Abstract: The method of forming a void-free surface on aluminum-copper metallurgy after stripping of resist is described. There is provided an aluminum-copper metallurgy on a suitable substrate, such as a semiconductor integrated circuit wafer during manufacture. A resist layer is formed over surface. The resist layer is exposing, developing and the developed resist is used as an etch mask to etch a layer, such as an insulating layer on the metallurgy which results in exposing the aluminum-copper metallurgy surface. The resist etch mask is removed by plasma oxygen ashing in presence of the exposed aluminum-copper surface. Rapid thermal annealing of the aluminum-copper metallurgy at a temperature of between about 400.degree. to 550.degree. C. is performed. The resulting surfaces are rinsed to remove any residual resist material. The result is a void-free aluminum-copper metallurgy surface.