Patents by Inventor Ching-Chi Liu

Ching-Chi Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POLISHING PAD CONDITIONER AND METHOD FOR CONDITIONING POLISHING PAD
    Publication number: 20090075567
    Abstract: A polishing pad conditioner is provided. The polishing pad includes a substrate, at least one surface-conditioning unit, and at least one groove-cleaning unit. The surface-conditioning unit and the groove-cleaning unit are both disposed on a surface of the substrate. In addition, the surface-conditioning unit is integrally formed with the groove-cleaning unit form.
    Type: Application
    Filed: January 30, 2008
    Publication date: March 19, 2009
    Applicant: POWERCHIP SEMICONDUCTOR CORP.
    Inventors: Ta-Jen Wang, Shing-I Chen, Ching-Chi Liu, Shuang-Hsun Chang
  • METHOD OF FORMING SI TIP BY SINGLE ETCHING PROCESS AND ITS APPLICATION FOR FORMING FLOATING GATE
    Publication number: 20070235413
    Abstract: The invention provides a method of forming a silicon tip by a single etching process, as well as a method of forming a tip floating gate to increase erase speed. Etching gases comprising (1) chlorine and/or (2) oxygen/helium are performed to form a silicon tip without bottom dimple. The invention may further control the tip angle by adjusting the etching parameters of gas compositions and ratios, chamber pressures, and radio frequency powers.
    Type: Application
    Filed: June 14, 2007
    Publication date: October 11, 2007
    Inventors: Chih-Ming CHEN, Rong-Yuan Hsieh, Ching-Chi Liu
  • Method of forming SI tip by single etching process and its application for forming floating gate
    Patent number: 7259051
    Abstract: The invention provides a method of forming a silicon tip by a single etching process, as well as a method of forming a tip floating gate to increase erase speed. Etching gases comprising (1) chlorine and/or (2) oxygen/helium are performed to form a silicon tip without bottom dimple. The invention may further control the tip angle by adjusting the etching parameters of gas compositions and ratios, chamber pressures, and radio frequency powers.
    Type: Grant
    Filed: February 7, 2005
    Date of Patent: August 21, 2007
    Assignee: Powerchip Semiconductor Corp.
    Inventors: Chih-Ming Chen, Rong-Yuan Hsieh, Ching-Chi Liu
  • Method of forming SI tip by single etching process and its application for forming floating gate
    Publication number: 20060178011
    Abstract: The invention provides a method of forming a silicon tip by a single etching process, as well as a method of forming a tip floating gate to increase erase speed. Etching gases comprising (1) chlorine and/or (2) oxygen/helium are performed to form a silicon tip without bottom dimple. The invention may further control the tip angle by adjusting the etching parameters of gas compositions and ratios, chamber pressures, and radio frequency powers.
    Type: Application
    Filed: February 7, 2005
    Publication date: August 10, 2006
    Inventors: Chih-Ming Chen, Rong-Yuan Hsieh, Ching-Chi Liu
  • Digital picture frame
    Patent number: D567513
    Type: Grant
    Filed: April 25, 2007
    Date of Patent: April 29, 2008
    Assignee: Universal Scientific Industrial Co., Ltd.
    Inventors: Tin-Ni Fang, Ching-Chi Liu
  • Display
    Patent number: D571560
    Type: Grant
    Filed: May 10, 2007
    Date of Patent: June 24, 2008
    Assignee: Universal Scientific Industrial Co., Ltd.
    Inventors: Ching-Chi Liu, Wen-Chang Tsai