Abstract: A method of forming bifacial solar cell structure is described. The method comprises: performing boron diffusion on an upper surface of a semiconductor substrate to form a P+ region and a boron silicon glass (BSG) layer on the P+ region; stripping the BSG layer to expose the P+ region and stripping a blocking layer on a lower surface of the semiconductor substrate simultaneously; forming a first anti-reflection coating layer on the P+ region; forming sacrifice film on the first anti-reflection coating layer; performing phosphorus diffusion on the lower surface to form an N+ region and a phosphorus silicon glass (PSG) layer on the N+ region; stripping the PSG layer on the N+ region to expose the N+ region and stripping the sacrifice film on the first anti-reflection coating layer simultaneously; and forming a second anti-reflection coating layer on the N+ region.