Abstract: A surgical guiding device comprises: an elongate portion comprising a handpiece connection port and a shank connection port, wherein sizes of the handpiece connection port and the shank connection port comply with the ISO1797 standard; a height controlling portion being a hollow cylinder with two end openings, and having a first end portion and a second end portion; and a retaining portion disposed on an outer surface of the height controlling portion to adjust an installation height of the height controlling portion in relation to a surgical positioning device. The present invention comply with the ISO1797 standard and it is not necessary to persistently exchange the different sizes of movable sleeves to simply the implanting process, so as to shorten the time of the surgery and reduce the consumption of the cost. Therefore, the present invention also can reduce the discomfort and pain of the patient in treating process.

Abstract: An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. In an example, the method includes providing a substrate; forming a gate structure over the substrate; removing portions of the substrate to form a first recess and a second recess in the substrate, such that the gate structure interposes the first recess and the second recess; forming a nitrogen passivation layer in the substrate, such that the first recess and the second recess are defined by nitrogen passivated surfaces of the substrate; and forming doped source and drain features over the nitrogen passivated surfaces of the first recess and the second recess, the doped source and drain features filling the first and second recesses.

Abstract: An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. In an example, the method includes providing a substrate; forming a gate structure over the substrate; removing portions of the substrate to form a first recess and a second recess in the substrate, such that the gate structure interposes the first recess and the second recess; forming a nitrogen passivation layer in the substrate, such that the first recess and the second recess are defined by nitrogen passivated surfaces of the substrate; and forming doped source and drain features over the nitrogen passivated surfaces of the first recess and the second recess, the doped source and drain features filling the first and second recesses.

Abstract: A polysilicon gate structure includes a substrate, a silicon dioxide layer disposed over the substrate, a nitrogen-doped high-k dielectric layer disposed over the silicon dioxide layer, and a polysilicon gate disposed over the nitrogen-doped high-k dielectric layer.