Abstract: A dielectric window for a process chamber is provided. The dielectric window includes a disc-shaped body consisting of a first dielectric material having a first dielectric constant. An annular portion consisting of a second dielectric material having a second dielectric constant greater than the first dielectric constant is seated in the disc-shaped body. The dielectric window has a substantially constant thickness over a process region of the process chamber. The process region is an interior region of the process chamber in which a plasma is generated during processing of a substrate in the process chamber. The seating of the annular portion in the disc-shaped body is configured to maintain the substantially constant thickness of the dielectric window.

Abstract: An insulator-type substrate is positioned on a support surface of a substrate support structure in exposure to a plasma. An initial clamping voltage is applied to an electrode within the substrate support structure to rapidly accumulate electrical charge on the support surface to hold the substrate. A backside cooling gas is flowed to a region between the substrate and the support surface, and a leak rate of the backside cooling gas is monitored. A steady clamping voltage is applied to the electrode, and the steady clamping voltage is adjusted in a step-wise manner to maintain the monitored leak rate of the backside cooling gas at just less than a maximum allowable leak rate. Or, a pulsed clamping voltage is applied to the electrode, and the pulsed clamping voltage is adjusted to maintain the monitored leak rate of the backside cooling gas at just less than the maximum allowable leak rate.

Abstract: A system is disclosed for measuring an impedance of a plasma processing chamber. The system includes a radiofrequency signal generator configured to output a radiofrequency signal based on a frequency setpoint and provide an indication of an actual frequency of the radiofrequency signal, where the actual frequency can be different than the frequency setpoint. The system includes an impedance control module including at least one variable impedance control device. A difference between the actual frequency of the radiofrequency signal as output by the radiofrequency signal generator and the frequency setpoint is partially dependent upon a setting of the at least one variable impedance control device and is partially dependent upon the impedance of the plasma processing chamber. The system includes a connector configured to connect with a radiofrequency signal supply line of the plasma processing chamber. The impedance control module is connected between the radiofrequency signal generator and the connector.

Abstract: An insulator-type substrate is positioned on a support surface of a substrate support structure in exposure to a plasma. An initial clamping voltage is applied to an electrode within the substrate support structure to rapidly accumulate electrical charge on the support surface to hold the substrate. A backside cooling gas is flowed to a region between the substrate and the support surface, and a leak rate of the backside cooling gas is monitored. A steady clamping voltage is applied to the electrode, and the steady clamping voltage is adjusted in a step-wise manner to maintain the monitored leak rate of the backside cooling gas at just less than a maximum allowable leak rate. Or, a pulsed clamping voltage is applied to the electrode, and the pulsed clamping voltage is adjusted to maintain the monitored leak rate of the backside cooling gas at just less than the maximum allowable leak rate.

Abstract: A system is disclosed for measuring an impedance of a plasma processing chamber. The system includes a radiofrequency signal generator configured to output a radiofrequency signal based on a frequency setpoint and provide an indication of an actual frequency of the radiofrequency signal, where the actual frequency can be different than the frequency setpoint. The system includes an impedance control module including at least one variable impedance control device. A difference between the actual frequency of the radiofrequency signal as output by the radiofrequency signal generator and the frequency setpoint is partially dependent upon a setting of the at least one variable impedance control device and is partially dependent upon the impedance of the plasma processing chamber. The system includes a connector configured to connect with a radiofrequency signal supply line of the plasma processing chamber. The impedance control module is connected between the radiofrequency signal generator and the connector.

Abstract: In accordance with this disclosure, there are provided several inventions, including a substrate processing apparatus with multi-layer surfaces configured to face the plasma and resist against corrosion. These multi-layer surfaces may in one example include a base layer of aluminum, anodized aluminum, or quartz, a second layer of stabilized zirconia, and a second layer of a yttrium-aluminum composite such as yttrium aluminum garnet (YAG).

Abstract: In accordance with this disclosure, there are provided several inventions, including a substrate processing apparatus with multi-layer surfaces configured to face the plasma and resist against corrosion. These multi-layer surfaces may in one example include a base layer of aluminum, anodized aluminum, or quartz, a second layer of stabilized zirconia, and a second layer of a yttrium-aluminum composite such as yttrium aluminum garnet (YAG).