Abstract: A single wafer spin cleaning apparatus with soaking, cleaning, and etching functions in accordance with the present invention includes a spin driver device, a wafer spin chuck, and a wafer support disk. The wafer spin chuck is driven by the spin driver device to spin. The wafer support disk is annular and surrounds the wafer spin chuck, can act relative to the wafer spin chuck to a wafer support position or a wafer disengagement position, and includes a soaking trough. The wafer support disk at the wafer support position can support a wafer such that the wafer is soaked in processing liquid injected in the soaking trough for implementing a high efficient cleaning or etching process.

Abstract: An electrical connection structure is provided. The electrical connection structure includes a through hole, a first pad, a second pad and a conductive bridge. The through hole has a first end and a second end. The first pad at least partially surrounds the first end of the through hole and is electrically connected to a first circuit. The second pad is located at the second end of the through hole and is electrically connected to a second circuit. The conductive bridge is connected to the first pad and second pad through the through hole, thereby making the first and second circuits electrically connected to each other.

Abstract: Embodiments of the present disclosure relate to a novel semiconductor. In one aspect, the semiconductor may include a transparent layer having a first surface, a first doped layer, a second doped layer, and an active layer. The first doped layer may be formed over the first surface of the transparent layer and have a plurality of first-type electrodes formed thereon. The second doped layer may be formed over the first surface of the transparent layer and have a plurality of second-type electrodes formed thereon. The active layer may be formed between the first doped layer and the second doped layer. A distance between at least one of the first-type electrodes and a nearest other one of the first-type electrodes may be greater than each of respective distances between the at least one of the first-type electrodes and more than two of the second-type electrodes.

Abstract: Embodiments of the present disclosure relate to a novel semiconductor. In one aspect, the semiconductor may include a transparent layer having a first surface, a first doped layer, a second doped layer, and an active layer. The first doped layer may be formed over the first surface of the transparent layer and have a plurality of first-type electrodes formed thereon. The second doped layer may be formed over the first surface of the transparent layer and have a plurality of second-type electrodes formed thereon. The active layer may be formed between the first doped layer and the second doped layer. A distance between at least one of the first-type electrodes and a nearest other one of the first-type electrodes may be greater than each of respective distances between the at least one of the first-type electrodes and more than two of the second-type electrodes.

Abstract: A semiconductor is disclosed. The semiconductor may include a transparent layer having a first surface. The semiconductor may further include a first doped layer formed over the first surface of the transparent layer. The first doped layer may have a plurality of first-type metal electrodes formed thereon. The semiconductor may further include a second doped layer formed over the first surface of the transparent layer. The second doped layer may have a plurality of second-type metal electrodes formed thereon. The semiconductor may also include an active layer formed over the first surface of the transparent layer and disposed between the first doped layer and the second doped layer. The first-type metal electrodes and the second-type metal electrodes may be alternately arranged and the distances between each first-type metal electrode and its adjacent second-type metal electrodes may be substantially equal.

Abstract: A light-emitting diode (LED) package structure includes a LED chip, an interconnecting substrate, a first conductive lead and a second conductive lead. The LED chip is provided with first and second electrical contacts formed on the same side thereof. The upper surface of the interconnecting substrate is provided with two conductive traces and first, second, third and fourth conductive pads. The first and second conductive pads are electrically connected to the third and fourth conductive pads by the two conductive traces, respectively. The first and second conductive leads are directly soldered to the third and fourth conductive pads, respectively. The LED chip is mounted onto the upper surface of the interconnecting substrate in a flip-chip configuration so that the first and second conductive pads thereof are mechanically and electrically connected to the first and second electrical contacts, respectively.

Abstract: A light emitting diode device is disclosed, and the light emitting diode device includes a base, a substrate, a lead frame, a chip, a first mixed layer and a second mixed layer. The first mixed layer and the second mixed layer respectively contain a glue and a thermal conductance insulating material, such as diamond carbon, diamond-like carbon or ceramic. The substrate and the lead frame are set on the base. The first mixed layer is formed between the chip and the substrate to fix the chip and strengthen heat dissipation. The second mixed layer is covered on the substrate and the chip to reduce the difference of the refraction index such that the total internal reflection angle is wider and the emitting efficiency is enhanced.

Abstract: A semiconductor is disclosed. The semiconductor may include a transparent layer having a first surface. The semiconductor may further include a first doped layer formed over the first surface of the transparent layer. The first doped layer may have a plurality of first-type metal electrodes formed thereon. The semiconductor may further include a second doped layer formed over the first surface of the transparent layer. The second doped layer may have a plurality of second-type metal electrodes formed thereon. The semiconductor may also include an active layer formed over the first surface of the transparent layer and disposed between the first doped layer and the second doped layer. The first-type metal electrodes and the second-type metal electrodes may be alternately arranged and the distances between each first-type metal electrode and its adjacent second-type metal electrodes may be substantially equal.

Abstract: A flip-chip light-emitting diode (LED) device is provided. The flip-chip LED device includes a substrate, an n-GaN layer, an epitaxy layer, a p-GaN layer, a first electrode, and a second electrode. The n-GaN layer is formed on a surface of the substrate. The epitaxy layer is formed on the n-GaN layer. The p-GaN layer is formed on the epitaxy layer. The first electrode has a first polarity and is formed on the p-GaN layer. The first electrode substantially covers the p-GaN layer. The second electrode is formed on the n-GaN layer and has a second polarity opposite to the first polarity.

Abstract: A light emitting diode (LED) package includes a circuit board and an LED chip. The circuit board has a top circuit layer and an insulating layer. The top circuit layer is disposed on the insulating layer, and the material of the insulating layer is selected from a group consisting of diamond, diamond like coating (DLC), AlN, BN, CrN and TiN. The LED chip is disposed on the circuit board and electrically connected with the top circuit layer of the circuit board. Since the material of the insulting layer is selected from materials with a high thermal conductivity, the heat dissipation performance and light-emitting efficiency of the LED package can be enhanced.

Abstract: A light emitting diode device is disclosed, and the light emitting diode device includes a base, a substrate, a lead frame, a chip, a first mixed layer and a second mixed layer. The first mixed layer and the second mixed layer respectively contain a glue and a thermal conductance insulating material, such as diamond carbon, diamond-like carbon or ceramic. The substrate and the lead frame are set on the base. The first mixed layer is formed between the chip and the substrate to fix the chip and strengthen heat dissipation. The second mixed layer is covered on the substrate and the chip to reduce the difference of the refraction index such that the total internal reflection angle is wider and the emitting efficiency is enhanced.

Abstract: The light emitting diode structure includes a substrate, a first electricity semiconductor layer formed on the substrate, a light-emitting layer formed on the first electricity semiconductor layer, a second electricity semiconductor layer formed on the light-emitting layer, a barrier layer formed on the second electricity semiconductor layer, and a contact layer formed on the barrier layer.

Abstract: A semiconductor light emitting apparatus is provided. The semiconductor light emitting apparatus includes a light-emitting device, a transparent material and at least one transparent film. The light-emitting device is located in a package substrate. The transparent material covers the light-emitting device. The transparent film is located between the light-emitting device and the transparent material. The refractive index of the transparent film is between the refractive index of the light-emitting device and the transparent material. A method for manufacturing the semiconductor light emitting apparatus is also disclosed.

Abstract: The invention relates to a control method and a control system for a motor. The control method and the control system of the invention transfer the motor dynamic equations of the synchronous d-q frame into a motor parameter (for example, the leakage inductance) and the equivalent counter electromotive force. Then the required control signals for the motor current control can be obtained. The control method of the invention not only preserves the merit of constant switching frequency of the convention PI-PWM control system, but also can eliminate the motor current phase-lag problem of the invention PI-PWM control system. Also, the control method of the invention will have the following characteristics and economic advantages such as high accuracy, fast response, low cost and robustness, etc.

Abstract: The invention relates to a control method and a control system for a motor.

Abstract: An apparatus and a method for preventing etchant condensation on a wafer surface positioned in a wafer cool-down chamber after plasma etching. The apparatus of the process chamber includes a chamber enclosure of elongated shape with an aperture in a top plate, a heating means mounted on the top plate for heating a wafer through the aperture positioned in the cavity; and an exhaust means in fluid communication with an exhaust opening provided at a back end of the chamber enclosure for evacuating gaseous content in the cavity during and after the heating of the wafer, and for cooling the wafer after the radiant heater is turned off.