Abstract: The present disclosure relates to a complex probiotic composition and a method for improving exercise performance of a subject with low intrinsic aerobic exercise capacity. The complex probiotic composition, which includes Lactobacillus rhamnosus GKLC1, Bifidobacterium lactis GKK24 and Clostridium butyricum GKB7, administered to the subject with the low intrinsic aerobic exercise capacity in a continuation period, can effectively reduce serum lactic acid and serum urea nitrogen after aerobic exercise, reduce proportion of offal fat and/or increase liver and muscle glycogen contents, thereby being as an effective ingredient for preparation of various compositions.

Abstract: A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode, and the insulating layer extends above a top-most surface of the substrate.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate.

Abstract: A semiconductor structure includes a semiconductor strip in a seal ring area. The semiconductor structure further includes a dielectric structure extending into the semiconductor strip, wherein a plurality of metal structures and a plurality of via structures stack over the dielectric structure to form a seal ring structure.

Abstract: A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate.

Abstract: A method includes forming parallel first and second dummy materials in an alternating manner. The method further includes etching portions of the first and second dummy materials, using respective selective etches, to form a plurality of gaps. The method further includes filling a first gap of the plurality of gaps with a dielectric material. The method further includes filling a second gap of the plurality of gaps with a conductive material.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode in the substrate. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate, and a sidewall of the insulating layer above the substrate is aligned with a sidewall of the insulating layer within the substrate.

Abstract: The present disclosure provides a semiconductor structure, including: a transistor, including a gate structure and a source/drain structure; a source/drain contact, disposed over the source/drain structure; a gate contact, disposed over the gate structure; and a conductive bridge, disposed over the transistor, wherein the conductive bridge overlaps the source/drain contact from a top view perspective and electrically connecting the gate contact. The present disclosure also provides a method for forming the same.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductive substrate, and a first contact plug formed on the semiconductive substrate. The semiconductor structure further includes a dielectric layer encircling the first contact plug. The semiconductor structure further includes a multilayer structure deposited on the dielectric layer and encircling the first contact plug. The dielectric layer produces a tensile stress pulling the first contact plug outward along a width direction. The multilayer structure produces a compressive stress that compensates for the tensile stress caused by the dielectric layer. A method of forming the semiconductor structure is also provided.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductive substrate, and a first contact plug formed on the semiconductive substrate. The semiconductor structure further includes a dielectric layer encircling the first contact plug. The semiconductor structure further includes a multilayer structure deposited on the dielectric layer and encircling the first contact plug. The dielectric layer produces a tensile stress pulling the first contact plug outward along a width direction. The multilayer structure produces a compressive stress that compensates for the tensile stress caused by the dielectric layer. A method of forming the semiconductor structure is also provided.

Abstract: The present disclosure provides a semiconductor structure, including: a transistor, including a gate structure and a source/drain structure; a source/drain contact, disposed over the source/drain structure; a gate contact, disposed over the gate structure; and a conductive bridge, disposed over the transistor, wherein the conductive bridge overlaps the source/drain contact from a top view perspective and electrically connecting the gate contact. The present disclosure also provides a method for forming the same.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode in the substrate. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode, a top surface of the insulating layer is above a top surface of the substrate, and a sidewall of the insulating layer above the substrate is aligned with a sidewall of the insulating layer within the substrate.

Abstract: The present disclosure provides a semiconductor structure, including: a substrate having a gate structure; a first interlayer over the substrate; a contact adjacent to the gate structure and penetrating through the first interlayer; a dielectric layer over the first interlayer and the contact; a conductive plug electrically connecting with the gate structure and penetrating the first interlayer; and a conductive bridge electrically connecting with the conductive plug and being directly over the contact, the conductive bridge being separated from the contact by a portion of the dielectric layer.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode.

Abstract: A semiconductor structure includes a semiconductor strip in a seal ring area. The semiconductor structure further includes a dielectric structure extending into the semiconductor strip, wherein a plurality of metal structures and a plurality of via structures stack over the dielectric structure to form a seal ring structure.

Abstract: A method of fabricating a semiconductor structure. The method includes forming a dummy structure over a semiconductor body. The method further includes depositing an inter-layer dielectric (ILD) over the semiconductor body. The method further includes removing a dummy material of the dummy structure to form an opening in the ILD. The method further includes filling the opening with a dielectric material to form a dielectric structure. The method further includes stacking a plurality of interconnect elements over the dielectric structure.

Abstract: A semiconductor device includes a substrate, source/drain contacts, gate structures, conductive elements, and a first stop layer. The substrate has source/drain regions formed therein. The source/drain contacts are over the substrate and each of the source/drain contacts is electrically connected to the respective source/drain region. The gate structures are arranged in parallel on the substrate. The source/drain regions are arranged at opposite sides of the gate structures. Each of the gate structures is sandwiched between two most adjacent source/drain contacts. The conductive element is on the source/drain contacts and crosses over the gate structures. The conductive element is overlapped with at least one gate structure and at least two most adjacent source/drain contacts and is electrically connected to the at least two most adjacent source/drain contacts.

Abstract: A semiconductor device includes an interconnect layer on an inter-layer dielectric (ILD) structure. The ILD structure includes: first contacts, extending through the ILD structure, electrically connected to corresponding first components located in a floor structure underlying the ILD structure; at least one second component located within the ILD structure and spaced from a surface of the ILD structure (in a direction perpendicular to a plane of the ILD structure) a distance which is less than a thickness of the ILD structure; and second contacts directly contacting corresponding first regions of the at least one second component. The interconnect layer includes: first metallization segments which directly contact corresponding ones of the first contacts; and second metallization segments located over a second region of the at least one second component, a width of the second metallization segments being less than a width of the first metallization segments.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a first transistor on the substrate, wherein the first transistor includes a first source/drain electrode. The semiconductor device further includes a second transistor on the substrate, wherein the second transistor includes a second source/drain electrode. The semiconductor device further includes an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode and the second source/drain electrode.