Abstract: In a method of forming a pattern, a first pattern is formed over an underlying layer, the first pattern including main patterns and a lateral protrusion having a thickness of less than 25% of a thickness of the main patterns, a hard mask layer is formed over the first pattern, a planarization operation is performed to expose the first pattern without exposing the lateral protrusion, a hard mask pattern is formed by removing the first pattern while the lateral protrusion being covered by the hard mask layer, and the underlying layer is patterned using the hard mask pattern as an etching mask.

Abstract: A first group of semiconductor fins are over a first region of a substrate, the substrate includes a first stepped profile between two of the first group of semiconductor fins, and the first stepped profile comprises a first lower step, two first upper steps, and two first step rises extending from opposite sides of the first lower step to the first upper steps. A second group of semiconductor fins are over a second region of the substrate, the substrate includes a second stepped profile between two of the second group of semiconductor fins, and the second stepped profile comprises a second lower step, two second upper steps, and two second step rises extending from opposite sides of the second lower step to the second upper steps, in which the second upper steps are wider than the first upper steps in the cross-sectional view.

Abstract: Batch semiconductor packaging structures with back-deposited shielding layer and manufacturing method are provided. A grid having multiple frames is glued on an adhesive substrate. Multiple semiconductor devices respectively align with corresponding frames and are stuck on the adhesive substrate. Then a metal layer covers the semiconductor devices and the grid. A distance between four peripheries of a bottom of each semiconductor device and the corresponding frame is smaller than a distance between the bottom and the adhesive substrate, so that the a portion of the metal layer extended to the peripheries of the bottom is effectively reduced during forming the metal layer. After the semiconductor devices are picked up, no metal scrap is remined thereon. Therefore, the adhesive substrate does not need to form openings in advance and is reusable. The grid is also reusable so the manufacturing cost of the present invention is decreased.

Abstract: A chip carrier device includes a frame, a chip support and a limiter. The chip support is disposed on the frame, and includes a supporting film for chips to be adhered thereto. A peripheral portion of the supporting film is attached to a surrounding frame part of the frame. A crossing portion of the supporting film passes through a center of the supporting film, and interconnects two opposite points of the peripheral portion. The supporting film is formed with through holes. The limiter includes a limiting part that interconnects two opposite points of the surrounding frame part, that is positioned corresponding to the crossing portion, and that is positioned on one side of the supporting film where the chips are to be arranged.

Abstract: A semiconductor package having a partial outer metal layer and packaging method thereof is disclosed. In the method, a specific packaging substrate or a specific positioning plate is used to package multiple semiconductor devices and a partial outer metal layer is quickly formed on an encapsulation of each semiconductor device in the same step.

Abstract: A wafer storage device includes a wafer cassette and a carrier plate. The wafer cassette includes a housing and a plurality pairs of retaining members disposed on lateral walls of the housing. The carrier plate is placed into the housing, is supported by one pair of the retaining members, and includes a plate body carrying the wafer thereon, and having a periphery formed with two slots extending respectively in two different radial directions of the wafer. Two positioning members respectively and radially correspond in position to the slots, and abut against an outer rim of the wafer.

Abstract: A head of chip picker is disclosed. The head has a clipping seat and an elastic block. The clipping seat has a body and two arms. The arms are respectively and downwardly extended from two opposite sides of an inner top surface of the body, so a cavity with a wide-top and narrow-bottom shape is constituted among the inner top surface and the arms. The elastic block matches the cavity and is laterally inserted into the cavity. The elastic block is not deformed after inserting into the cavity and provides a flat bottom surface.

Abstract: A laser cutting method for a wafer is provided. First, an active side of a wafer is cut by a laser to form multiple cutting grooves so that the thicker and harder layer of the integrated circuit on the active side is cut. Then the stealth laser is used to cut the backside of the wafer by aligning the beams of the stealth laser with the cutting grooves. Therefore, the cutting grooves easily extend to the backside of the wafer and penetrate through the wafer to dice the wafer into multiple independent chips.

Abstract: A semiconductor package having a partial outer metal layer and packaging method thereof is disclosed. In the method, a specific packaging substrate or a specific positioning plate is used to package multiple semiconductor devices and a partial outer metal layer is quickly formed on an encapsulation of each semiconductor device in the same step.

Abstract: Batch semiconductor packaging structures with back-deposited shielding layer and manufacturing method are provided. A grid having multiple frames is glued on an adhesive substrate. Multiple semiconductor devices respectively align with corresponding frames and are stuck on the adhesive substrate. Then a metal layer covers the semiconductor devices and the grid. A distance between four peripheries of a bottom of each semiconductor device and the corresponding frame is smaller than a distance between the bottom and the adhesive substrate, so that the a portion of the metal layer extended to the peripheries of the bottom is effectively reduced during forming the metal layer. After the semiconductor devices are picked up, no metal scrap is remined thereon. Therefore, the adhesive substrate does not need to form openings in advance and is reusable. The grid is also reusable so the manufacturing cost of the present invention is decreased.

Abstract: A chip carrier device includes a frame, a chip support and a limiter. The chip support is disposed on the frame, and includes a supporting film for chips to be adhered thereto. A peripheral portion of the supporting film is attached to a surrounding frame part of the frame. A crossing portion of the supporting film passes through a center of the supporting film, and interconnects two opposite points of the peripheral portion. The supporting film is formed with through holes. The limiter includes a limiting part that interconnects two opposite points of the surrounding frame part, that is positioned corresponding to the crossing portion, and that is positioned on one side of the supporting film where the chips are to be arranged.

Abstract: A wafer storage device includes a wafer cassette and a carrier plate. The wafer cassette includes a housing and a plurality pairs of retaining members disposed on lateral walls of the housing. The carrier plate is placed into the housing, is supported by one pair of the retaining members, and includes a plate body carrying the wafer thereon, and having a periphery formed with two slots extending respectively in two different radial directions of the wafer. Two positioning members respectively and radially correspond in position to the slots, and abut against an outer rim of the wafer.

Abstract: A wafer processing method uses a chuck table with smaller diameter than a semiconductor wafer to be processed. A cut through edge trimming is therefore implemented on the periphery of the semiconductor wafer to form a cut through straight side at the periphery and also form a flat portion at the periphery as a positioning means for taping and backside grind processes.

Abstract: A laser color marking method for a semiconductor package has steps of: (a) providing a semiconductor element; (b) sputtering a metal layer on the semiconductor element; (c) obtaining a marking pattern; and (d) applying a laser light source on the marking region to form a mark according to the marking pattern. The mark is consisted of an optical oxide film converting ambient light to a corresponding color light, so a visible color mark is marked. Therefore, the present invention easily laser-marks the visible color mark on the semiconductor package.

Abstract: A PU foam rubber fluid applicator includes a handle, the handle having a receptacle adapted to accommodate a PU foam rubber can, a nozzle connected to the valve tube of the loaded PU foam rubber can, a lever pivoted to the receptacle and supported on a return spring and controlled by one finger of the user's hand holding the handle to lift the nozzle and to further open the valve tube of the PU foam rubber can, and a retaining block pivoted to the receptacle and forced by a spring member to lock the PU foam rubber can.

Abstract: A method of fabricating word-line spacers comprising the following steps. A substrate having an inchoate split-gate flash memory structure formed thereover is provided. A conductive layer is formed over the substrate and the inchoate split-gate flash memory structure. The conductive layer having: a upper portion and lower vertical portions over the inchoate split-gate flash memory structure; and lower horizontal portions over the substrate. A dual-thickness oxide layer is formed over the conductive layer and has a greater thickness over the upper portion of the conductive layer. The oxide layer is partially etched back to remove at least the oxide layer from over the lower horizontal portions of the conductive layer to expose the underlying portions of the conductive layer.

Abstract: A process for intermetal SOG/SOP dielectric planarization without having effect is described. First, a silicon-rich oxide (SRO) layer is formed on a substrate surface. Next, a metal layer and an antireflective coating (ARC) layer are sequentially deposited over the SRO layer. The metal layer and ARC layer are then etched to define metal patterns by the conventional lithography and etching techniques. Next, an Ozone-TEOS (O.sub.3 -TEOS) layer and a SOG layer are then formed over the entire substrate surface. Next, the O.sub.3 -TEOS layer and SOG layer are subjected to etching back treatment to obtain a planar substrate surface which only has a small portion of the O.sub.3 -TEOS layer covered on the substrate surface. The etching back treatment can be PEB, TEB or CMP techniques. Finally, a passivation layer is deposited over the remaining of O.sub.3 -TEOS layer.