Abstract: A semiconductor device package includes a number of interposers mounted to the carrier, wherein the number of interposers may be arranged in an irregular pattern.

Abstract: A package structure includes a die, an encapsulation layer, a redistribution layer structure and an adhesive material. The die includes a semiconductor substrate, conductive pads disposed over the semiconductor substrate and a passivation layer disposed over the semiconductor substrate and around the conductive pads. The encapsulation layer laterally encapsulates the die. the redistribution layer structure is disposed on the die and the encapsulation layer, and includes at least one redistribution layer embedded in at least one polymer layer, and the polymer layer contacts a portion of the passivation layer. The adhesive material is disposed on the die and covers an interface between the polymer layer and the passivation layer.

Abstract: A PTC over-current protection device includes a first PTC component, a second PTC component, a first insulation layer, a first conductive via, and a second conductive via. The first PTC component includes a first electrode, a second electrode, and a first PTC element sandwiched between the first electrode and the second electrode. The second PTC component includes a third electrode, a fourth electrode, and a second PTC element sandwiched between the third electrode and the fourth electrode. The first insulation layer is disposed between the first PTC component and the second PTC component. The first conductive via electrically connects the first electrode and the third electrode, and the second conductive via electrically connects the second electrode and the fourth electrode.

Abstract: An image sensor includes a first pixel array. The first pixel array includes multiple photo diodes and a polyhedron structure. The polyhedron structure is located above the photo diodes, and the polyhedron structure includes a bottom facet, a top facet, and at least one side facet. The bottom facet is located between the side facet and the photo diodes, and an orthogonal projection of the polyhedron structure overlaps with photo diodes. The polyhedron structure is configured to divide an incident light into a plurality of light beams focused in the photo diodes.

Abstract: A Car Door Inner Handle Base Repair Method is a technique used to repair the fracture and separation of the welding post between the car door inner handle base and the inner door panel body without the need to replace the entire car door inner panel assembly. This method involves creating an identical repair component by copying the car door inner handle base. The repair component includes multiple corresponding through-posts, aligned with the welding posts of the damaged inner door panel body and the damaged car door inner handle base. To execute the repair, the damaged inner door panel body is drilled with holes corresponding to the through-posts, and the repair component's multiple through-posts are inserted into the corresponding holes on the damaged inner door panel, securing the repair component in place using locking mechanisms.

Abstract: A car tailgate handle base reinforcement and repair structure is designed to be integrated with a car tailgate handle joint. It comprises the following features: a handle base with one side being a connecting surface and the other side being an exposed surface. The connecting surface has a pivot pin on one side and an elastic pin on the opposite side. At least one reinforcement pin, placed at an appropriate location on the connecting surface, and equipped with a tab slot. A flexible tab, with one part of the tab being shaped to correspond with the tab slot's interior and the other part forming a flat spring portion. In this structure, the flexible tab is inserted into the tab slot through the connecting part, forming a connection with the reinforcement pin.

Abstract: Semiconductor structures and formation processes thereof are provided. A semiconductor structure of the present disclosure includes a semiconductor substrate, a plurality of transistors disposed on the semiconductor substrate and comprising a plurality of gate structures extending lengthwise along a first direction, a metallization layer disposed over the plurality of transistors, the metallization layer comprising a plurality of metal layers and a plurality of contact vias, a dielectric layer over the metallization layer, a plurality of dielectric fins extending parallel along the first direction and disposed over the dielectric layer, a semiconductor layer disposed conformally over the plurality of dielectric fins, a source contact and a drain contact disposed directly on the semiconductor layer, and a gate structure disposed over the semiconductor layer and between the source contact and the drain contact.

Abstract: A method and structure for reinforcing a car tailgate handle is used to strengthen a tailgate handle that is prone to breaking. Through the steps of disassembly, measurement, production of reinforcement parts, assembly of reinforcement parts and original parts, and installation, it is possible to quickly and extensively remedy tailgate handles with mechanical structural defects that have already been sold. This method and structure offer advantages such as simplified design, reduced material usage, environmental friendliness, ease of production, and rapid mass production.

Abstract: A method and reinforcement structure of a car door outside handle, used to replace a damaged car door handle. The process involves disassembling, measuring, manufacturing reinforcing components, assembling the reinforcing parts with original components, and installation. This method allows for rapid and mass production, utilizing a structure with embedded reinforcing components to strengthen the weaker areas of the original car door outside handle. It offers advantages such as simplified structure, reduced material usage, environmental friendliness, ease of production, and efficient mass production.

Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.

Abstract: A package structure includes a wiring structure, a first electronic device and a reinforcement structure. The first electronic device is disposed over the top surface of the wiring structure, and has a bottom surface facing the top surface of the wiring structure. The first electronic device includes a plurality of first wires. The reinforcement structure is disposed over the top surface of the wiring structure, and includes a plurality of second wires directly contacting the plurality of first wires to reduce a variation of an elevation of the bottom surface of the first electronic device with respect to the top surface of the wiring structure.

Abstract: A semiconductor device structure and a manufacturing method thereof are provided. The semiconductor device structure includes a substrate, complex two-dimensional material layers disposed over the substrate, a gate structure and source and drain regions. The complex two-dimensional material layers are arranged spaced apart from one each other and in parallel to one another. The gate structure is disposed across and wraps around and surrounds first portions of the complex two-dimensional material layers. The source and drain regions are disposed on opposite sides of the gate structure and wrap around and surround second portions of the complex two-dimensional material layers.

Abstract: A package structure is provided. The package structure includes a semiconductor chip and a protective layer laterally surrounding the semiconductor chip. The package structure also includes a polymer-containing element over the protective layer. The protective layer is wider than the polymer-containing element.

Abstract: An information translation device, information translation method, and an information translation system based on Modbus are provided. The client module of the information translation device receives an information model file including identity information, receives a sensor signal corresponding to first identity information and Modbus data including memory addresses of Modbus protocol, determines a first memory address corresponding to the sensor signal according to sensed values of the sensor signal and values corresponding to each of the memory addresses and builds a memory address mapping table including the first memory address and the first identity information, and receives a first value of the first memory address and searches the first identity information corresponding to the first memory address according to the memory address mapping table. The server module of the information translation device receives the first value and the first identity information and transmits to an OPC UA device.

Abstract: A method for assessing acute kidney injury of inpatient includes the following steps. An electronic medical record data of an inpatient is captured by a processor, and the electronic medical record data includes a baseline basic serum creatinine concentration data. A target serum creatinine concentration data and a minimum post-admission serum creatinine concentration data of the inpatient are captured by the processor. A dynamic-increasing value of serum creatinine concentration is calculated to obtain by the processor based on the target serum creatinine concentration data, the baseline basic serum creatinine concentration data and the minimum post-admission serum creatinine concentration data. The dynamic-increasing value of serum creatinine concentration is analyzed by the processor to assess whether the inpatient is an inpatient suffering the acute kidney injury or not.

Abstract: A manufacturing method of the circuit board includes the following. The third substrate has an opening and includes a first, a second and a third dielectric layers. The opening penetrates the first and the second dielectric layers, and the opening is fully filled with the third dielectric layer. The first, the second and the third substrates are press-fitted so that the second substrate is located between the first and the third substrates. Multiple conductive structures are formed so that the first, the second and the third substrates are electrically connected through the conductive structures to define a ground path. A conductive via structure is formed to penetrate the first substrate, the second substrate, and the third dielectric layer of the third substrate. The conductive via structure is electrically connected to the first and the third substrates to define a signal path. The ground path surrounds the signal path.

Abstract: A semiconductor device includes logic circuitry including a transistor disposed over a substrate, multiple layers each including metal wiring layers and an interlayer dielectric layer, respectively, disposed over the logic circuitry, and memory arrays. The multiple layers of metal wiring include, in order closer to the substrate, first, second, third and fourth layers, and the memory arrays include lower multiple layers disposed in the third layer.

Abstract: A bus bar assembly is provided and includes a first linking bus bar, a second linking bus bar and plural power connectors. The first linking bus bar includes a first main bar, a first bending part and a first conducting part. The first bending part connects between the first main bar and the first conducting part. The second linking bus bar is disposed corresponding to and isolated from the first linking bus bar, and includes a second main bar, a second bending part and a third conducting part. The second bending part connects between the second main bar and the third conducting part. The power connectors are electrically coupled with the first main bar and the second main bar, respectively.

Abstract: A semiconductor device includes a substrate, a first poly-material pattern, a first conductive element, a first semiconductor layer, and a first gate structure. The first poly-material pattern is over and protrudes outward from the substrate, wherein the first poly-material pattern includes a first active portion and a first poly-material portion joined to the first active portion. The first conductive element is over the substrate, wherein the first conductive element includes the first poly-material portion and a first metallic conductive portion covering at least one of a top surface and a sidewall of the first poly-material portion. The first semiconductor layer is over the substrate and covers the first active portion of the first poly-material pattern and the first conductive element. The first gate structure is over the first semiconductor layer located within the first active portion.

Abstract: A fabricating method of a heat-insulating and UV-resistant fabric includes the following steps. A melt-spinning step is performed on a raw material to form a plurality of fibers, in which the raw material includes a near-infrared reflecting masterbatch, the near-infrared reflecting masterbatch includes a near-infrared reflecting dye, and when a content of the fibers is 100 wt %, a content of the near-infrared reflecting dye is 0.5 wt % to 1.0 wt %. The fibers are weaved to form the heat-insulating and UV-resistant fabric. A post-processing dyeing step is performed on the heat-insulating and UV-resistant fabric.