circuit board module while each connector module layer is composed of at least one connector module. Hence, the SoC module structure can be manufactured as a three-dimensional structure, thus allowing highly flexible connections within the SoC module structure.

Abstract: A fabrication method for a system-on-chip (SoC) module is provided. The fabrication method includes the steps of providing at least two SoC sub-modules and connecting the SoC sub-modules. The SoC sub-modules are electrically connected with each other by connection interfaces of the SoC sub-modules so as to form the SoC module. As the SoC sub-modules have been verified in advance, the time required for verifying the resulting SoC module can be significantly reduced. As for application-specific SoC modules, they are fabricated by connecting with application-specific SoC sub-modules via the appropriate connection interfaces. Thus, the time and costs for developing SoC modules can both be minimized.

Abstract: An edge-missing detector structure includes a first detector, a first delay unit, a first logic gate, a second detector, a second delay unit, and a second logic gate. After being input separately into the edge-missing detector structure, a first reference signal and a first clock signal are detected by the first and second detectors and then subjected to cycle suppression by the first and second logic gates, respectively, so as to generate a second reference signal and a second clock signal which present a phase difference less than 2?. Moreover, the edge-missing detector structure generates a compensative current corresponding to the number of occurrences of cycle suppression. Thus, a phase-locked loop (PLL) using the edge-missing detector structure can avoid cycle slip problems and achieve fast acquisition of phase lock.

Abstract: A programmable frequency divider with a full dividing range includes a plurality of cascaded 2/1 frequency dividers. Each of the 2/1 frequency dividers has a first input node, a first output node, a second input node, a second output node and a third input node. The first input node receives a first clock signal divided by the 2/1 frequency divider and outputted as a second clock signal through the first output node. A second logical signal is generated according to the second clock signal, the first clock signal and a first logical signal received from the second input node. The 2/1 frequency divider selectively switches to perform a divide-by-two or divide-by-one operation according to the second logical signal and a first divisor signal received from the third input nodes. The programmable frequency divider provides the full dividing range as the result of utilizing various divisor of the 2/1 frequency divider.

Abstract: An edge-missing detector structure includes a first detector, a first delay unit, a first logic gate, a second detector, a second delay unit, and a second logic gate. After being input separately into the edge-missing detector structure, a first reference signal and a first clock signal are detected by the first and second detectors and then subjected to cycle suppression by the first and second logic gates, respectively, so as to generate a second reference signal and a second clock signal which present a phase difference less than 2?. Moreover, the edge-missing detector structure generates a compensative current corresponding to the number of occurrences of cycle suppression. Thus, a phase-locked loop (PLL) using the edge-missing detector structure can avoid cycle slip problems and achieve fast acquisition of phase lock.

Abstract: The present invention discloses a carrier structure of a System-on-Chip (SoC) with a custom interface. The carrier structure includes a substrate, at least one common die, at least one custom interface and a molding compound. The common die and the custom interface are disposed on the substrate. The molding compound is used to package the common die which electrically connects to the substrate and the custom interface respectively. The carrier structure which includes the common die can form a complete SoC by connecting to an expansive die through the custom interface. The carrier structure with the common die which can be tested and certified in advance allows reducing and simplifying the developing procedures of the SoC.

Abstract: A yield evaluating apparatus and a method thereof are provided. The yield evaluating apparatus includes a spatial correlation module. The spatial correlation module receives at least one process-related data and a plurality of circuit layouts and obtains a correlation coefficient between unit elements in the circuit layouts according to the process-related data. The spatial correlation module calculates a spatial correlation between elements in each of the circuit layouts according to the correlation coefficient and selects one of the circuit layouts according to the spatial correlations.