Abstract: A pixel structure of an organic light emitting diode display comprises a substrate and a plurality of pixels arranged on the substrate. The plurality of pixels is closely arranged. Each of the pixels is a light-emitting region. Each of the pixels comprises a plurality of sub-regions arranged in at least one column. Each sub-region of each of the column of the pixels comprises a color sub-pixel, a transparent sub-pixel or a sensing component. At least one of the pluralities of sub-regions of each pixel is the sensing component and the sensing component is arranged in the light-emitting region. The pixel structure of the organic light emitting diode display of the disclosure has a sensing function in addition to the display function, and at the same time the such arrangement enables the display to have a resolution of more than 500 ppi.

Abstract: The present disclosure provides an organic light emitting diode and method for manufacturing the same. The organic light emitting diode includes a substrate; an anode layer formed on a substrate, a hole transmission layer formed on the anode layer, a hole transmission auxiliary layer formed on the hole transmission layer and performed by a photolithography process, wherein the hole transmission auxiliary layer protects a surface of the hole transmission layer, at least one illuminating block formed on the hole transmission auxiliary layer, wherein the hole transmission auxiliary layer is electrically connected between the at least one illuminating block and the hole transmission layer, an electron transmission auxiliary layer formed on the at least one illuminating block; an electron transmission layer formed on the electron transmission auxiliary layer and a cathode layer formed on the electron transmission layer.

Abstract: The present disclosure provides an organic light emitting diode and method for manufacturing the same. The organic light emitting diode includes a substrate; an anode layer formed on a substrate, a hole transmission layer formed on the anode layer, a hole transmission auxiliary layer formed on the hole transmission layer and performed by a photolithography process, wherein the hole transmission auxiliary layer protects a surface of the hole transmission layer, at least one illuminating block formed on the hole transmission auxiliary layer, wherein the hole transmission auxiliary layer is electrically connected between the at least one illuminating block and the hole transmission layer, an electron transmission auxiliary layer formed on the at least one illuminating block; an electron transmission layer formed on the electron transmission auxiliary layer and a cathode layer formed on the electron transmission layer.

Abstract: The present invention discloses a vertical thin film transistor and a method for fabricating the same. A vertical current path is formed in a vertical direction of the thin film transistor, thereby increasing the channel length for a given layout area. The design for the pixel circuit plays an important role in managing the compensation process instability. A relatively long channel is usually needed for driving a thin film transistor so as to improve electrical stability of components, regardless of the compensation circuit used. The present invention provides a vertical thin film transistor having a top gate, such that a current path is formed in the Z direction in addition to the current paths in the X-Y direction. Such scheme increases the effective channel length for a given area, thereby reducing the required layout area. Also, the short-channel effect can be reduced for a gate length of 2 ?m.

Abstract: The present disclosure provides an organic light emitting diode and method for manufacturing the same. The organic light emitting diode includes a substrate; an anode layer formed on a substrate, a hole transmission layer formed on the anode layer, a hole transmission auxiliary layer formed on the hole transmission layer and performed by a photolithography process, wherein the hole transmission auxiliary layer protects a surface of the hole transmission layer, at least one illuminating block formed on the hole transmission auxiliary layer, wherein the hole transmission auxiliary layer is electrically connected between the at least one illuminating block and the hole transmission layer, an electron transmission auxiliary layer formed on the at least one illuminating block; an electron transmission layer formed on the electron transmission auxiliary layer and a cathode layer formed on the electron transmission layer.

Abstract: A pixel structure of an organic light emitting diode display comprises a substrate and a plurality of pixels arranged on the substrate. The plurality of pixels is closely arranged. Each of the pixels is a light-emitting region. Each of the pixels comprises a plurality of sub-regions arranged in at least one column. Each sub-region of each of the column of the pixels comprises a color sub-pixel, a transparent sub-pixel or a sensing component. At least one of the pluralities of sub-regions of each pixel is the sensing component and the sensing component is arranged in the light-emitting region. The pixel structure of the organic light emitting diode display of the disclosure has a sensing function in addition to the display function, and at the same time the such arrangement enables the display to have a resolution of more than 500 ppi.

Abstract: A method for current compensation in an electroluminescent (EL) display is provided. The method includes measuring an intensity of light of a pixel unit, identifying a pixel unit to be one that needs compensation if the measured intensity exceeds a predetermined threshold, determining the magnitude of a compensation current, and providing an image data corresponding to the magnitude of the compensation current to the identified pixel unit.

Abstract: The present invention discloses a vertical thin film transistor and a method for fabricating the same. A vertical current path is formed in a vertical direction of the thin film transistor, thereby increasing the channel length for a given layout area. The design for the pixel circuit plays an important role in managing the compensation process instability. A relatively long channel is usually needed for driving a thin film transistor so as to improve electrical stability of components, regardless of the compensation circuit used. The present invention provides a vertical thin film transistor having a top gate, such that a current path is formed in the Z direction in addition to the current paths in the X-Y direction. Such scheme increases the effective channel length for a given area, thereby reducing the required layout area. Also, the short-channel effect can be reduced for a gate length of 2 ?m.