Patents by Inventor Chin-Yi Tseng

Chin-Yi Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9515258
    Abstract: A memory structure including an insulating layer, a first electrode layer and a first barrier is provided. The insulating layer has a recess. The first electrode layer is formed in the recess and has a first top surface. The first barrier is formed between the insulating layer and the first electrode layer, and has a second top surface lower than the first top surface. The first top surface and the second top surface are lower than an opening of the recess.
    Type: Grant
    Filed: June 3, 2015
    Date of Patent: December 6, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Yu-Yu Lin, Feng-Min Lee, Chien-Hung Lu, Chin-Yi Tseng
  • Publication number: 20160218284
    Abstract: A memory structure including an insulating layer, a first electrode layer and a first barrier is provided. The insulating layer has a recess. The first electrode layer is formed in the recess and has a first top surface. The first barrier is formed between the insulating layer and the first electrode layer, and has a second top surface lower than the first top surface. The first top surface and the second top surface are lower than an opening of the recess.
    Type: Application
    Filed: June 3, 2015
    Publication date: July 28, 2016
    Inventors: Yu-Yu Lin, Feng-Min Lee, Chien-Hung Lu, Chin-Yi Tseng
  • Patent number: D559650
    Type: Grant
    Filed: April 26, 2006
    Date of Patent: January 15, 2008
    Inventor: Chin-Yi Tseng