Abstract: A 3D printed thermal expansion structure includes a thermoplastic material and a thermal expansion material, wherein the thermoplastic material is in a range from 50 to 90 wt % based on a weight of the 3D printed thermal expansion structure, and the thermal expansion material is in a range from 10 to 50 wt % based on the weight of the 3D printed thermal expansion structure. The thermoplastic material and the thermal expansion material are mixed to form a mixed material, and the mixed material is utilized by a 3D printing apparatus to form a solid object, and the solid object is heated to form the 3D printed thermal expansion structure. A manufacturing method of a 3D printed thermal expansion structure is provided herein.

Abstract: A molding thermal expansion structure includes a thermoplastic material and a thermal expansion material, wherein the thermoplastic material is 50 wt % to 90 wt % based on a weight of the molding thermal expansion structure; the thermal expansion material is 50 wt % to 10 wt % based on a weight of the molding thermal expansion structure; wherein, the thermal expansion material is expanded from a foaming original material through a pre-foaming process; the thermoplastic material and the thermal expansion material are mixed to form a mixed material; the mixed material is thermally expanded to form a thermal expansion structure in a molding apparatus. The molding thermal expansion structure provided in the present invention could satisfy various needs of light-weighted products. A molding method of the thermal expansion structure is also provided herein.

Abstract: A 3D printed thermal expansion structure includes a thermoplastic material and a thermal expansion material, wherein the thermoplastic material is in a range from 50 to 90 wt % based on a weight of the 3D printed thermal expansion structure, and the thermal expansion material is in a range from 10 to 50 wt % based on the weight of the 3D printed thermal expansion structure. The thermoplastic material and the thermal expansion material are mixed to form a mixed material, and the mixed material is utilized by a 3D printing apparatus to form a solid object, and the solid object is heated to form the 3D printed thermal expansion structure in a manufacturing method of a 3D printed thermal expansion structure provided herein.

Abstract: A method of manufacturing an article of sport gear, the method comprising: providing a first component; making a second component by: (i) applying heat to expand polymeric microspheres each comprising a polymeric shell and a fluid encapsulated in the polymeric shell to produce a core of polymeric cellular material that comprises a first side and a second side opposite one another and a body of expanded polymeric microspheres; (ii) molding a covering onto the core of polymeric cellular material such that the covering covers at least part of the first side and at least part of the second side of the core of polymeric cellular material; and mounting the second component to the first component.

Abstract: A sport helmet for protecting a head of a wearer, such as a hockey, lacrosse or football player. The sport helmet includes an outer shell with an internal side and an external side and an inner pad mounted to the internal side of the outer shell for absorbing shocks when the sport helmet is impacted. The inner pad includes a core of polymeric cellular material with a body of expanded polymeric microspheres and a molded covering being molded onto the core of polymeric cellular material.

Abstract: A sport helmet for protecting a head of a wearer, such as a hockey, lacrosse or football player. The sport helmet has an outer shell with an internal side and an external side and an inner pad mounted to the internal side of the outer shell for absorbing shocks when the sport helmet is impacted. The inner pad has a core of polymeric cellular material with a body of expanded polymeric microspheres and a molded covering being molded onto the core of polymeric cellular material.

Abstract: A sport helmet for protecting a head of a wearer, such as a hockey, lacrosse or football player. The sport helmet comprises an outer shell comprising an internal side and an external side. The sport helmet also comprises an inner pad mounted to the internal side of the outer shell for absorbing shocks when the sport helmet is impacted. The inner pad comprises a core of polymeric cellular material and a covering on the core of polymeric cellular material. The core of polymeric cellular material may comprise a body of expanded polymeric microspheres.

Abstract: The present disclosure provides a semiconductor device and methods of making wherein the semiconductor device has strained asymmetric source and drain regions. A method of fabricating the semiconductor device includes receiving a substrate and forming a poly gate stack on the substrate. A dopant is implanted in the substrate at an implant angle ranging from about 10° to about 25° from perpendicular to the substrate. A spacer is formed adjacent the poly gate stack on the substrate. A source region and a drain region are etched in the substrate. A strained source layer and a strained drain layer are respectively deposited into the etched source and drain regions in the substrate, such that the source region and the drain region are asymmetric with respect to the poly gate stack. The poly gate stack is removed from the substrate and a high-k metal gate is formed using a gate-last process where the poly gate stack was removed.

Abstract: The present disclosure provides a semiconductor device and methods of making wherein the semiconductor device has strained asymmetric source and drain regions. A method of fabricating the semiconductor device includes receiving a substrate and forming a poly gate stack on the substrate. A dopant is implanted in the substrate at an implant angle ranging from about 10° to about 25° from perpendicular to the substrate. A spacer is formed adjacent the poly gate stack on the substrate. A source region and a drain region are etched in the substrate. A strained source layer and a strained drain layer are respectively deposited into the etched source and drain regions in the substrate, such that the source region and the drain region are asymmetric with respect to the poly gate stack. The poly gate stack is removed from the substrate and a high-k metal gate is formed using a gate-last process where the poly gate stack was removed.

Abstract: The present disclosure provides a semiconductor device and methods of making wherein the semiconductor device has strained asymmetric source and drain regions. A method of fabricating the semiconductor device includes providing a substrate and forming a poly gate stack on the substrate. A dopant is implanted in the substrate at an implant angle ranging from about 10° to about 25° from perpendicular to the substrate. A spacer is formed adjacent the poly gate stack on the substrate. A source region and a drain region are etched in the substrate. A strained source layer and a strained drain layer are respectively deposited into the etched source and drain regions in the substrate, such that the source region and the drain region are asymmetric with respect to the poly gate stack. The poly gate stack is removed from the substrate and a high-k metal gate is formed using a gate-last process where the poly gate stack was removed.

Abstract: A method for controlling IC device strain and the devices thereby formed are disclosed. An exemplary embodiment includes receiving an IC device substrate having a device region corresponding to an IC device. An implantation process is performed on the device region forming an amorphous region within the device region. The IC device substrate is recessed to define a source/drain recess in the device region having a profile determined by the amorphous structure of the amorphous region. A source/drain epitaxy is then performed to form a source/drain structure within the source/drain recess.

Abstract: A method for controlling IC device strain and the devices thereby formed are disclosed. An exemplary embodiment includes receiving an IC device substrate having a device region corresponding to an IC device. An implantation process is performed on the device region forming an amorphous region within the device region. The IC device substrate is recessed to define a source/drain recess in the device region having a profile determined by the amorphous structure of the amorphous region. A source/drain epitaxy is then performed to form a source/drain structure within the source/drain recess.

Abstract: A sport helmet for protecting a head of a wearer, such as a hockey, lacrosse or football player. The sport helmet comprises an outer shell comprising an internal side and an external side. The sport helmet also comprises an inner pad mounted to the internal side of the outer shell for absorbing shocks when the sport helmet is impacted. The inner pad comprises a core of polymeric cellular material and a covering on the core of polymeric cellular material. The core of polymeric cellular material may comprise a body of expanded polymeric microspheres.

Abstract: The present disclosure provides a semiconductor device and methods of making wherein the semiconductor device has strained asymmetric source and drain regions. A method of fabricating the semiconductor device includes providing a substrate and forming a poly gate stack on the substrate. A dopant is implanted in the substrate at an implant angle ranging from about 10° to about 25° from perpendicular to the substrate. A spacer is formed adjacent the poly gate stack on the substrate. A source region and a drain region are etched in the substrate. A strained source layer and a strained drain layer are respectively deposited into the etched source and drain regions in the substrate, such that the source region and the drain region are asymmetric with respect to the poly gate stack. The poly gate stack is removed from the substrate and a high-k metal gate is formed using a gate-last process where the poly gate stack was removed.

Abstract: A method for controlling IC device strain and the devices thereby formed are disclosed. An exemplary embodiment includes receiving an IC device substrate having a device region corresponding to an IC device. An implantation process is performed on the device region forming an amorphous region within the device region. The IC device substrate is recessed to define a source/drain recess in the device region having a profile determined by the amorphous structure of the amorphous region. A source/drain epitaxy is then performed to form a source/drain structure within the source/drain recess.