Abstract: In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. The first semiconductor layers, the second semiconductor layer and an upper portion of the fin structure at a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, are etched. A dielectric layer is formed over the etched upper portion of the fin structure. A source/drain epitaxial layer is formed. The source/drain epitaxial layer is connected to ends of the second semiconductor wires, and a bottom of the source/drain epitaxial layer is separated from the fin structure by the dielectric layer.

Abstract: Provided are a composition and a method for preventing thrombogenesis. The composition includes a conjugate of heparin and a viral capsid protein, wherein the heparin is covalently bonded with the viral capsid protein.

Abstract: A two-phase immersion-type heat dissipation structure having high density heat dissipation fins is provided. The two-phase immersion-type heat dissipation structure having high density heat dissipation fins includes a heat dissipation substrate, a plurality of sheet-like heat dissipation fins, and a reinforcement structure. A bottom surface of the heat dissipation substrate is in contact with a heating element immersed in a two-phase coolant. The plurality of sheet-like heat dissipation fins are integrally formed on an upper surface of the heat dissipation substrate and arranged in high density. An angle between at least one of the sheet-like heat dissipation fins and the upper surface of the heat dissipation substrate is from 60° to 120°. At least one of the sheet-like heat dissipation fins has a length from 50 mm to 120 mm, a width from 0.1 mm to 0.35 mm, and a height from 2 mm to 8 mm.

Abstract: A slide rail mechanism includes a slide rail assembly and an auxiliary rail member. The slide rail assembly includes two slide rails. The auxiliary rail member is movably mounted to a first one of the two slide rails. When a second one of the two slide rails is detached from the first one of the two slide rails along an open direction, the auxiliary rail member is able to be moved from a retracted position to a predetermined extended position along the open direction relative to the first one of the two slide rails. The second one of the two slide rails is configured to carry a first carried object, and the auxiliary rail member is configured to carry a second carried object.

Abstract: A manufacturing method of an optical device includes: providing a lower transparent substrate; wherein the lower transparent substrate includes an upper surface; providing a quantum dot film element and a glue-material enclosure wall disposed on the upper surface; wherein the glue-material enclosure wall surrounds the quantum dot film element; providing an upper transparent substrate covering the quantum dot film element and the glue-material enclosure wall, such that the quantum dot film element and the glue-material enclosure wall are sandwiched between the lower transparent substrate and the upper transparent substrate; and cutting the lower transparent substrate and the upper transparent substrate to form a lower protective film and an upper protective film corresponding to the quantum dot film element, so as to obtain the optical device including the lower protective film, the upper protective film, the quantum dot film element, and the glue-material enclosure wall.

Abstract: A supporting assembly adapted for a rack is provided and includes a supporting bracket, a plurality of slide rails, a plurality of movable rails and a plurality of supporting rails. The supporting bracket is configured to be mounted on the rack and includes a first predetermined end portion and a second predetermined end portion. The plurality of slide rails are configured to be detachably mounted on the supporting bracket. The plurality of supporting rails are movably mounted on the plurality of movable rails movably mounted on the plurality of slide rails, respectively. Each of the plurality of slide rails includes a first end portion, a second end portion, and a middle portion located between the first end portion and the second end portion. The first predetermined end portion of the supporting bracket protrudes from the first end portion of each of the plurality of slide rails along a longitudinal direction.

Abstract: This disclosure is directed to an electrical connector having an insulative seat, a first terminal group and a second terminal group. The first terminal group has first terminals embedded in the insulative seat, the first terminals are separated from each other, and each first terminal has a first wiring end. The second terminal group is separated from the first terminal group, the second terminal group has second terminals and a connecting strip, the second terminals are embedded in the insulative seat, each second terminal has a second wiring end. The first and the second terminals are arranged on a reference plane, the first and the second terminals protrude from one side of the insulative seat, and the second terminals are bent to deviate from the reference plane, and the connecting strip is connected with the second terminals to make the second terminals be electrically connected with each other.

Abstract: A slide rail assembly is provided and includes a first rail, a second rail, a blocking feature, an engaging member and an operating member. The second rail is displaceable relative to the first rail along a longitudinal direction. The blocking feature is arranged on the first rail. When the second rail is located at a predetermined position relative to the first rail, the blocking feature blocks the engaging member for preventing a displacement of the second rail from the predetermined position along a first direction. The operating member is configured to drive the engaging member, such that the engaging member is not blocked by the blocking feature for allowing the displacement of the second rail from the predetermined position along the first direction.

Abstract: A method for generating a customized speech enhancement model includes obtaining noisy-clean speech data from a source domain, obtaining noisy speech data from a target domain; obtaining raw speech data, using the noisy-clean speech data, the noisy speech data, and the raw speech data, training the customized SE model based on at least one of self-supervised representation-based adaptation (SSRA), ensemble mapping, or self-supervised adaptation loss, generating the customized SE model by denoising the noisy speech data using the trained customized SE model, and providing the customized SE model to a user device to use the denoised noisy speech data.

Abstract: A method for performing cuffless blood pressure (BP) measurement, including: obtaining a first physiological signal and a second physiological signal associated with a user; providing the first physiological signal as an input to a first transformer model; providing the second physiological signal as an input to a second transformer model; providing an output of the first transformer model and an output of the second transformer model as inputs to a third transformer model; providing an output of the third transformer model to at least one BP estimation model; and generating an estimated BP value corresponding to the first physiological signal and the second physiological signal based on an output of the at least one BP estimation model

Abstract: The present disclosure provides a method of making a semiconductor device. The method includes forming a semiconductor stack on a substrate, wherein the semiconductor stack includes first semiconductor layers of a first semiconductor material and second semiconductor layers of a second semiconductor material alternatively stacked on the substrate; patterning the semiconductor stack and the substrate to form a trench and an active region being adjacent the trench; epitaxially growing a liner of the first semiconductor material on sidewalls of the trench and sidewalls of the active region; forming an isolation feature in the trench; performing a rapid thermal nitridation process, thereby converting the liner into a silicon nitride layer; and forming a cladding layer of the second semiconductor material over the silicon nitride layer.

Abstract: A driving mechanism is provided and includes a first casing, a second casing and an operating member. The second casing is arranged on the first casing. The operating member is movably mounted on one of the first casing and the second casing. When the operating member is moved from a first state to a second state, the operating member drives another one of the first casing and the second casing to move from a first predetermined position to a second predetermined position along a first vertical direction. When the operating member is moved from the second state to the first state, the another one of the first casing and the second casing moves from the second predetermined position to the first predetermined position along a second vertical direction opposite to the first vertical direction.

Abstract: A semiconductor package includes a semiconductor die including die connectors, a first insulating encapsulant laterally covering the semiconductor die, a die attach film (DAF) overlying the first insulating encapsulant and the semiconductor die, and a redistribution structure overlying the DAF and the semiconductor die. The die connectors are laterally covered by the DAF, and the redistribution structure is electrically coupled to the die connectors.

Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.

Abstract: A MRAM layout structure with multiple unit cells, including a first word line, a second word line and a third word line extending through active areas, wherein two ends of a first MTJ are connected respectively to a second active area and one end of a second MTJ, and two ends of a third MTJ are connected respectively to a third active area and one end of a fourth MTJ, and a first bit line and a second bit line connected respectively to the other end of the second MTJ and the other end of the fourth MTJ.

Abstract: A slide rail assembly includes a first rail, a second rail, a slide assisting device, an elastic member and a working member. The second rail and the first rail are movable relative to each other. The elastic member is arranged on the second rail. During a process of the second rail being moved relative to the first rail along an opening direction, the working member is configured to contact the elastic member in an initial state in order to drive the slide assisting device to move along the opening direction to a predetermined position. When the slide assisting device is located at the predetermined position, the elastic member releases an elastic force through a predetermined space of the first rail, such that the elastic member is no longer in the initial state with the working member no longer contacting the elastic member.

Abstract: Provided are a gate structure and a method of forming the same. The gate structure includes a gate dielectric layer, a metal layer, and a cluster layer. The metal layer is disposed over the gate dielectric layer. The cluster layer is sandwiched between the metal layer and the gate dielectric layer, wherein the cluster layer at least includes an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer. In addition, a semiconductor device including the gate structure is provided.

Abstract: A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.

Abstract: Method and associated system for managing and/or authenticating an energy storage device. The method includes receiving a first portion of identification information stored in a data storage attached to the energy storage device (401); analyzing the first portion of the identification information at least partially based on a device identification of the device (403); updating a second portion of the identification information stored in the data storage attached to the energy storage device based on a result of analyzing the first portion of the identification information (405).

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. An alignment process is performed on a first semiconductor workpiece and a second semiconductor workpiece by virtue of a plurality of workpiece pins. The first semiconductor workpiece is bonded to the second semiconductor workpiece. A shift value is determined between the first and second semiconductor workpieces by virtue of a first plurality of alignment marks on the first semiconductor workpiece and a second plurality of alignment marks on the second semiconductor workpiece. A layer of an integrated circuit (IC) structure is formed over the second semiconductor workpiece based at least in part on the shift value.