Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, a first deep well region, at least two second well regions, at least one isolation structure and an implantation region. The first deep well region is disposed in the semiconductor substrate, wherein the first deep well region has a first conductivity type. The second well regions are disposed on the first deep well region, wherein the second well regions have a second conductivity type. The isolation structure covers a portion of the first deep well region and surrounds at least a portion of the second well regions. The implantation region is located under a top surface of the semiconductor substrate, wherein the implantation region has a discontinuous portion, and the discontinuous portion partially overlaps the first deep well region.

Abstract: A real-time database provides the predictable, high speed data access required for on-line applications, while providing flexible searching capabilities. The data retrieval routines include the option to "read-through-lock" to access data in locked data tables, the capability to directly access to data using tuple identifiers, and the capability to directly access unformatted data from input areas which contain blocks of unformatted data. The data updating routines include an option to omit index updating when updating data and an option to update data in a locked data table. Multiple indexes can be defined for a data table. Thus, high speed searches can be performed based on a variety of data fields. The data storage and retrieval mechanisms are independent and there are hash index tables that connect the multiple index keys to the data tables. The data table structure includes a column defined for storing tuple identifier strings.