Abstract: A transmission device for suppressing the glass-fiber effect includes a circuit board and a transmission line. The circuit board includes a plurality of glass fibers, so as to define a fiber pitch. The transmission line is disposed on the circuit board. The transmission line includes a plurality of non-parallel segments. Each of the non-parallel segments of the transmission line has an offset distance with respect to a reference line. The offset distance is longer than or equal to a half of the fiber pitch.

Abstract: This disclosure relates to a stretchable composite electrode and a fabricating method thereof, and particularly relates to a stretchable composite electrode including a silver nanowire layer and a flexible polymer film and a fabricating method thereof.

Abstract: An electronic device is provided. The electronic device includes a base and a conductive layer that is disposed on the base and patterned by a plurality of processes. The plurality of processes include providing a mask substrate. The mask substrate includes a first substrate and a patterned substrate. In the cross-sectional view, the width of the first substrate is greater than or equal to the width of the patterned substrate. The plurality of processes include arranging the mask substrate and the base correspondingly. The plurality of processes also include performing exposure and development processes on the conductive layer for patterning the conductive layer, and removing the mask substrate.

Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

Abstract: An semiconductor package includes a redistribution structure, a first semiconductor device, a second semiconductor device, an underfill layer and an encapsulant. The first semiconductor device is disposed on and electrically connected with the redistribution structure, wherein the first semiconductor device has a first bottom surface, a first top surface and a first side surface connecting with the first bottom surface and the first top surface, the first side surface comprises a first sub-surface and a second sub-surface connected with each other, the first sub-surface is connected with the first bottom surface, and a first obtuse angle is between the first sub-surface and the second sub-surface.

Abstract: A method for forming a chip package structure. The method includes bonding first connectors over a front surface of a semiconductor wafer. The method also includes dicing the semiconductor wafer from a rear surface of the semiconductor wafer to form semiconductor dies and mounting first and second semiconductor dies in the semiconductor dies over a top surface of the interposer substrate. The method further forming an encapsulating layer over the top surface of the interposer substrate to cover the first semiconductor die and the second semiconductor die. A first sidewall of the first semiconductor die faces a second sidewall of the second semiconductor die, and upper portions of the first sidewall and the second sidewall have a tapered contour, to define a top die-to-die distance and a bottom die-to-die distance that is less than the top die-to-die distance.

Abstract: A semiconductor package provided herein includes a wiring substrate, a semiconductor component, conductor terminals, a bottom stiffener and a top stiffener. The wiring substrate has a first surface and a second surface opposite to the first surface. The semiconductor component is disposed on the first surface of the wiring substrate. The conductor terminals are disposed on the second surface of the wiring substrate and electrically connected to the semiconductor component through the wiring substrate. The bottom stiffener is disposed on the second surface of the wiring substrate and positioned between the conductor terminals. The top stiffener is disposed on the first surface of the wiring substrate. The top stiffener is laterally spaced further away from the semiconductor component than the bottom stiffener.

Abstract: A multi-layered resonator circuit structure and a multi-layered filter circuit structure. The multi-layered resonator circuit structure includes a multi-layered substrate, a plurality of resonators and a plurality of conductive components. The multi-layered substrate has a top surface, a bottom surface, and a ground layer. The top surface and the bottom surface face away from each other. The ground layer is located between the top surface and the bottom surface. A part of the plurality of resonators is/are disposed on the top surface. Another part of the plurality of resonators is/are disposed on the bottom surface. The plurality of conductive components is located in the multi-layered substrate. The plurality of resonators is electrically connected to the ground layer, respectively, via the plurality of conductive components.

Abstract: A detection system and an operating method are provided. The detection system is used to estimate a degradation state of a battery device. The detection system includes a first operation circuit, a second operation circuit, and a processor. The first operation circuit receives voltage timing data of the battery device, and calculates a first reference value of the battery device according to the voltage timing data. The second operation circuit receives temperature timing data of the battery device, and calculates a second reference value of the battery device according to the temperature timing data. The processor provides state data related to the degradation state according to the first reference value and the second reference value.

Abstract: An electronic packaging structure including a first circuit structure, a second circuit structure and at least one electronic device is provided. The first circuit structure includes a bottom conductive plate having at least one cavity. The first circuit structure is disposed on the second circuit structure. The first circuit structure and the second circuit structure are electrically connected to each other. The electronic device is disposed on the second circuit structure. The electronic device is disposed corresponding to the cavity of the first circuit structure.

Abstract: The present invention provides an etching device which comprises an oxygen supplier, so that the etching device of the present invention can etch copper gently by means of the dissolved oxygen in the etching solution to accurately control the etching degree so as to fulfill the stricter requirements of microcircuit manufacturing. The present invention further provides an etching method. Finally, the etching waste solution of the present invention can be recycled to further ameliorate the environmental pollution and reduce the production cost, so the present invention is widely applicable in integrated circuit packaging.

Abstract: An electronic packaging structure including a first circuit structure, a second circuit structure and at least one electronic device is provided. The bottom side of the first circuit structure has at least one cavity. The first circuit structure is disposed on the second circuit structure. The first circuit structure and the second circuit structure are electrically connected to each other. The electronic device is disposed on the second circuit structure. The electronic device is disposed corresponding to the cavity of the first circuit structure.

Abstract: An electronic package structure and its manufacturing method are provided. The electronic package structure includes an interposer, a circuit board, a chip, and a circuit structure. The interposer includes an interposer substrate and a coaxial conductive element located in the interposer substrate. The interposer substrate includes a cavity. The coaxial conductive element includes a first conductive structure, a second conductive structure surrounding the first conductive structure, and a first insulation structure. The first insulation structure is disposed between the first and second conductive structures. The circuit board is disposed on a lower surface of the interposer substrate and electrically connected to the coaxial conductive element. The chip is disposed in the cavity and located on the circuit board, so as to be electrically connected to the circuit board.

Abstract: An electronic package structure and manufacturing method thereof. The electronic package structure includes a circuit board, an interposer, a chip, a circuit structure, and a coaxial conductive element. The interposer is disposed on the circuit board. The interposer has a through groove. The chip is disposed in the through groove and located on the circuit board to electrically connect with the circuit board. The circuit structure is disposed on the interposer. The coaxial conductive element penetrates the interposer to electrically connect the circuit structure and the circuit board. The coaxial conductive element includes a first conductive structure, a second conductive structure, and a first insulating structure. The second conductive structure surrounds the first conductive structure. The first insulating structure is disposed between the first conductive structure and the second conductive structure.

Abstract: A manufacturing method of a metal bump structure is provided. A driving base is provided. At least one pad and an insulating layer are formed on the driving base. The pad is formed on an arrangement surface of the driving base and has an upper surface. The insulating layer covers the arrangement surface of the driving base and the pad, and exposes a part of the upper surface of the pad. A patterned metal layer is formed on the upper surface of the pad exposed by the insulating layer, and extends to cover a part of the insulating layer. An electro-less plating process is performed to form at least one metal bump on the patterned metal layer. A first extension direction of the metal bump is perpendicular to a second extension direction of the driving base.

Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

Abstract: A circuit board structure includes a dielectric substrate, at least one embedded block, at least one electronic component, at least one first build-up circuit layer, and at least one second build-up circuit layer. The dielectric substrate includes a through cavity penetrating the dielectric substrate. The embedded block is fixed in the through cavity. The embedded block includes a first through hole and a second through hole. The electronic component is disposed in the through hole of the embedded block. The first build-up circuit layer is disposed on the top surface of the dielectric substrate and covers the embedded block. The second build-up circuit layer is disposed on the bottom surface of the dielectric substrate and covers the embedded block.

Abstract: A method for forming resistance on circuit board is provided and includes the following steps. First, a substrate is provided. Next, a second metal layer is provided on the substrate, and the first metal layer is covered by the second metal layer. Then, a resistance is formed on the second metal layer, and the resistance is directly above the first metal layer. Thereafter, the second metal layer is cut so that the edge of the second metal layer is aligned with that of the first metal layer. The second metal layer is separated from the first metal layer. Next, the second metal layer is pressed with a circuit board, and the resistance is attached to a dielectric layer of the circuit board. Then, the second metal layer is etched to form a circuit pattern on the resistance.

Abstract: A circuit board structure includes a dielectric substrate, at least one embedded block, at least one electronic component, at least one first build-up circuit layer, at least one second build-up circuit layer, at least one conductive through hole, and a fine redistribution layer (RDL). The embedded block is fixed in a through cavity of the dielectric substrate. The electronic component is disposed in an opening of the embedded block. The first build-up circuit layer is disposed on a top surface of the dielectric substrate and electrically connected with the electronic component. The second build-up circuit layer is disposed on a bottom surface of the dielectric substrate and covers the embedded block. The conductive through hole is disposed in a via of the embedded block and electrically connects the first and the second build-up circuit layers. The fine RDL is disposed on and electrically connected to the first build-up circuit layer.

Abstract: A circuit board structure includes a dielectric substrate, at least one embedded block, at least one electronic component, at least one first build-up circuit layer, and at least one second build-up circuit layer. The dielectric substrate includes a through cavity penetrating the dielectric substrate. The embedded block is fixed in the through cavity. The embedded block includes a first through hole and a second through hole. The electronic component is disposed in the through hole of the embedded block. The first build-up circuit layer is disposed on the top surface of the dielectric substrate and covers the embedded block. The second build-up circuit layer is disposed on the bottom surface of the dielectric substrate and covers the embedded block.