Patents by Inventor Chin-Shan Wang

Chin-Shan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12211698
    Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: January 28, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Siao-Shan Wang, Cheng-Han Wu, Ching-Yu Chang, Chin-Hsiang Lin
  • Publication number: 20240107750
    Abstract: A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode, and the insulating layer extends above a top-most surface of the substrate.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 28, 2024
    Inventors: Chin-Shan WANG, Shun-Yi LEE
  • Patent number: 11864376
    Abstract: A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate.
    Type: Grant
    Filed: July 8, 2021
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Shan Wang, Shun-Yi Lee
  • Patent number: 11270952
    Abstract: A semiconductor structure includes a semiconductor strip in a seal ring area. The semiconductor structure further includes a dielectric structure extending into the semiconductor strip, wherein a plurality of metal structures and a plurality of via structures stack over the dielectric structure to form a seal ring structure.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: March 8, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Shan Wang, Shun-Yi Lee
  • Publication number: 20210343723
    Abstract: A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate.
    Type: Application
    Filed: July 8, 2021
    Publication date: November 4, 2021
    Inventors: Chin-Shan WANG, Shun-Yi LEE
  • Publication number: 20210296257
    Abstract: A method includes forming parallel first and second dummy materials in an alternating manner. The method further includes etching portions of the first and second dummy materials, using respective selective etches, to form a plurality of gaps. The method further includes filling a first gap of the plurality of gaps with a dielectric material. The method further includes filling a second gap of the plurality of gaps with a conductive material.
    Type: Application
    Filed: June 3, 2021
    Publication date: September 23, 2021
    Inventors: Chin-Shan WANG, Shun-Yi LEE
  • Patent number: 11088145
    Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode in the substrate. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate, and a sidewall of the insulating layer above the substrate is aligned with a sidewall of the insulating layer within the substrate.
    Type: Grant
    Filed: October 4, 2019
    Date of Patent: August 10, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Shan Wang, Shun-Yi Lee
  • Patent number: 11081480
    Abstract: The present disclosure provides a semiconductor structure, including: a transistor, including a gate structure and a source/drain structure; a source/drain contact, disposed over the source/drain structure; a gate contact, disposed over the gate structure; and a conductive bridge, disposed over the transistor, wherein the conductive bridge overlaps the source/drain contact from a top view perspective and electrically connecting the gate contact. The present disclosure also provides a method for forming the same.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: August 3, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chin-Shan Wang, Yi-Miaw Lin
  • Patent number: 10868185
    Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductive substrate, and a first contact plug formed on the semiconductive substrate. The semiconductor structure further includes a dielectric layer encircling the first contact plug. The semiconductor structure further includes a multilayer structure deposited on the dielectric layer and encircling the first contact plug. The dielectric layer produces a tensile stress pulling the first contact plug outward along a width direction. The multilayer structure produces a compressive stress that compensates for the tensile stress caused by the dielectric layer. A method of forming the semiconductor structure is also provided.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chin-Shan Wang, Yi-Miaw Lin, Ming-Yih Wang
  • Publication number: 20200168729
    Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductive substrate, and a first contact plug formed on the semiconductive substrate. The semiconductor structure further includes a dielectric layer encircling the first contact plug. The semiconductor structure further includes a multilayer structure deposited on the dielectric layer and encircling the first contact plug. The dielectric layer produces a tensile stress pulling the first contact plug outward along a width direction. The multilayer structure produces a compressive stress that compensates for the tensile stress caused by the dielectric layer. A method of forming the semiconductor structure is also provided.
    Type: Application
    Filed: November 27, 2018
    Publication date: May 28, 2020
    Inventors: CHIN-SHAN WANG, YI-MIAW LIN, MING-YIH WANG
  • Publication number: 20200118995
    Abstract: The present disclosure provides a semiconductor structure, including: a transistor, including a gate structure and a source/drain structure; a source/drain contact, disposed over the source/drain structure; a gate contact, disposed over the gate structure; and a conductive bridge, disposed over the transistor, wherein the conductive bridge overlaps the source/drain contact from a top view perspective and electrically connecting the gate contact. The present disclosure also provides a method for forming the same.
    Type: Application
    Filed: December 10, 2019
    Publication date: April 16, 2020
    Inventors: CHIN-SHAN WANG, YI-MIAW LIN
  • Publication number: 20200035684
    Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode in the substrate. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate, and a sidewall of the insulating layer above the substrate is aligned with a sidewall of the insulating layer within the substrate.
    Type: Application
    Filed: October 4, 2019
    Publication date: January 30, 2020
    Inventors: Chin-Shan WANG, Shun-Yi LEE
  • Patent number: 10505044
    Abstract: The present disclosure provides a semiconductor structure, including: a substrate having a gate structure; a first interlayer over the substrate; a contact adjacent to the gate structure and penetrating through the first interlayer; a dielectric layer over the first interlayer and the contact; a conductive plug electrically connecting with the gate structure and penetrating the first interlayer; and a conductive bridge electrically connecting with the conductive plug and being directly over the contact, the conductive bridge being separated from the contact by a portion of the dielectric layer.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: December 10, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chin-Shan Wang, Yi-Miaw Lin
  • Patent number: 10461085
    Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: October 29, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Shan Wang, Shun-Yi Lee
  • Publication number: 20190139903
    Abstract: A semiconductor structure includes a semiconductor strip in a seal ring area. The semiconductor structure further includes a dielectric structure extending into the semiconductor strip, wherein a plurality of metal structures and a plurality of via structures stack over the dielectric structure to form a seal ring structure.
    Type: Application
    Filed: December 17, 2018
    Publication date: May 9, 2019
    Inventors: Chin-Shan WANG, Shun-Yi LEE
  • Patent number: 10157856
    Abstract: A method of fabricating a semiconductor structure. The method includes forming a dummy structure over a semiconductor body. The method further includes depositing an inter-layer dielectric (ILD) over the semiconductor body. The method further includes removing a dummy material of the dummy structure to form an opening in the ILD. The method further includes filling the opening with a dielectric material to form a dielectric structure. The method further includes stacking a plurality of interconnect elements over the dielectric structure.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: December 18, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Shan Wang, Shun-Yi Lee
  • Patent number: 10147719
    Abstract: A semiconductor device includes a substrate, source/drain contacts, gate structures, conductive elements, and a first stop layer. The substrate has source/drain regions formed therein. The source/drain contacts are over the substrate and each of the source/drain contacts is electrically connected to the respective source/drain region. The gate structures are arranged in parallel on the substrate. The source/drain regions are arranged at opposite sides of the gate structures. Each of the gate structures is sandwiched between two most adjacent source/drain contacts. The conductive element is on the source/drain contacts and crosses over the gate structures. The conductive element is overlapped with at least one gate structure and at least two most adjacent source/drain contacts and is electrically connected to the at least two most adjacent source/drain contacts.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: December 4, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Shan Wang, Shun-Yi Lee
  • Patent number: 10037990
    Abstract: A semiconductor device includes an interconnect layer on an inter-layer dielectric (ILD) structure. The ILD structure includes: first contacts, extending through the ILD structure, electrically connected to corresponding first components located in a floor structure underlying the ILD structure; at least one second component located within the ILD structure and spaced from a surface of the ILD structure (in a direction perpendicular to a plane of the ILD structure) a distance which is less than a thickness of the ILD structure; and second contacts directly contacting corresponding first regions of the at least one second component. The interconnect layer includes: first metallization segments which directly contact corresponding ones of the first contacts; and second metallization segments located over a second region of the at least one second component, a width of the second metallization segments being less than a width of the first metallization segments.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: July 31, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Shan Wang, Shun-Yi Lee
  • Publication number: 20180151570
    Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode.
    Type: Application
    Filed: January 26, 2018
    Publication date: May 31, 2018
    Inventors: Chin-Shan WANG, Shun-Yi LEE
  • Publication number: 20180138168
    Abstract: A semiconductor device includes a substrate, source/drain contacts, gate structures, conductive elements, and a first stop layer. The substrate has source/drain regions formed therein. The source/drain contacts are over the substrate and each of the source/drain contacts is electrically connected to the respective source/drain region. The gate structures are arranged in parallel on the substrate. The source/drain regions are arranged at opposite sides of the gate structures. Each of the gate structures is sandwiched between two most adjacent source/drain contacts. The conductive element is on the source/drain contacts and crosses over the gate structures. The conductive element is overlapped with at least one gate structure and at least two most adjacent source/drain contacts and is electrically connected to the at least two most adjacent source/drain contacts.
    Type: Application
    Filed: November 17, 2016
    Publication date: May 17, 2018
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Shan Wang, Shun-Yi Lee