Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Abstract: A monitoring method for photoresist regeneration, a process and a system for the same are provided. In the photoresist regeneration process of the invention, the solid content and viscosity of photoresist are adjusted by condensation under reduced pressure or dilution with photoresist thinner until the final solid content and viscosity reach the predetermined values thereof obtained through the quantification equation of the invention and then the waste photoresist is caused to pass through filters for removing pollution particles contained therein, such that the regenerated photoresist is acquired.

Abstract: A monitoring method for photoresist regeneration, a process and a system for the same are provided. In the photoresist regeneration process of the invention, the solid content and viscosity of photoresist are adjusted by condensation under reduced pressure or dilution with photoresist thinner until the final solid content and viscosity reach the predetermined values thereof obtained through the quantification equation of the invention and then the waste photoresist is caused to pass through filters for removing pollution particles contained therein, such that the regenerated photoresist is acquired.