Abstract: A semiconductor structure is provided. The semiconductor structure includes a first conductive feature and a second conductive feature disposed in an interlayer dielectric (ILD) layer. The semiconductor structure includes a first graphene layer disposed over the first conductive feature and a second graphene layer disposed over a portion of the second conductive feature. An etch-stop layer (ESL) is horizontally interposed between the first graphene layer and the second graphene layer. A side surface of the first or the second graphene layer directly contacts a side surface of the ESL. A third conductive feature is electrically coupled to the second conductive feature. The third conductive feature is separated from the first graphene layer by a portion of the ESL, and the third conductive feature also directly contacts a top surface of the ESL.

Abstract: A semiconductor device, includes a device layer comprising: a channel region; a gate stack over and along sidewalls of the channel region and a first insulating fin; and an epitaxial source/drain region adjacent the channel region, wherein the epitaxial source/drain region extends through the first insulating fin. The semiconductor device further includes a front-side interconnect structure on a first side of the device layer; and a backside interconnect structure on a second side of the device layer opposite the first side of the device layer. The backside interconnect structure comprises a backside source/drain contact that is electrically connected to the epitaxial source/drain region.

Abstract: A package structure includes a supporting base, conductive pillars, a first semiconductor die, a second semiconductor die, a first adhesive material, a second adhesive material and an isolation structure. The conductive pillars are disposed in the supporting base, and protruding out from a top surface of the supporting base. The second semiconductor die is adjacent to the first semiconductor die, wherein the first and second semiconductor dies are disposed on the supporting base and electrically connected to the conductive pillars. The first adhesive material is disposed in between the first semiconductor die and the top surface of the supporting base, and partially covering the conductive pillars. The second adhesive material is disposed in between the second semiconductor die and the top surface of the supporting base, and partially covering the conductive pillars. The isolation structure prevents a bleeding of the first and second adhesive material to an adjacent semiconductor die.

Abstract: Herein disclosed are an electronic component testing system and a time certification method. The electronic component testing system comprising a testing device and an interface device. The testing device comprises a backboard, and the backboard electrically connected to at least one test board and comprising a time certification component. The interface device, electrically connected to the testing device, provides a test instruction. Wherein the time certification component stores an authorization start time and an authorization end time. Wherein the testing device starts a test procedure according to the test instruction, the time certification component updates the authorization start time to a first stop time of the test procedure after the test procedure is completed.

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.

Abstract: A slide rail assembly is provided and includes a first rail, a second rail movable with respect to the first rail, a working member, an operating member and a blocking member. When the second rail is located at an extended position with respect to the first rail and the working member is in a first state, the working member and a blocking feature of the first rail block each other for restraining the second rail from moving toward a first predetermined direction from the extended position. The blocking member is switchable between a blocking state and a non-blocking state for restraining the operating member from driving the working member to disengage from the first state or for allowing the operating member to drive the working member from the first state to a second state. Besides, a related slide rail kit is also provided.

Abstract: A memory device includes a memory array and control logic, operatively coupled with the memory array, to perform operations including initiating a read recovery process associated with a block of the memory array. The block includes wordlines at an initial voltage. The operations further include causing an early discharge sequence to be performed on a first set of wordlines of the wordlines during the read recovery process to alleviate latent read disturb. The early discharge sequence includes ramping the first set of wordlines from the initial voltage to a ramping voltage while maintaining a second set of wordlines of the wordlines at the initial voltage.

Abstract: A slide rail assembly includes a supporting frame, a first rail, a second rail and a third rail. The first rail is movable relative to the supporting frame. The second rail is movable relative to the first rail. The third rail is movable relative to the second rail, and the second rail is movably mounted between the first rail and the third rail. The first rail can be moved to a second predetermined position from a first predetermined position in a retracting direction relative the supporting frame. The first rail can be retained at the second predetermined position so as to shorten a length of the slide rail assembly such that the third rail can be detached from the second rail easily in a limited environment.

Abstract: Methods and apparatuses for forming spacer material for multiple patterning schemes by depositing a sacrificial layer on a carbon-containing mandrel during a multiple patterning scheme prior to depositing a spacer material and removing the sacrificial layer while depositing a spacer on the carbon-containing mandrel, and/or by forming at least initial layers of a spacer material directly on a mandrel using a soft atomic layer deposition process involving plasma treatment during the atomic layer deposition are provided.

Abstract: An integrated circuit includes a first power rail on a back-side of a wafer and being configured to supply a first voltage, a header circuit coupled to the first power rail and being configured to supply the first voltage to the first power rail, a second and third power rail on the back-side of the wafer, a fourth power rail on a front-side of the wafer, and a fifth power rail on the back-side of the wafer. The second and third power rail being configured to supply a second voltage. The fourth power rail includes a first set of conductors configured to supply a third voltage to the header circuit. The fifth power rail is configured to supply the third voltage and is separated from the first power rail in a first and second direction, and is separated from the second and third power rail in the first direction.

Abstract: A galactose rapid quantitative detection system utilizing a test strip containing a concentration of galactose dehydrogenase as the enzyme and a concentration of trehalose as the stabilizer. The system includes a galactose solution composition including a galactose, a buffer and an antioxidant; a test strip, including an enzyme, and a stabilizer; and a meter. The meter includes a power supply unit for providing a signal; a connector for receiving the signal transmitting the signal to the test strip, the signal reacting with the electrochemical information, and the connector transmits the response signal to the meter; a calculation unit for calculating the response signal; an A/D convertor for receiving the response signal from the calculation unit, transforming the response signal into a digital reaction signal; a processor for processing the digital reaction signal; a display for displaying the digital reaction signal; and a digital terminal for receiving the digital reaction signal.

Abstract: A slide rail assembly includes a first rail, a second rail, a releasing member, a blocking member and an operating member. A first positioning structure, an assisting structure and a second positioning structure are arranged on the first rail. The assisting structure is located between the first positioning structure and the second positioning structure. The second rail is displaceable relative to the first rail and can be positioned at different positions by a blocking of at least one of the releasing member and the blocking member and one of the first positioning structure, the assisting structure and the second positioning structure. The operating member is configured to operate the releasing member and the blocking member for terminating the blocking of the at least one of the releasing member and the blocking member and the one of the first positioning structure, the assisting structure and the second positioning structure.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first conductive feature and a second conductive feature disposed in an interlayer dielectric (ILD) layer. The semiconductor structure includes a first graphene layer disposed over the first conductive feature and a second graphene layer disposed over a portion of the second conductive feature. An etch-stop layer (ESL) is horizontally interposed between the first graphene layer and the second graphene layer. A side surface of the first or the second graphene layer directly contacts a side surface of the ESL. A third conductive feature is electrically coupled to the second conductive feature. The third conductive feature is separated from the first graphene layer by a portion of the ESL, and the third conductive feature also directly contacts a top surface of the ESL.

Abstract: Provided is a pharmaceutical composition for treating a mast cell tumor, including a benzenesulfonamide derivative and a pharmaceutically acceptable carrier. Also provided is a method for treating a mast cell tumor in a subject in need thereof by using the pharmaceutical composition.

Abstract: A slide rail assembly includes a first rail and a second rail. The first rail includes a first wall, a second wall and a first middle wall connected between the first and second walls. The second rail includes a first side wall, a second side wall and a second middle wall connected between the first and the second side walls. The first middle wall is arranged with a first ball groove, and the second rail further includes an extension wall including a first extension section, a second extension section and a first middle section connected between the first and second extension sections. The first extension section is extended from the first side wall, the second extension section is extended toward the second middle wall, and the first middle section is formed with a second ball groove. At least one rolling member is located between the first and second ball grooves.

Abstract: A slide rail assembly includes at least two slide rails. One of the two slide rails includes a pair of walls and a middle wall connected between the pair of walls. The middle wall of the slide rail is arranged with a predetermined part bent relative to the middle wall, and the predetermined part is formed with a ball groove.