Patents by Inventor Ching-Chu Tseng

Ching-Chu Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200006517
    Abstract: A structure of semiconductor device includes a gate structure, disposed on a substrate. A spacer is disposed on a sidewall of the gate structure, wherein the spacer is an l-like structure. A first doped region is disposed in the substrate at two sides of the gate structure. A second doped region is disposed in the substrate at the two sides of the gate structure, overlapping the first doped region. A silicide layer is disposed on the substrate within the second doped region, separating from the spacer by a distance. A dielectric layer covers over the second doped region and the gate structure with the spacer.
    Type: Application
    Filed: August 2, 2018
    Publication date: January 2, 2020
    Applicant: United Microelectronics Corp.
    Inventors: Yi-Fan Li, Po-Ching Su, Cheng-Chia Liu, Yen-Tsai Yi, Wei-Chuan Tsai, Chih-Chiang Wu, Ti-Bin Chen, Ching-Chu Tseng
  • Publication number: 20060094214
    Abstract: A semiconductor doping process uses hydrogen in a diffusion furnace to prevent platinum/gold atoms from gathering around a defect area of the semiconductor wafer. Platinum/gold atom aggregation caused by a micro defect in the semiconductor wafer is prevented in order to stabilize the semiconductor doping process and to improve reverse recover time (TRR) to further improve yield rate.
    Type: Application
    Filed: August 9, 2005
    Publication date: May 4, 2006
    Inventors: Chi-Ching Huang, Ching-Chu Tseng