Abstract: Provided is an etching method. The etching method includes loading a substrate into a process chamber, wherein the process chamber includes a first chamber part and a second chamber part, and the substrate is loaded into the second chamber part, supplying high-density gas plasma to the first chamber part, supplying ultra-low electron temperature plasma to the second chamber part using at least a portion of the high-density gas plasma, adsorbing radicals of the ultra-low electron temperature plasma to a surface of the substrate, and applying a bias to the substrate to accelerate at least one of ions or electrons of the ultra-low electron temperature plasma so as to collide with the substrate.

Abstract: The present invention relates to a substrate processing apparatus and a substrate processing method. A substrate processing apparatus according to an embodiment of the present invention includes a chamber; a susceptor located inside the chamber to support a substrate to be processed; a first plasma control plate located in an upper area of a space inside the chamber; a second plasma control plate located below the first plasma control plate while being spaced apart from the first plasma control plate by a predetermined distance; and a plasma control power source connected to the first plasma control plate and the second plasma control plate.

Abstract: The present invention relates to a substrate treating apparatus. According to one embodiment of the present invention, a substrate treating apparatus comprises: a chamber; a susceptor located at an inner side of the chamber to support a substrate subject to a process; an electrode plate having a pre-set area and located at an upper area inside the chamber; an RF power supply providing power for plasma generation and connected to the susceptor; and a plasma control member located on a branched conducting wire branching from a conducting wire, through which the RF power supply is connected to the susceptor, and grounded.

Abstract: A transmitter for transmitting wireless power and a wireless power transmitting system having the same in the present invention includes at least one helical or spiral type coil in which one end thereof is in a grounded state and the other end is in the air, wherein the coil wirelessly transmits the power by resonance. The present invention has simpler structure and operates with low frequencies as compared with the existing wireless power transmitting scheme using magnetic resonance, thereby to enhance the efficiency of the power transfer, to reduce the cost for system building, and to easily implement a transmitting section with the multi-channel.

Abstract: To diagnose plasma in a plasma space, a plurality of floating probes are installed at a plurality of points, respectively, in a plasma space. An electron density ratio at each of the points is calculated by measuring a first probe current of each of the floating probes, the probe current including a DC component. A point ion density and a point electron temperature at each of the points are calculated by measuring a second probe current of each of the floating probes before the electron density ratio is calculated, the second probe current excluding the DC component.

Abstract: A spray pump is provided where two seal caps are arranged in an upper portion and a lower portion within a cylinder housing so as to prevent the contents from leaking, the cylinder housing a wall surface with one or more leakage discharge holes so that the content which can be accumulated within the cylinder housing is discharged through the leakage discharge holes rather than a content flow path, thereby enabling an efficient operation.

Abstract: There is provided plasma equipment including a power supply that supplies a RF power; a chamber in which plasma is generated, and a processing target to processed by the plasma is provided; an antenna coil that is provided on a top surface of the chamber, and is connected to the power supply to receive the RF power; and a resonance coil that is provided to be electrically insulated or cut off from the antenna coil. The resonance coil receives electromagnetic energy applied from the antenna coil to allow a current to flow, and the plasma is generated within the chamber. It is possible to increase the degree of freedom for an installation position of the resonance coil, and it is possible to increase plasma density.

Abstract: There is provided plasma equipment including a power supply that supplies a RF power; a chamber in which plasma is generated, and a processing target to processed by the plasma is provided; an antenna coil that is provided on a top surface of the chamber, and is connected to the power supply to receive the RF power; and a resonance coil that is provided to be electrically insulated or cut off from the antenna coil. The resonance coil receives electromagnetic energy applied from the antenna coil to allow a current to flow, and the plasma is generated within the chamber. It is possible to increase the degree of freedom for an installation position of the resonance coil, and it is possible to increase plasma density.

Abstract: A transmitter for transmitting wireless power and a wireless power transmitting system having the same in the present invention includes at least one helical or spiral type coil in which one end thereof is in a grounded state and the other end is in the air, wherein the coil wirelessly transmits the power by resonance. The present invention has simpler structure and operates with low frequencies as compared with the existing wireless power transmitting scheme using magnetic resonance, thereby to enhance the efficiency of the power transfer, to reduce the cost for system building, and to easily implement a transmitting section with the multi-channel.

Abstract: To diagnose plasma in a plasma space, a plurality of floating probes are installed at a plurality of points, respectively, in a plasma space. An electron density ratio at each of the points is calculated by measuring a first probe current of each of the floating probes, the probe current including a DC component. A point ion density and a point electron temperature at each of the points are calculated by measuring a second probe current of each of the floating probes before the electron density ratio is calculated, the second probe current excluding the DC component.

Abstract: A spray pump is provided where two seal caps are arranged in an upper portion and a lower portion within a cylinder housing so as to prevent the contents from leaking, the cylinder housing a wall surface with one or more leakage discharge holes so that the content which can be accumulated within the cylinder housing is discharged through the leakage discharge holes rather than a content flow path, thereby enabling an efficient operation.

Abstract: Provided are a plasma chamber and a substrate treating apparatus. The plasma chamber includes a housing in which a gas is injected to generate plasma, a first coil disposed on one surface of the housing, and a second coil disposed on the other surface of the housing.

Abstract: A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.

Abstract: Provided is an apparatus for generating remote plasma, which can improve thin-film quality by preventing an arc at a bias electrode. The apparatus includes a radio frequency (RF) electrode installed inside an upper portion of a chamber, a bias electrode installed apart from the RF electrode, and including a plurality of through holes through which plasma passes, wherein a bias power is supplied to the bias electrode, a plasma generating unit formed between the RF electrode and the bias electrode, wherein a plasma gas is supplied to the plasma generating unit, and a ground electrode installed under and spaced apart from the bias electrode, and including plasma through holes corresponding to the through holes of the bias electrode, wherein a pulsed DC bias of a second voltage level, which has a first voltage level periodically, is applied to the bias electrode.

Abstract: Provided are a process monitoring apparatus and method. The process monitoring apparatus includes a process chamber in which a process is performed, a probe assembly disposed on the process chamber, and comprising a probe electrode, a plasma generator generating plasma around the probe assembly, and a drive processor applying an alternating current (AC) voltage having at least 2 fundamental frequencies to the probe assembly, and extracting process monitoring parameters.

Abstract: Provided is an apparatus for generating remote plasma, which can improve thin-film quality by preventing an arc at a bias electrode. The apparatus includes a radio frequency (RF) electrode installed inside an upper portion of a chamber, a bias electrode installed apart from the RF electrode, and including a plurality of through holes through which plasma passes, wherein a bias power is supplied to the bias electrode, a plasma generating unit formed between the RF electrode and the bias electrode, wherein a plasma gas is supplied to the plasma generating unit, and a ground electrode installed under and spaced apart from the bias electrode, and including plasma through holes corresponding to the through holes of the bias electrode, wherein a pulsed DC bias of a second voltage level, which has a first voltage level periodically, is applied to the bias electrode.

Abstract: Provided is a plasma diagnostic apparatus having a probe unit, which is inserted into a plasma or disposed at boundary of a plasma, the apparatus including: a signal supplying unit having a signal supplying source; a current detecting/voltage converting unit for applying a periodic voltage signal applied from the signal supplying unit to the probe unit, detecting the magnitude of the current flowing through the probe unit, and converting the detected current into a voltage; and a by-frequency measurement unit for computing the magnitude and phase of individual frequency components of the current flowing through the probe unit by receiving the voltage output from the current detecting/voltage converting unit as an input.

Abstract: Provided is a plasma diagnostic apparatus includes a probe unit, which is inserted into a plasma or disposed at boundary of a plasma, the apparatus includes: a signal supplying unit having a signal supplying source; a current detecting/voltage converting unit for applying a periodic voltage signal applied from the signal supplying unit to the probe unit, detecting the magnitude of the current flowing through the probe unit, and converting the detected current into a voltage; and a by-frequency measurement unit for computing the magnitude and phase of individual frequency components of the current flowing through the probe unit by receiving the voltage output from the current detecting/voltage converting unit as an input.

Abstract: A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.

Abstract: Provided is an apparatus for generating remote plasma. The apparatus includes an RF antenna disposed in regard to a chamber, a plasma generating unit formed in an uppermost portion of the chamber, wherein a plurality of plasma generation gas introduction pipes are communicated with the plasma generating unit, a first shower head disposed below the plasma generating unit, and having a plurality of first plasma guide holes, a second shower head disposed below the first shower head, and having a plurality of source/purge gas guide holes and a plurality of second plasma guide holes directly connected to the respective first plasma guide holes, and a source/purge gas introduction unit disposed between the first and second shower heads, wherein a plurality of source/purge gas introduction pipes are uniformly communicated with the source/purge gas introduction unit.