Patents by Inventor Chin-Tung Niao

Chin-Tung Niao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a silicon nitride layer
    Patent number: 7229502
    Abstract: A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is positioned between the outer tube and the wafer boat. Similarly, the uniform gas injection apparatus is positioned between the outer tube and the wafer boat. Gas injected into the uniform gas injection apparatus is uniformly distributed throughout the entire deposition furnace. To form a silicon nitride layer on each wafer, a silicon-containing gas is passed into the deposition furnace via the gas injector and a nitrogen-mixed carrier gas is passed into the deposition furnace via the uniform gas injection apparatus.
    Type: Grant
    Filed: June 24, 2004
    Date of Patent: June 12, 2007
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Ching-Tang Wang, Chin-Tung Niao, Keng-Hui Su, Huang-Sheng Chiu, Min-Hsin Wang
  • [METHOD OF FORMING A SILICON NITRIDE LAYER]
    Publication number: 20050266696
    Abstract: A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is positioned between the outer tube and the wafer boat. Similarly, the uniform gas injection apparatus is positioned between the outer tube and the wafer boat. Gas injected into the uniform gas injection apparatus is uniformly distributed throughout the entire deposition furnace. To form a silicon nitride layer on each wafer, a silicon-containing gas is passed into the deposition furnace via the gas injector and a nitrogen-mixed carrier gas is passed into the deposition furnace via the uniform gas injection apparatus.
    Type: Application
    Filed: June 24, 2004
    Publication date: December 1, 2005
    Inventors: Ching-Tang Wang, Chin-Tung Niao, Keng-Hui Su, Huang-Sheng Chiu, Min-Hsin Wang