Abstract: An impact-resistant polypropylene film and a method for producing the same are provided. The impact-resistant polypropylene film includes two outer layers and a middle layer. Each of the outer layers includes a propylene block polymer. The propylene block polymer includes a propylene monomer and an ethylene-propylene polymer, and the ethylene-propylene polymer is dispersed in the propylene monomer to form a sea-island structure. The sea-island structure includes a sea phase and an island phase, the propylene monomer is defined as the sea phase, and the ethylene-propylene polymer is defined as the island phase. The middle layer includes a propylene block polymer and an ethylene elastomer. Based on 100 parts by weight of the middle layer, a content of the propylene block polymer is 60 to 80 parts by weight, and a content of the ethylene elastomer is 20 to 40 parts by weight.

Abstract: A polyolefin film for an aluminum plastic film and an aluminum plastic film structure are provided. The polyolefin film includes a laminating film, a middle film, and a heat-sealed film. The middle film is disposed between the laminating film and the heat-sealed film. A lamination temperature of the laminating film ranges from 70° C. to 100° C. A material forming the laminating film is a first polyolefin material. The first polyolefin material has a modified group, and a structure of the modified group contains maleic anhydride. A material forming the middle film includes: 50 phr to 90 phr of a propylene block copolymer, 5 phr to 30 phr of an ethylene elastomer, and 5 phr to 20 phr of a propylene random copolymer.

Abstract: The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening.

Abstract: The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening.

Abstract: A touch device and a fabrication method thereof are provided. The touch device includes a cover lens, a light shielding pattern disposed on the cover lens, a UV cut layer disposed on the light shielding pattern and the cover lens, and a plurality of transparent conductive patterns disposed on the UV cut layer, wherein the transparent conductive patterns are formed by using a laser beam to etch a transparent conductive layer.

Abstract: A pin connector includes: a metal outer shell having a tubular wall that has an inner surface, an annular shoulder face that is formed on the inner surface, and a punched rib that protrudes inwardly from the inner surface above the annular shoulder face; and a metal clamping device having an annular wall with an outer surface abutted against the inner surface, a retaining flange, and a plurality of resilient clamp arms. The retaining flange protrudes outwardly from the outer surface of the annular wall to extend over the annular shoulder face and is pressed by the punched rib against the annular shoulder face.

Abstract: A structural configuration and manufacture method is applied to manufacture electronic circuits on a ceramic substrate including capacitor and inductors for filters. The electronic circuits have strong bonding to securely adhere to the SOG-coated substrate when the SOG is cured at an elevated temperature supplemented with high nitrogen flow during the curing process. The SOG coated ceramic substrate shows excellent layer compatibilities during temperature variations because reduced differences of thermal coefficients between different layers.

Abstract: A structural configuration and manufacture method is applied to manufacture electronic circuits on a ceramic substrate including capacitor and inductors for filters. The electronic circuits have strong bonding to securely adhere to the SOG-coated substrate when the SOG is cured at an elevated temperature supplemented with high nitrogen flow during the curing process. The SOG coated ceramic substrate shows excellent layer compatibilities during temperature variations because reduced differences of thermal coefficients between different layers.

Abstract: A susceptor device in a masked sputtering chamber is disclosed. The device of the present invention comprises a susceptor, a lifter and at least one heater. The susceptor, having at least one trench, is coupled with the lifter having at least one rod. The heater is disposed in the trench and coupled with the rod through the access hole at the bottom of the trench. After the sputtering process for forming indium tin oxide (ITO) film is completed, a baking process is applied to the mask in the chamber for converting the amorphous ITO film formed on the mask to polycrystalline ITO film, thereby increasing the life of the mask.