Abstract: A selector structure may include a bottom electrode including a bottom low thermal conductivity (LTC) metal and a first bottom high thermal conductivity (HTC) metal, a first switching film on the bottom electrode and having an electrical resistivity switchable by an electric field, and a first top electrode on the first switching film and including a first top low thermal conductivity (LTC) metal and a first top high thermal conductivity (HTC) metal.

Abstract: An electronic component includes a passive device, a phase change material (PCM) switch, and an electrically insulating layer. The PCM switch is electrically connected to the passive device. The PCM switch includes a phase change material (PCM) layer, a first electrode contacting the PCM layer, a second electrode contacting the PCM layer, and a resistive heating element configured to heat a portion of the PCM layer. The electrically insulating layer is disposed between and thermally coupled to the PCM layer and the resistive heating element.

Abstract: A device structure may be formed by: forming dielectric layers with metal interconnect structures formed therein on a substrate; forming at least one heater element over the dielectric layers, each of the at least one heater element including a strip portion, a first terminal portion, and a second terminal portion; forming at least one heater-cover plate stack including a electrically-insulating and thermally-conductive plate including a first material and a semiconducting plate including a second material having a lower electrical resistivity than the first material over a one of the at least one heater element; and depositing and patterning a phase change material layer over the at least one heater-cover plate stack.

Abstract: A memory cell including a first electrode, a second electrode, a storage element layer and a liner layer is provided. The storage element layer is disposed between the first electrode and the second electrode. The liner layer covers the first electrode, the storage element layer and the second electrode. The liner layer includes a first liner portion and at least one second liner portion, wherein the first liner portion is disposed between the first electrode and the storage element layer, at least one second liner portion covers at least one sidewall of the first electrode, at least one sidewall of the storage element layer and at least one sidewall of the second electrode, and the at least one second liner portion is connected to the first liner portion.

Abstract: A device structure includes semiconductor devices located on a substrate; metal interconnect structures located in dielectric material layers overlying the semiconductor devices; and a non-Ohmic voltage-triggered switch including a first switch electrode that is electrically connected to one of the semiconductor devices through a subset of the metal interconnect structures, a second switch electrode, and a non-Ohmic switching material portion providing a non-Ohmic current-voltage characteristics and in contact with the first switch electrode and the second switch electrode. The non-Ohmic voltage-triggered switch may be used as an electrostatic discharge (ESD) switch.

Abstract: A phase change material switching circuit may be provided by forming a semiconductor circuit including a power amplifier and a low noise amplifier on a substrate; forming metal interconnect structures embedded in first dielectric material layers over the power amplifier and the low noise amplifier; forming a first phase change material (PCM) switch and a second PCM switch over the first dielectric material layers, wherein the first PCM switch includes a first electrode and a second electrode, and the second PCM switch includes a third electrode and a fourth electrode, wherein the second electrode is electrically connected to the third electrode to form a common electrical node; and electrically connecting a radio-frequency (RF) antenna to the common electrical node.

Abstract: A memory device is provided in various embodiments. The memory device, in those embodiments, has an ovonic threshold switching (OTS) selector comprising multiple layers of OTS materials to achieve a low leakage current and as well as relatively low threshold voltage for the OTS selector. The multiple layers can have at least one layer of low bandgap OTS material and at least one layer of high bandgap OTS material.

Abstract: A device structure includes semiconductor devices located on a substrate; metal interconnect structures located in dielectric material layers overlying the semiconductor devices; and a non-Ohmic voltage-triggered switch including a first switch electrode that is electrically connected to one of the semiconductor devices through a subset of the metal interconnect structures, a second switch electrode, and a non-Ohmic switching material portion providing a non-Ohmic current-voltage characteristics and in contact with the first switch electrode and the second switch electrode. The non-Ohmic voltage-triggered switch may be used as an electrostatic discharge (ESD) switch.

Abstract: A selector structure may include a bottom electrode including a bottom low thermal conductivity (LTC) metal and a first bottom high thermal conductivity (HTC) metal, a first switching film on the bottom electrode and having an electrical resistivity switchable by an electric field, and a first top electrode on the first switching film and including a first top low thermal conductivity (LTC) metal and a first top high thermal conductivity (HTC) metal.

Abstract: A memory device is provided in various embodiments. The memory device, in those embodiments, has an ovonic threshold switching (OTS) selector comprising multiple layers of OTS materials to achieve a low leakage current and as well as relatively low threshold voltage for the OTS selector. The multiple layers can have at least one layer of low bandgap OTS material and at least one layer of high bandgap OTS material.

Abstract: The present invention discloses a system for testing microfluid which is made with a disposable disc. The high sensitivity, high sensing accuracy, and quick response microfluidic disc is demonstrated in the present invention. It is note that easy to test microfluid without traditional detecting method, and then reduce energy and simplify procedure. Furthermore, to additive the microfluidic disc is useful to enhance blood typing, and hence raising the sensitivity by the video recognition of blood agglutination.

Abstract: The present invention discloses a system for testing microfluid which is made with a disposable disc. The high sensitivity, high sensing accuracy, and quick response microfluidic disc is demonstrated in the present invention. It is note that easy to test microfluid without traditional detecting method, and then reduce energy and simplify procedure. Furthermore, to additive the microfluidic disc is useful to enhance blood typing, and hence raising the sensitivity by the video recognition of blood agglutination.

Abstract: The present invention discloses a system for testing microfluid which is made with a disposable disc. The high sensitivity, high sensing accuracy, and quick response microfluidic disc is demonstrated in the present invention. It is note that easy to test microfluid without traditional detecting method, and then reduce energy and simplify procedure. Furthermore, to additive the microfluidic disc is useful to enhance blood typing, and hence raising the sensitivity by the video recognition of blood agglutination.

Abstract: A micro-machining tool is disclosed herein. It includes a micro-moving platform, a supporting device to support the micro-moving platform, an anti-rotation device embedded in a bar for preventing the supporting device from rotating, and a fixing device for fixing the supporting device for limiting its rotation as the bar is moving.