Patents by Inventor Chin-Shien Lu

Chin-Shien Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure of NPN-BJT for improving punch through between collector and emitter
    Patent number: 8581339
    Abstract: A bipolar junction transistor and a manufacturing method for the same are provided. The bipolar junction transistor includes a well region, an emitter electrode, a base electrode, a collector electrode, and a conductive layer. The emitter electrode, the base electrode and the collector electrode are separated from each other by the well region. The conductive layer is on the well region between the base electrode and the collector electrode.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: November 12, 2013
    Assignee: Macronix International Co., Ltd.
    Inventors: Chin-Wei Chang, Ching-Lin Chan, Chin-Shien Lu, Ming-Tung Lee, Shuo-Lun Tu
  • NOVEL STRUCTURE OF NPN-BJT FOR IMPROVING PUNCH THROUGH BETWEEN COLLECTOR AND EMITTER
    Publication number: 20130037914
    Abstract: A bipolar junction transistor and a manufacturing method for the same are provided. The bipolar junction transistor includes a well region, an emitter electrode, a base electrode, a collector electrode, and a conductive layer. The emitter electrode, the base electrode and the collector electrode are separated from each other by the well region. The conductive layer is on the well region between the base electrode and the collector electrode.
    Type: Application
    Filed: August 8, 2011
    Publication date: February 14, 2013
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chin-Wei Chang, Ching-Lin Chan, Chin-Shien Lu, Ming-Tung Lee, Shuo-Lun Tu