Abstract: The present invention relates to administration speed of obinutuzumab.

Abstract: A method includes: positioning a wafer in a first probe chamber of a first probe apparatus by a robot arm, the first probe apparatus being adjacent a transfer rail, the robot arm, in operation, moving along the transfer rail; testing the wafer by the first probe apparatus; following the testing, transferring the wafer to an environmental buffer attached to the first probe chamber; cooling the wafer in the environmental buffer; and following the cooling, transferring the wafer from the environmental buffer to a second probe chamber of a second probe apparatus by the robot arm, the second probe apparatus being adjacent the transfer rail and offset from the first probe apparatus.

Abstract: The present disclosure relates to administration speed of obinutuzumab.

Abstract: An image sensor includes a substrate, a grid, and a color filter. The grid is over the substrate. From a cross-sectional view, the grid includes a first grid and a second grid over the first grid, the first grid has lower portion that has a first sidewall and a second sidewall opposing the first sidewall, the second grid has a third sidewall and a fourth sidewall opposing the third sidewall, and a width between the third sidewall and the fourth sidewall is less than a width between the first sidewall and the second sidewall. The color filter extends through the grid structure.

Abstract: A connector clip is disclosed. The connector clip includes a base, a cover, a hinge coupling the cover and the base, and a fastener. The base has a first base side joined to a second base side via a connecting base side. The cover has a first cover side joined to a second cover side via a connecting cover side. The fastener holds the first base side and the first cover side in a fixed position when the connector clip is in a closed configuration in which the connecting base side is parallel to the connecting cover side. An internal cable opening is formed in part by the connecting base side and the connecting cover side when the connector clip is in the closed configuration. The connector clip secures a cable passing through the internal cable opening and connected to a board in its place in the closed configuration.

Abstract: A connector clip is disclosed. The connector clip includes a base, a cover, a hinge coupling the cover and the base, and a fastener. The base has a first base side joined to a second base side via a connecting base side. The cover has a first cover side joined to a second cover side via a connecting cover side. The fastener holds the first base side and the first cover side in a fixed position when the connector clip is in a closed configuration in which the connecting base side is parallel to the connecting cover side. An internal cable opening is formed in part by the connecting base side and the connecting cover side when the connector clip is in the closed configuration. The connector clip secures a cable passing through the internal cable opening and connected to a board in its place in the closed configuration.

Abstract: A method incudes forming a plurality of photodiodes in a substrate; forming an interconnect structure on a front-side of the substrate; forming a barrier layer on a back-side of the substrate; depositing a metal layer over the barrier layer; forming an adhesion enhancement layer over the metal layer; forming an oxide layer over the adhesion enhancement layer; etching the oxide layer, the adhesion enhancement layer, the metal layer, and the barrier layer to form an oxide grid, an adhesion enhancement grid, a metal grid, and a barrier grid, respectively, wherein the barrier grid and the adhesion enhancement grid have a same chemical element.

Abstract: The present disclosure relates to an oligopeptide. The oligopeptide includes an amino acid sequence. The amino acid sequence includes a binding motif, and the binding motif has a specific amino acid sequence. The present disclosure also relates to a testing kit including the oligopeptide and a medical composition including the oligopeptide.

Abstract: An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure includes a tungsten grid, an oxide grid over the tungsten grid, and an adhesion enhancement grid spacing the tungsten grid from the oxide grid.

Abstract: An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure includes a tungsten grid, an oxide grid over the tungsten grid, and an adhesion enhancement grid spacing the tungsten grid from the oxide grid.

Abstract: A time-interleaved noise-shaping successive-approximation analog-to-digital converter (TI NS-SAR ADC) is shown. A first successive-approximation channel has a first set of successive-approximation registers, and a first coarse comparator operative to coarsely adjust the first set of successive-approximation registers. A second successive-approximation channel has a second set of successive-approximation registers, and a second coarse comparator operative to coarsely adjust the second set of successive-approximation registers. A fine comparator is provided to finely adjust the first set of successive-approximation registers and the second set of successive-approximation registers alternately. A noise-shaping circuit is provided to sample residues of the first and second successive-approximation channels for the fine comparator to finely adjust the first and second sets of successive-approximation registers.

Abstract: A time-interleaved noise-shaping successive-approximation analog-to-digital converter (TI NS-SAR ADC) is shown. A first successive-approximation channel has a first set of successive-approximation registers, and a first coarse comparator operative to coarsely adjust the first set of successive-approximation registers. A second successive-approximation channel has a second set of successive-approximation registers, and a second coarse comparator operative to coarsely adjust the second set of successive-approximation registers. A fine comparator is provided to finely adjust the first set of successive-approximation registers and the second set of successive-approximation registers alternately. A noise-shaping circuit is provided to sample residues of the first and second successive-approximation channels for the fine comparator to finely adjust the first and second sets of successive-approximation registers.

Abstract: An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure includes a tungsten grid, an oxide grid over the tungsten grid, and an adhesion enhancement grid spacing the tungsten grid from the oxide grid.

Abstract: A time-interleaved noise-shaping successive-approximation analog-to-digital converter (TI NS-SAR ADC) is shown. A first successive-approximation channel has a first set of successive-approximation registers, and a first coarse comparator operative to coarsely adjust the first set of successive-approximation registers. A second successive-approximation channel has a second set of successive-approximation registers, and a second coarse comparator operative to coarsely adjust the second set of successive-approximation registers. A fine comparator is provided to finely adjust the first set of successive-approximation registers and the second set of successive-approximation registers alternately. A noise-shaping circuit is provided to sample residues of the first and second successive-approximation channels for the fine comparator to finely adjust the first and second sets of successive-approximation registers.

Abstract: A time-interleaved noise-shaping successive-approximation analog-to-digital converter (TI NS-SAR ADC) is shown. A first successive-approximation channel has a first set of successive-approximation registers, and a first coarse comparator operative to coarsely adjust the first set of successive-approximation registers. A second successive-approximation channel has a second set of successive-approximation registers, and a second coarse comparator operative to coarsely adjust the second set of successive-approximation registers. A fine comparator is provided to finely adjust the first set of successive-approximation registers and the second set of successive-approximation registers alternately. A noise-shaping circuit is provided to sample residues of the first and second successive-approximation channels for the fine comparator to finely adjust the first and second sets of successive-approximation registers.

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a metal catalyst layer on an etching area of the semiconductor substrate; performing a wet etch process to the semiconductor substrate to etch the etching area of the semiconductor substrate under the metal catalyst layer, thereby forming a trench in the semiconductor substrate; and removing the metal catalyst layer from the semiconductor substrate after performing the wet etch process.

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a metal catalyst layer on an etching area of the semiconductor substrate; performing a wet etch process to the semiconductor substrate to etch the etching area of the semiconductor substrate under the metal catalyst layer, thereby forming a trench in the semiconductor substrate; and removing the metal catalyst layer from the semiconductor substrate after performing the wet etch process.

Abstract: A noise-shaping successive approximation analog-to-digital converter (NS-SAR ADC) using a passive noise-shaping technique with 1-input-pair SAR comparator is introduced. A residue sampling and integration circuit is coupled between a DAC and the comparator, for sampling a residue voltage generated by the DAC and charge-sharing of the sampled residue voltage. A first integral capacitor is coupled between a first input terminal of a comparator and a first output terminal of a DAC. After a first residue capacitor samples a residue generated by the DAC, the first residue capacitor is coupled to the first integral capacitor for charge-sharing of the residue voltage.

Abstract: The present disclosure relates to administration speed of obinutuzumab.

Abstract: A noise-shaping successive approximation analog-to-digital converter (NS-SAR ADC) using a passive noise-shaping technique with 1-input-pair SAR comparator is introduced. A residue sampling and integration circuit is coupled between a DAC and the comparator, for sampling a residue voltage generated by the DAC and charge-sharing of the sampled residue voltage. A first integral capacitor is coupled between a first input terminal of a comparator and a first output terminal of a DAC. After a first residue capacitor samples a residue generated by the DAC, the first residue capacitor is coupled to the first integral capacitor for charge-sharing of the residue voltage.