Patents by Inventor Chin-Shun Lin

Chin-Shun Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240092415
    Abstract: An HOD device, comprising: a framework; covering material, covering the frame work; at least one conductive region, provided on or in the covering material; wherein the conductive region is coupled to a capacitance detection circuit or a predetermined voltage level. The HOD device can be a vehicle control device such as a steering wheel. The conductive region comprises conductive wires which can be threads of the covering material. By this way, the arrangements of the conductive wires can be changed corresponding to the size or the shape of the frame work or any other requirements. Also, the interference caused by unstable factors can be improved since the conductive wires can be coupled to a ground source of the vehicle to provide a short capacitance sensing path.
    Type: Application
    Filed: September 21, 2022
    Publication date: March 21, 2024
    Applicant: PixArt Imaging Inc.
    Inventors: Chin-Hua Hu, Ching-Shun Chen, Yu-Han Chen, Yu-Sheng Lin
  • Patent number: 7517761
    Abstract: The invention is directed to a method for manufacturing a field plate of a high voltage device. The field plate is located on a drift region of a substrate, wherein an isolation structure is located on the drift region. The method comprises steps of forming a first dielectric layer over the substrate and then forming a first patterned conductive layer on the first dielectric layer, wherein the first patterned conductive layer is located over the isolation structure and exposes a portion of a top surface of the first dielectric layer. The exposed portion of the first dielectric layer is removed until a top surface of the isolation structure so as to form a plurality of vertical fin-type dielectric bottoms.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: April 14, 2009
    Assignee: United Microelectronics Corp.
    Inventors: Ching-Hung Kao, Chin-Shun Lin
  • Patent number: 7449748
    Abstract: The invention is directed to a method for manufacturing a field plate of a high voltage device. The field plate is located on a drift region of a substrate, wherein an isolation structure is located on the drift region. The method comprises steps of forming a first dielectric layer over the substrate and then forming a first patterned conductive layer on the first dielectric layer, wherein the first patterned conductive layer is located over the isolation structure and exposes a portion of a top surface of the first dielectric layer. The exposed portion of the first dielectric layer is removed until a top surface of the isolation structure so as to form a plurality of vertical fin-type dielectric bottoms.
    Type: Grant
    Filed: January 12, 2006
    Date of Patent: November 11, 2008
    Assignee: United Microelectronics Corp.
    Inventors: Ching-Hung Kao, Chin-Shun Lin
  • Publication number: 20080038911
    Abstract: The invention is directed to a method for manufacturing a field plate of a high voltage device. The field plate is located on a drift region of a substrate, wherein an isolation structure is located on the drift region. The method comprises steps of forming a first dielectric layer over the substrate and then forming a first patterned conductive layer on the first dielectric layer, wherein the first patterned conductive layer is located over the isolation structure and exposes a portion of a top surface of the first dielectric layer. The exposed portion of the first dielectric layer is removed until a top surface of the isolation structure so as to form a plurality of vertical fin-type dielectric bottoms.
    Type: Application
    Filed: October 19, 2007
    Publication date: February 14, 2008
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ching-Hung Kao, Chin-Shun Lin
  • Publication number: 20070170539
    Abstract: The invention is directed to a method for manufacturing a field plate of a high voltage device. The field plate is located on a drift region of a substrate, wherein an isolation structure is located on the drift region. The method comprises steps of forming a first dielectric layer over the substrate and then forming a first patterned conductive layer on the first dielectric layer, wherein the first patterned conductive layer is located over the isolation structure and exposes a portion of a top surface of the first dielectric layer. The exposed portion of the first dielectric layer is removed until a top surface of the isolation structure so as to form a plurality of vertical fin-type dielectric bottoms.
    Type: Application
    Filed: January 12, 2006
    Publication date: July 26, 2007
    Inventors: Ching-Hung Kao, Chin-Shun Lin
  • Publication number: 20040128033
    Abstract: The present invention provides a valve actuator with an embedded integrated chip. Said valve actuator can be connected directly to the Internet so as to achieve the object of dispersed controlling.
    Type: Application
    Filed: May 20, 2003
    Publication date: July 1, 2004
    Applicant: Metal Industries Research & Development Centre
    Inventors: Chia-Lin Ku, Chin-Shun Lin
  • Publication number: 20030196698
    Abstract: An axial flow control valve comprises a valve body having a flow passage containing therein a cylinder and an annular sleeve both are held in position by a positioning sleeve. The annular sleeve has a wall member formed with a multi-pores means for providing a number of V-shaped or elongate ports for reducing noise and vibration of fluid flow. A push rod is axially movably disposed within the cylinder, having one end attached with a resiliently biasing means for resiliently engaging a valve piston axially displaceable within the cylinder and the annular sleeve for controlling fluid flow. The positioning sleeve is formed with a truncated conical valve seat to associate with the valve piston for sealingly occluding fluid flow. O-rings made of resiliently metallic or ceramic material are disposed on the valve piston and/or the push rod for sealing the axially movable elements, so that the valve can be used in a high-temperature environment.
    Type: Application
    Filed: April 17, 2002
    Publication date: October 23, 2003
    Applicant: Metal Industries Research & Development Centre
    Inventors: Chin-Shun Lin, Kuo-Hung Lin