Abstract: A rotatable cover plate assembly (10) has a cavity (13) and a rotatable base plate assembly (12) has a cavity (42) with a semiconductor wafer (14) mounted therein. The cover plate assembly (10) comes down onto the base plate assembly (12) enclosing the semiconductor wafer (14) and a dispenser (28) in a chamber formed by the cavities (13) and (42). The cover and base plates (16) and (40) are rotated as a single assembly, and coating material dispensed by the dispenser (28) onto the semiconductor wafer (14). A flow regulator (25) coupled via an exhaust manifold (20) controls the rate of evaporate of solvent from the dispensed coating material.

Abstract: A rotatable cover plate assembly 10 has a cavity 13 and a rotatable base plate assembly 12 has a cavity 42 with a semiconductor wafer 14 mounted therein. The cover plate assembly 10 comes down onto the base plate assembly 12 enclosing the semiconductor wafer 14 and a dispenser 28 in a chamber formed by the cavities 13 and 42. The cover and base plates 16 and 40 are rotated as a single assembly, and coating material dispensed by the dispenser 28 onto the semiconductor wafer 14. A flow regulator 25 coupled via an exhaust manifold 20 controls the rate of evaporate of solvent from the dispensed coating material.

Abstract: An apparatus for wet processing of substrates in a controlled environment. It is a single-substrate processing apparatus which is capable of carrying out etching, rinsing, and drying processes all in a single apparatus and in a controlled environment. A closed processing chamber is provided for processing a substrate in a closed environment. Processing liquids and gases are introduced into the chamber and the chamber is rotated with the substrate. Temperature inside the chamber is controlled by heating the gases. Humidity is controlled by varying the proportion of water vapor. The rotation of the chamber with the substrate creates a stable environment where processing parameters are more easily controlled.

Abstract: An apparatus for wet processing of substrates in a controlled environment. It is a single-substrate processing apparatus which is capable of carrying out etching, rinsing, and drying processes all in a single apparatus and in a controlled environment. A closed processing chamber is provided for processing a substrate in a closed environment. Processing liquids and gases are introduced into the chamber and the chamber is rotated with the substrate. Temperature inside the chamber is controlled by heating the gases. Humidity is controlled by varying the proportion of water vapor. The rotation of the chamber with the substrate creates a stable environment where processing parameters are more easily controlled.