Abstract: This disclosure is directed to an electrical connector having an insulative seat, a first terminal group and a second terminal group. The first terminal group has first terminals embedded in the insulative seat, the first terminals are separated from each other, and each first terminal has a first wiring end. The second terminal group is separated from the first terminal group, the second terminal group has second terminals and a connecting strip, the second terminals are embedded in the insulative seat, each second terminal has a second wiring end. The first and the second terminals are arranged on a reference plane, the first and the second terminals protrude from one side of the insulative seat, and the second terminals are bent to deviate from the reference plane, and the connecting strip is connected with the second terminals to make the second terminals be electrically connected with each other.

Abstract: A slide rail assembly is provided and includes a first rail, a second rail, a blocking feature, an engaging member and an operating member. The second rail is displaceable relative to the first rail along a longitudinal direction. The blocking feature is arranged on the first rail. When the second rail is located at a predetermined position relative to the first rail, the blocking feature blocks the engaging member for preventing a displacement of the second rail from the predetermined position along a first direction. The operating member is configured to drive the engaging member, such that the engaging member is not blocked by the blocking feature for allowing the displacement of the second rail from the predetermined position along the first direction.

Abstract: A method for generating a customized speech enhancement model includes obtaining noisy-clean speech data from a source domain, obtaining noisy speech data from a target domain; obtaining raw speech data, using the noisy-clean speech data, the noisy speech data, and the raw speech data, training the customized SE model based on at least one of self-supervised representation-based adaptation (SSRA), ensemble mapping, or self-supervised adaptation loss, generating the customized SE model by denoising the noisy speech data using the trained customized SE model, and providing the customized SE model to a user device to use the denoised noisy speech data.

Abstract: A method for performing cuffless blood pressure (BP) measurement, including: obtaining a first physiological signal and a second physiological signal associated with a user; providing the first physiological signal as an input to a first transformer model; providing the second physiological signal as an input to a second transformer model; providing an output of the first transformer model and an output of the second transformer model as inputs to a third transformer model; providing an output of the third transformer model to at least one BP estimation model; and generating an estimated BP value corresponding to the first physiological signal and the second physiological signal based on an output of the at least one BP estimation model

Abstract: The present disclosure provides a method of making a semiconductor device. The method includes forming a semiconductor stack on a substrate, wherein the semiconductor stack includes first semiconductor layers of a first semiconductor material and second semiconductor layers of a second semiconductor material alternatively stacked on the substrate; patterning the semiconductor stack and the substrate to form a trench and an active region being adjacent the trench; epitaxially growing a liner of the first semiconductor material on sidewalls of the trench and sidewalls of the active region; forming an isolation feature in the trench; performing a rapid thermal nitridation process, thereby converting the liner into a silicon nitride layer; and forming a cladding layer of the second semiconductor material over the silicon nitride layer.

Abstract: A driving mechanism is provided and includes a first casing, a second casing and an operating member. The second casing is arranged on the first casing. The operating member is movably mounted on one of the first casing and the second casing. When the operating member is moved from a first state to a second state, the operating member drives another one of the first casing and the second casing to move from a first predetermined position to a second predetermined position along a first vertical direction. When the operating member is moved from the second state to the first state, the another one of the first casing and the second casing moves from the second predetermined position to the first predetermined position along a second vertical direction opposite to the first vertical direction.

Abstract: A semiconductor package includes a semiconductor die including die connectors, a first insulating encapsulant laterally covering the semiconductor die, a die attach film (DAF) overlying the first insulating encapsulant and the semiconductor die, and a redistribution structure overlying the DAF and the semiconductor die. The die connectors are laterally covered by the DAF, and the redistribution structure is electrically coupled to the die connectors.

Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.

Abstract: A MRAM layout structure with multiple unit cells, including a first word line, a second word line and a third word line extending through active areas, wherein two ends of a first MTJ are connected respectively to a second active area and one end of a second MTJ, and two ends of a third MTJ are connected respectively to a third active area and one end of a fourth MTJ, and a first bit line and a second bit line connected respectively to the other end of the second MTJ and the other end of the fourth MTJ.

Abstract: A slide rail assembly includes a first rail, a second rail, a slide assisting device, an elastic member and a working member. The second rail and the first rail are movable relative to each other. The elastic member is arranged on the second rail. During a process of the second rail being moved relative to the first rail along an opening direction, the working member is configured to contact the elastic member in an initial state in order to drive the slide assisting device to move along the opening direction to a predetermined position. When the slide assisting device is located at the predetermined position, the elastic member releases an elastic force through a predetermined space of the first rail, such that the elastic member is no longer in the initial state with the working member no longer contacting the elastic member.

Abstract: Provided are a gate structure and a method of forming the same. The gate structure includes a gate dielectric layer, a metal layer, and a cluster layer. The metal layer is disposed over the gate dielectric layer. The cluster layer is sandwiched between the metal layer and the gate dielectric layer, wherein the cluster layer at least includes an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer. In addition, a semiconductor device including the gate structure is provided.

Abstract: A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.

Abstract: Method and associated system for managing and/or authenticating an energy storage device. The method includes receiving a first portion of identification information stored in a data storage attached to the energy storage device (401); analyzing the first portion of the identification information at least partially based on a device identification of the device (403); updating a second portion of the identification information stored in the data storage attached to the energy storage device based on a result of analyzing the first portion of the identification information (405).

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. An alignment process is performed on a first semiconductor workpiece and a second semiconductor workpiece by virtue of a plurality of workpiece pins. The first semiconductor workpiece is bonded to the second semiconductor workpiece. A shift value is determined between the first and second semiconductor workpieces by virtue of a first plurality of alignment marks on the first semiconductor workpiece and a second plurality of alignment marks on the second semiconductor workpiece. A layer of an integrated circuit (IC) structure is formed over the second semiconductor workpiece based at least in part on the shift value.

Abstract: A card device and a manufacturing method thereof are disclosed. The card device includes a first substrate, a circuit board, a sensing module and a second substrate. The circuit board is disposed on the first substrate, and the circuit board includes an accommodating recess. The sensing module is disposed in the accommodating recess. The sensing module includes a sensing unit and a protective layer formed on the sensing unit, and the sensing unit is electrically connected to the circuit board. The second substrate is disposed on the circuit board. The second substrate includes an opening, and the opening exposes the protective layer.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A slide rail assembly includes a first rail, a second rail, a slide-facilitating device, and a retaining member. The second rail is movably mounted in a channel of, and is longitudinally displaceable with respect to, the first rail. The slide-facilitating device is movably mounted between the rails and includes an engaging feature. The retaining member is provided on the first rail and includes an elastic portion with a predetermined feature. The first rail includes a limiting feature for preventing deformation of the elastic portion. When the second rail is moved out of the channel after displacement in an opening direction with respect to the first rail, the slide-facilitating device is at a predetermined position, with the engaging feature engaged with the predetermined feature.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.

Abstract: Methods for fabricating diode wafers and wafers to be processed process raw wafers sliced from an ingot and determines whether the raw wafers meet a fabrication specification. When the determined result is yes, the raw wafer is used as a high-grade raw wafer. When the determined result is no, the raw wafers are used as low-grade raw wafers. Next, the method calculates the ratio of the number of low-grade raw wafers with problems related to crystal oriented pits to the number of all low-grade raw wafers and determines whether the ratio is greater than a preset value. When the ratio is not greater than the preset value, the partial structure of each low-grade raw wafer is removed and the surface of each low-grade raw wafer is smoothed. Finally, diode structures are formed in the smoothed low-grade raw wafers to obtain diode wafers.