Patents by Inventor Ching-Chun YEH

Ching-Chun YEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180013018
    Abstract: A solar cell includes a semiconductor substrate, a bus-bar electrode, a plurality of finger electrodes, and a heavily doped layer. The semiconductor substrate has a surface. The bus-bar electrode is on the surface of the semiconductor substrate and extending along a first direction. The finger electrodes are on the surface of the semiconductor substrate and extending along a second direction. One of two ends of each of the finger electrodes is connected to the bus-bar electrode. An angle created by the first direction and the second direction is less than 180 degrees. The heavily doped layer is formed on the surface of the semiconductor substrate and includes a first portion and a plurality of second portions. The first portion is extending along the first direction. Each of the second portions is extending from the first portion along the second direction and beneath the corresponding finger electrode.
    Type: Application
    Filed: July 5, 2017
    Publication date: January 11, 2018
    Applicant: NEO SOLAR POWER CORP.
    Inventors: Shan-Chuang PEI, Ching-Chun YEH, Wei-Chih HSU
  • Publication number: 20150129022
    Abstract: A back contact solar cell includes a solar cell substrate, an intrinsic layer, a second conductive type semiconductor layer and an electrode layer. The solar cell substrate includes a substrate body doped with a first conductive type semiconductor and a plurality of first conductive type semiconductor doped regions. The first conductive type semiconductor doped region is formed on a back side of the substrate body. The intrinsic layer is formed on the back side, and includes a plurality of first openings to expose the first conductive type semiconductor doped regions. The second conductive type semiconductor layer is deposited on the intrinsic layer, and includes a plurality of second openings correspond the first openings. The electrode layer includes a plurality of first electrode regions and a second electrode region. The first electrode regions are disposed on the first conductive type semiconductor doped regions.
    Type: Application
    Filed: June 24, 2014
    Publication date: May 14, 2015
    Inventors: Chorngjye HUANG, Feng-Yu YANG, Shan-Chuang PEI, Ching-Chun YEH, Tien-Shao CHUANG