Abstract: The aroma lamp contains a base member having a circuit member and a plug. A fan module is positioned facing upward on a top surface of the base member. A hollow support member covers the top surface of the base member and the fan module. The support member has a vertical tube with surrounding openings which penetrates an aroma producing element and a light generating element is positioned at a top end of the vertical tube. A hollow lamp shade is detachably joined to the support member and houses the aroma producing element and the light generating element inside. When the plug is connected to an electrical socket, the fan module is turned on and drives air to flow upward against the aroma producing element. The aroma producing element vaporizes and the aroma is spread outside the lamp shade.

Abstract: The door knob contains a body assembly having a transparent cap member, a touch-sensitive member, and a connection member, joined together in this order along an axial direction of the door knob. The cap member is filled with a fluid of high viscosity dispersed with spangles. The touch-sensitive member contains a power element, a switch element that is turned on by electrostatics or vibration, and at least a light generating element. When the door knob is touched by hand, the switch element is closed by the electrostatics of the hand or the vibration of the door knob. By the received electricity from the power element, the light generating elements are turned on and the light penetrates through the transparent cap member to provide illumination.

Abstract: An aqua-lamp-incorporated bottle stopper includes a light-transmitting aqua lamp portion to which a touch control module is coupled. The touch control module includes a micro-switch that is employed to selectively actuate a power source to drive the operation of an illuminator for giving off light. Also coupled to the touch control module is a connection base that is a hollow structure forming an interior chamber that receives the touch control module therein and coupled to the light-transmitting aqua lamp portion. An opposite end of the connection base forms a fitting portion for fitting into a mouth of a bottle. As such, when a touch is applied to the bottle stopper, the micro-switch is shaken and actuated to have the touch control module activating the illuminator to give off light traveling to and through the light-transmitting aqua lamp portion for providing a decorative effect.

Abstract: The container device contains a base member, a circuit member housed inside the base member, and an illuminative member and a storage member, both on top of the base member. The storage member is for holding seasoning or fragrance. The illuminative member has a transparent hollow casing filled with a fluid of appropriate viscosity. The circuit member contains at least a light generating element and a switch element that is turned on and off by touching or shaking the container device. When the container device is touched by hand or shook, the switch element is turned on and the light generating elements are lit to provide illumination through the transparent illuminative member.

Abstract: An optoelectronic handhold includes a light-transmitting light emission portion and also has a touch control module, which includes a micro-switch for activating a power source to drive operation of an illuminator. A connection base includes a hollow structure having an end receiving therein the touch control module and coupled to the light-transmitting light emission portion and an opposite end forming a mounting portion for coupling with other structures for firm positioning. When a pull is applied to the handhold, the micro-switch is actuated to have the touch control module activating the illuminator to give off light traveling to and through the light-transmitting light emission portion for providing decoration.

Abstract: A method of forming a metal-oxide-semiconductor (MOS) transistor device is provided. First, a semiconductor substrate is prepared. Subsequently, a gate structure is formed on the semiconductor substrate. The gate structure includes a first strip portion and a second strip portion that is not parallel to the first strip portion. The gate structure further includes a junction between the first strip portion and the second strip portion. Thereafter, a stressed cap layer is formed on the semiconductor substrate, and covers the gate structure. Next, a portion of the stressed cap layer is removed to expose the junction between the first strip portion and the second strip portion.

Abstract: A fabricating method of an interconnect structure is provided. A first dielectric layer is formed on a substrate for covering an air gap region and a non-air gap region. Next, interconnects are formed in the first dielectric layer on the air gap region and in the first dielectric layer on the non-air gap region. Then, a cap layer is formed on the first dielectric layer. Thereafter, on the air gap region, a portion of the cap layer and a portion of the first dielectric layer are removed for forming first openings, and thereby a portion of the first dielectric layer are left between the interconnects for forming support pillars. After that, a second dielectric layer is formed over the substrate for covering the cap layer and the first openings, so as to form an air gap in each of the first openings.

Abstract: A semiconductor is provided. The semiconductor device includes a transistor, a first strain layer and a second strain layer on a substrate. The first strain layer is configured at the periphery of the transistor. The second strain layer covers the transistor and a region exposed by the first strain layer. The stress provided by the second strain layer is different from that by the first strain layer.

Abstract: A stress layer structure disposed on a substrate including a device region and a non-device region is provided. The device region includes active regions and a non-active region. The stress layer structure has stress patterns, at least one partition line, and at least one dummy stress pattern. Each of the stress patterns is disposed on the substrate of each of the active regions, respectively. The partition line exposes a portion of the substrate and divides the two adjacent stress patterns. The dummy stress pattern is disposed on the substrate in the partition line.

Abstract: A method of fabricating a semiconductor device is provided. Devices are formed on a core region and a non-core region in a substrate. A strain process is performed to the device on the core region but is not performed to the device on the non-core region.

Abstract: A liquid supply apparatus capable of removing micro-bubbles and particles is described, including a pipe, a laser provider and at least one micro-bubble/particle outlet. The laser provider provides a laser crossing the pipe, wherein the laser is provided in a manner such that a micro-bubble/particle blocking/repelling barrier is formed crossing the pipe blocking or repelling micro-bubbles, particles or both in the liquid in the pipe. The micro-bubble/particle outlet is disposed on the pipe between the barrier and the liquid inlet of the pipe, adjacent to the barrier for discharging micro-bubbles, particles or both.

Abstract: A semiconductor device including a composite structure and a contact is provided. The composite structure includes a bottom electrode, an insulating layer, and an upper electrode from bottom to top. The contact electrically connects the upper electrode and the bottom electrode. The composite structure is used as a resistor, and its resistance is increased by electrically connecting the upper electrode and the bottom electrode through the contact, doubling the current path.

Abstract: A pick-up structure for DRAM capacitors and a DRAM process are described. A substrate with trenches therein is provided, wherein the trenches include a first trench and the sidewall of each of the trenches is formed with a dielectric layer thereon. A conductive layer is formed on the surfaces of the substrate and the trenches, and then a patterned photoresist layer is formed on the conductive layer filling in the trenches and further covering the first trench. The exposed conductive layer is removed to form bottom electrodes in the trenches, and then the patterned photoresist layer is removed. A capacitor dielectric layer is formed on each bottom electrode, and then top electrodes are formed on the substrate filling up the trenches. A contact is then formed on the bottom electrode in the first trench, electrically connecting the substrate via the bottom electrode.

Abstract: A semiconductor device including a composite structure and a contact is provided. The composite structure includes a bottom electrode, an insulating layer, and an upper electrode from bottom to top. The contact electrically connects the upper electrode and the bottom electrode. The composite structure is used as a resistor, and its resistance is increased by electrically connecting the upper electrode and the bottom electrode through the contact, doubling the current path.

Abstract: Apparatus and a method for sensing the presence of a document on the transparent surface of an optical scanner involve moving a scanner optics carriage to a predetermined position beneath the transparent surface, reading a line of data, and if any of the data is on the "white" side of the gray-scale relative to a threshold, determining that a document is present in the scanner. Optionally, before determining whether a document is present, the apparatus and method may perform an initial threshold comparison to check for the presence of a dark background to ensure that an old document has been removed before the new document is read. The results of the document presence determination are used to generate a signal which is sent through a scanner interface to the host computer for use in automatically initiating a complete scan of a new document.