Abstract: The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

Abstract: An embodiment is a structure including a first package including a first die, and a molding compound at least laterally encapsulating the first die, a second package bonded to the first package with a first set of conductive connectors, the second package comprising a second die, and an underfill between the first package and the second package and surrounding the first set of conductive connectors, the underfill having a first portion extending up along a sidewall of the second package, the first portion having a first sidewall, the first sidewall having a curved portion and a planar portion.

Abstract: A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.

Abstract: A gamma tap circuit includes: (i) a first gamma division circuit configured to generate a first gamma tap voltage by performing voltage division of an upper gamma tap voltage and a lower gamma tap voltage, in-sync with a first clock signal CK1 and a first complementary clock signal CK1b, which is 180° out-of-phase relative to CK1, (ii) a second gamma division circuit configured to generate a second gamma tap voltage by performing voltage division of the upper gamma tap voltage and the first gamma tap voltage, in-sync with a second clock signal CK2 and a second complementary clock signal CK2b, which is 180° out-of-phase relative to CK2, and (iii) a third gamma division circuit configured to generate a third gamma tap voltage by performing voltage division of the first gamma tap voltage and the lower gamma tap voltage, in response to CK2 and CK2b, which have a lower frequency relative to CK1 and CK1b.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.

Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.

Abstract: The disclosure provides an interposer substrate and a method for manufacturing the same. The method includes forming an insulating protection layer having a phosphorus compound on a substrate body, thereby providing toughness and strength as required when the thickness of the interposer substrate becomes too thin, and preventing substrate warpage when the substrate has a shrinkage stress or structural asymmetries.

Abstract: The disclosure provides an interposer substrate and a method for manufacturing the same. The method includes forming an insulating protection layer having a phosphorus compound on a substrate body, thereby providing toughness and strength as required when the thickness of the interposer substrate becomes too thin, and preventing substrate warpage when the substrate has a shrinkage stress or structural asymmetries.

Abstract: A low power consumption sigma-delta modulator architecture capable of dynamic detection of output signal strength to change dynamic range, a method for implementing low power consumption circuit thereof, and a method for automatically correcting and extending dynamic range of the sigma-delta modulator are provided. An automatic correction unit is utilized to detect system output signal strength of the sigma-delta modulator, compare system input signal specifications to come out multiple sets of dynamic range curves, and thereby extract an appropriate combination of system order and feed-forward coefficients so as to extend the system dynamic range. The circuit architecture of the automatic correction unit is in a digital circuit form, including a digital signal processor, a counter and register array, a comparator, a digital coefficient controller, a feed-forward gain control unit and a system order control unit.

Abstract: A low power consumption sigma-delta modulator architecture capable of dynamic detection of output signal strength to change dynamic range, a method for implementing low power consumption circuit thereof, and a method for automatically correcting and extending dynamic range of the sigma-delta modulator are provided. An automatic correction unit is utilized to detect system output signal strength of the sigma-delta modulator, compare system input signal specifications to come out multiple sets of dynamic range curves, and thereby extract an appropriate combination of system order and feed-forward coefficients so as to extend the system dynamic range. The circuit architecture of the automatic correction unit is in a digital circuit form, including a digital signal processor, a counter and register array, a comparator, a digital coefficient controller, a feed-forward gain control unit and a system order control unit.