Patents by Inventor Chin-Wen Chen

Chin-Wen Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11654461
    Abstract: A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: May 23, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Jen Hsiao, Ya-Ping Chen, Chien-Hung Lin, Wen-Pin Liu, Chin-Wen Chen
  • Publication number: 20210268555
    Abstract: A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.
    Type: Application
    Filed: May 21, 2021
    Publication date: September 2, 2021
    Inventors: Chun-Jen HSIAO, Ya-Ping CHEN, Chien-Hung LIN, Wen-Pin LIU, Chin-Wen CHEN
  • Patent number: 11020778
    Abstract: A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.
    Type: Grant
    Filed: July 4, 2019
    Date of Patent: June 1, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Jen Hsiao, Ya-Ping Chen, Chien-Hung Lin, Wen-Pin Liu, Chin-Wen Chen
  • Patent number: 10851206
    Abstract: A modified nylon 66 fiber including a first repeating unit derived from adipic acid and hexamethylenediamine, a second monomer unit derived from a diacid or a diamine having a long carbon chain, a third monomer unit derived from a diacid or a diamine having a aromatic ring, and a fourth monomer unit derived from a cyclic diacid or a cyclic diamine is provided. The second monomer unit has 6 to 36 carbon atoms. The third monomer unit has 8 to 14 carbon atoms. The fourth monomer unit has 6 to 10 carbon atoms. Based on a total weight of the modified nylon 66 fiber, a content of the first repeating unit is 78 wt % to 94.8 wt %, a content of the second monomer unit is 0.1 wt % to 1 wt %, a content of the third monomer unit is 5 wt % to 20 wt %, a content of the fourth monomer unit is 0.1 wt % to 1 wt %.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: December 1, 2020
    Assignee: Taiwan Textile Research Institute
    Inventors: Tzu-Chung Lu, Chin-Wen Chen, Wei-Hsiang Lin, Chao-Huei Liu, Po-Hsun Huang, Wei-Jen Lai
  • Publication number: 20200016635
    Abstract: A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.
    Type: Application
    Filed: July 4, 2019
    Publication date: January 16, 2020
    Inventors: Chun-Jen HSIAO, Ya-Ping CHEN, Chien-Hung LIN, Wen-Pin LIU, Chin-Wen CHEN
  • Publication number: 20190185623
    Abstract: A modified nylon 66 fiber including a first monomer derived from adipic acid and hexamethylenediamine, a second monomer derived from a diacid or a diamine having a long carbon chain, a third monomer derived from a diacid or a diamine having a aromatic ring, and a fourth monomer derived from a cyclic diacid or a cyclic diamine is provided. The second monomer has 6 to 36 carbon atoms. The third monomer has 8 to 14 carbon atoms. The fourth monomer has 6 to 10 carbon atoms. Based on a total weight of the modified nylon 66 fiber, a content of the first monomer is 78 wt % to 94.8 wt %, a content of the second monomer is 0.1 wt % to 1 wt %, a content of the third monomer is 5 wt % to 20 wt %, a content of the fourth monomer is 0.1 wt % to 1 wt %.
    Type: Application
    Filed: December 6, 2018
    Publication date: June 20, 2019
    Applicant: Taiwan Textile Research Institute
    Inventors: Tzu-Chung Lu, Chin-Wen Chen, Wei-Hsiang Lin, Chao-Huei Liu, Po-Hsun Huang, Wei-Jen Lai
  • Publication number: 20150368395
    Abstract: Disclosed herein are processes for manufacturing modified polyesters. An esterification reaction of diacid, diol and a branching agent having at least three carboxyl groups is carried out at a temperature of about 180 to 300° C. and a pressure of about 1 to 4 bar to obtain a product of esterification. A polycondensation reaction of the product of esterification and a diamine is carried out at a pressure below about 0.01 bars to obtain the modified polyester.
    Type: Application
    Filed: September 1, 2015
    Publication date: December 24, 2015
    Inventors: Wei-Hung Chen, Tai-You Chen, Pao-Chi Chen, Chin-Wen Chen, Syang-Peng Rwei
  • Patent number: 9156943
    Abstract: A process for manufacturing a modified polyester, comprising the steps of: obtain a esterification product of diacid, diol, and a branching agent having at least three carboxyl groups , wherein the branching agent is present in an amount of up to 1 mol %, and carrying out a polycondensation reaction of the esterification product and a diamine to obtain the modified polyester, wherein the diamine is present in an amount of about 0.07 to about 0.22 mol %, the diacid comprises a combination of at least one aliphatic diacid and at least one aromatic diacid which is present in an amount no greater than about 10 mol % based upon the total moles of the diacid and the diol. The modified polyester is a thermally induced shape-memory material having an activation temperature of about 40 to 99° C., a percent elongation at break of about 29.9 % to 40.9% and bending modulus of about 40.3 MPa to about 20.1 Mpa.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: October 13, 2015
    Assignee: TAIWAN TEXTILE RESEARCH INSTITUTE
    Inventors: Wei-Hung Chen, Tai-You Chen, Pao-Chi Chen, Chin-Wen Chen, Syang-Peng Rwei
  • Patent number: 9087628
    Abstract: A carbon black-containing polyamide masterbatch composition is provided. The carbon black-containing polyamide masterbatch composition includes a polyamide compounded with an admixture of carbon black and a water-soluble polyamide. The water-soluble polyamide is a copolymer of caprolactam, ethylene glycol bis(2-aminoethyl)ether or ethylene glycol bis(3-aminopropyl)ether, and 5-sulfoisophthalic acid monosodium salt.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: July 21, 2015
    Assignee: TAIWAN TEXTILE RESEARCH INSTITUTE
    Inventors: Yu-Chi Tseng, Chin-Wen Chen, Syang-Peng Rwei
  • Publication number: 20130330535
    Abstract: A carbon black-containing polyamide masterbatch composition is provided. The carbon black-containing polyamide masterbatch composition includes a polyamide compounded with an admixture of carbon black and a water-soluble polyamide. The water-soluble polyamide is a copolymer of caprolactam, ethylene glycol bis(2-aminoethyl)ether or ethylene glycol bis(3-aminopropyl)ether, and 5-sulfoisophthalic acid monosodium salt.
    Type: Application
    Filed: August 15, 2013
    Publication date: December 12, 2013
    Applicant: TAIWAN TEXTILE RESEARCH INSTITUTE
    Inventors: Yu-Chi TSENG, Chin-Wen Chen, Syang-Peng Rwei
  • Publication number: 20130298333
    Abstract: A balance pillow includes a body having a wave-shaped top surface and a first protrusion and a second protrusion transversely protrude from the top surface. A recessed area is defined between the first and second protrusions, and the first protrusion is higher than the second protrusion. The first protrusion has an inner recessed area which is shaped to be correspondent to the curvature of a user's neck. A circular recess is defined between the first and second protrusions and the recessed area. The circular recess is shaped to be correspondent to the curvature of a user's head. An inner recess is defined in the inner end of the circular recess and smaller than an occipital of a skull. The balance pillow supports evenly occipital which is engaged with the inner recess.
    Type: Application
    Filed: May 14, 2012
    Publication date: November 14, 2013
    Inventor: Chin-Wen CHEN
  • Patent number: 8541539
    Abstract: A method for preparing a water-soluble polyamide, includes copolymerizing reactive monomers including caprolactam; ethylene glycol bis(2-aminoethyl)ether or ethylene glycol bis(3-aminopropyl)ether; and 5-sulfoisophthalic acid monosodium salt, wherein a molar ratio of caprolactam:ethylene glycol bis(2-aminoethyl)ether or ethylene glycol bis(3 -aminopropyl)ether:5-sulfoisophthalic acid monosodium salt is about 0:1:1 to about 5:1:1, advantageously about 1.85:1:1. Copolymerizing takes place at a copolymerization temperature of about 222-250° C. and a copolymerization pressure of about 3 Bar. The method further includes maintaining a temperature of about 222-250° C. for about 2-3 hours under normal pressure after the copolymerization step. The water-soluble polyamide has a solubility in water of about 10-70%.
    Type: Grant
    Filed: December 29, 2008
    Date of Patent: September 24, 2013
    Assignee: Taiwan Textile Research Institute
    Inventors: Yu-Chi Tseng, Chin-Wen Chen, S-P Rwei
  • Publication number: 20120277400
    Abstract: Disclosed herein are processes for manufacturing modified polyesters. An esterification reaction of diacid, diol and a branching agent having at least three carboxyl groups is carried out at a temperature of about 180 to 300° C. and a pressure of about 1 to 4 bar to obtain a product of esterification. A polycondensation reaction of the product of esterification and a diamine is carried out at a pressure below about 0.01 bars to obtain the modified polyester.
    Type: Application
    Filed: April 26, 2011
    Publication date: November 1, 2012
    Applicant: TAIWAN TEXTILE RESEARCH INSTITUTE
    Inventors: Wei-Hung Chen, Tai-You Chen, Pao-Chi Chen, Chin-Wen Chen, Syang-Peng Rwei
  • Publication number: 20100152328
    Abstract: A carbon black-containing polyamide masterbatch composition is provided. The carbon black-containing polyamide masterbatch composition includes a polyamide compounded with an admixture of carbon black and a water-soluble polyamide. The water-soluble polyamide is a copolymer of caprolactam, ethylene glycol bis(2-aminoethyl)ether or ethylene glycol bis(3-aminopropyl)ether, and 5-sulfoisophthalic acid monosodium salt.
    Type: Application
    Filed: December 29, 2008
    Publication date: June 17, 2010
    Applicant: TAIWAN TEXTILE RESEARCH INSTITUTE
    Inventors: Yu-Chi TSENG, Chin-Wen Chen, S-P Rwei
  • Publication number: 20100152409
    Abstract: Triptycene derivatives and method for preparing the same are provided. The triptycene derivatives may be triptycene di-ester of the formula (I) or triptycene di-acid of the formula (II): where n=1-5.
    Type: Application
    Filed: December 29, 2008
    Publication date: June 17, 2010
    Applicant: TAIWAN TEXTILE RESEARCH INSTITUTE
    Inventors: Chin-Wen Chen, I-Pin Fu, Yu-Chi Tseng, Jye-Shane Yang, Jyu-Lun Yan
  • Patent number: 4909963
    Abstract: Described are photochromic spiro(indoline)benzoxazine compounds having substituents on the benzoxazine portion of the compound, and their use in plastic hosts to impart a photochromic response thereto.
    Type: Grant
    Filed: December 6, 1988
    Date of Patent: March 20, 1990
    Assignee: PPG Industries, Inc.
    Inventors: Won S. Kwak, Chin-Wen Chen
  • Patent number: 4816584
    Abstract: Described are photochromic spiro(indoline)benzoxazine compounds having substituents on the benzoxazine portion of the compound, and their use in plastic hosts to impart a photochromic response thereto.
    Type: Grant
    Filed: July 23, 1987
    Date of Patent: March 28, 1989
    Assignee: PPG Industries, Inc.
    Inventors: Won S. Kwak, Chin-Wen Chen