Abstract: A memory device is provided in various embodiments. The memory device, in those embodiments, has an ovonic threshold switching (OTS) selector comprising multiple layers of OTS materials to achieve a low leakage current and as well as relatively low threshold voltage for the OTS selector. The multiple layers can have at least one layer of low bandgap OTS material and at least one layer of high bandgap OTS material.

Abstract: A device structure includes semiconductor devices located on a substrate; metal interconnect structures located in dielectric material layers overlying the semiconductor devices; and a non-Ohmic voltage-triggered switch including a first switch electrode that is electrically connected to one of the semiconductor devices through a subset of the metal interconnect structures, a second switch electrode, and a non-Ohmic switching material portion providing a non-Ohmic current-voltage characteristics and in contact with the first switch electrode and the second switch electrode. The non-Ohmic voltage-triggered switch may be used as an electrostatic discharge (ESD) switch.

Abstract: A semiconductor structure includes a substrate including a first region and a second region; a first device disposed in the first region and a second device disposed in the second region; a first isolation disposed in the first region, wherein the first isolation is between a first source and a first drain, a first spacer overlaps the first isolation, the first isolation is separated from the first spacer by a first gate dielectric.

Abstract: A semiconductor structure includes a substrate including a first region and a second region; a first device disposed in the first region and a second device disposed in the second region; a first isolation disposed in the first region, wherein the first isolation is between a first source and a first drain, a first spacer overlaps the first isolation, the first isolation is separated from the first spacer by a first gate dielectric.

Abstract: A selector structure may include a bottom electrode including a bottom low thermal conductivity (LTC) metal and a first bottom high thermal conductivity (HTC) metal, a first switching film on the bottom electrode and having an electrical resistivity switchable by an electric field, and a first top electrode on the first switching film and including a first top low thermal conductivity (LTC) metal and a first top high thermal conductivity (HTC) metal.

Abstract: A memory device is provided in various embodiments. The memory device, in those embodiments, has an ovonic threshold switching (OTS) selector comprising multiple layers of OTS materials to achieve a low leakage current and as well as relatively low threshold voltage for the OTS selector. The multiple layers can have at least one layer of low bandgap OTS material and at least one layer of high bandgap OTS material.

Abstract: A semiconductor structure includes a substrate including a first region and a second region; a first device disposed in the first region and a second device disposed in the second region; a first isolation disposed in the first region, wherein the first isolation is between a first source and a first drain, a first spacer overlaps the first isolation, the first isolation is separated from the first spacer by a first gate dielectric.

Abstract: A semiconductor structure includes a semiconductor substrate including a first region and a second region; a first device disposed in the first region and a second device disposed in the second region, wherein a voltage level of the first device is greater than a voltage level of the second device; a first isolation disposed in the first region, wherein the first isolation includes a first depth; and a second isolation disposed in the second region, wherein the second isolation includes a second depth, and the first depth is greater than the second depth.

Abstract: A semiconductor structure includes a semiconductor substrate including a first region and a second region; a first device disposed in the first region and a second device disposed in the second region, wherein a voltage level of the first device is greater than a voltage level of the second device; a first isolation disposed in the first region, wherein the first isolation includes a first depth; and a second isolation disposed in the second region, wherein the second isolation includes a second depth, and the first depth is greater than the second depth.

Abstract: The present invention discloses a system for testing microfluid which is made with a disposable disc. The high sensitivity, high sensing accuracy, and quick response microfluidic disc is demonstrated in the present invention. It is note that easy to test microfluid without traditional detecting method, and then reduce energy and simplify procedure. Furthermore, to additive the microfluidic disc is useful to enhance blood typing, and hence raising the sensitivity by the video recognition of blood agglutination.

Abstract: The present invention discloses a system for testing microfluid which is made with a disposable disc. The high sensitivity, high sensing accuracy, and quick response microfluidic disc is demonstrated in the present invention. It is note that easy to test microfluid without traditional detecting method, and then reduce energy and simplify procedure. Furthermore, to additive the microfluidic disc is useful to enhance blood typing, and hence raising the sensitivity by the video recognition of blood agglutination.

Abstract: The present invention discloses a system for testing microfluid which is made with a disposable disc. The high sensitivity, high sensing accuracy, and quick response microfluidic disc is demonstrated in the present invention. It is note that easy to test microfluid without traditional detecting method, and then reduce energy and simplify procedure. Furthermore, to additive the microfluidic disc is useful to enhance blood typing, and hence raising the sensitivity by the video recognition of blood agglutination.

Abstract: A micro-machining tool is disclosed herein. It includes a micro-moving platform, a supporting device to support the micro-moving platform, an anti-rotation device embedded in a bar for preventing the supporting device from rotating, and a fixing device for fixing the supporting device for limiting its rotation as the bar is moving.