Patents by Inventor Chin-Ya Yi

Chin-Ya Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SELF-ALIGNED UNSYMMETRICAL GATE (SAUG) FINFET AND METHODS OF FORMING THE SAME
    Publication number: 20210226059
    Abstract: Structures and methods of forming self-aligned unsymmetric gate (SAUG) FinFET are provided. The SAUG FinFET structure has two different gate structures on opposite sides of each fin: a programming gate structure and a switching gate structure. The SAUG FinFET may be used as non-volatile memory (NVM) storage element that may be electrically programmed by trapping charges in the charge trapping dielectric (e.g., Si3N4) with appropriate bias on the control gate of the programming gate structure. The stored data may be sensed by sensing the channel current through the SAUG FinFET in response to a bias on the switching gate of the switching gate structure.
    Type: Application
    Filed: April 5, 2021
    Publication date: July 22, 2021
    Inventors: Chao-Hsin Chien, Yu-Che Chou, Chien-Wei Tsai, Chin-Ya Yi
  • Self-aligned unsymmetrical gate (SAUG) FinFET and methods of forming the same
    Patent number: 10971629
    Abstract: Structures and methods of forming self-aligned unsymmetric gate (SAUG) FinFET are provided. The SAUG FinFET structure has two different gate structures on opposite sides of each fin: a programming gate structure and a switching gate structure. The SAUG FinFET may be used as non-volatile memory (NVM) storage element that may be electrically programmed by trapping charges in the charge trapping dielectric (e.g., Si3N4) with appropriate bias on the control gate of the programming gate structure. The stored data may be sensed by sensing the channel current through the SAUG FinFET in response to a bias on the switching gate of the switching gate structure.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: April 6, 2021
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung University
    Inventors: Chao-Hsin Chien, Yu-Che Chou, Chien-Wei Tsai, Chin-Ya Yi
  • SELF-ALIGNED UNSYMMETRICAL GATE (SAUG) FINFET AND METHODS OF FORMING THE SAME
    Publication number: 20200006566
    Abstract: Structures and methods of forming self-aligned unsymmetric gate (SAUG) FinFET are provided. The SAUG FinFET structure has two different gate structures on opposite sides of each fin: a programming gate structure and a switching gate structure. The SAUG FinFET may be used as non-volatile memory (NVM) storage element that may be electrically programmed by trapping charges in the charge trapping dielectric (e.g., Si3N4) with appropriate bias on the control gate of the programming gate structure. The stored data may be sensed by sensing the channel current through the SAUG FinFET in response to a bias on the switching gate of the switching gate structure.
    Type: Application
    Filed: April 3, 2019
    Publication date: January 2, 2020
    Inventors: Chao-Hsin Chien, Yu-Che Chou, Chien-Wei Tsai, Chin-Ya Yi