Abstract: An optoelectronic semiconductor device is provided. The optoelectronic semiconductor device includes a stack structure having a top surface and including a first semiconductor layer, a second semiconductor layer and an active region between the first semiconductor layer and the second semiconductor layer. The optoelectronic semiconductor device further includes a first insulating structure covering the stack structure and having a first upper surface and a sidewall. The first upper surface is coplanar with or lower than the top surface of the stack structure. The optoelectronic semiconductor device further includes a second insulating structure covering the first upper surface, the sidewall of the first insulating structure and the top surface of the stack structure. The first insulating structure directly contacts the second insulating structure.

Abstract: An optoelectronic semiconductor element is provided. The optoelectronic semiconductor element includes a semiconductor stack and a first metal layer. The semiconductor stack includes a first portion and a second portion stacked in sequence, with the second portion including an active region. The first metal layer is located on the first portion and is electrically connected to the first portion. A top-view outline of the first portion shows a first pattern, a top-view outline of the second portion shows a second pattern, and a top-view outline of the first metal layer shows a third pattern. The area ratio of the third pattern to the first pattern is from 0.5% to 10%.

Abstract: A laser device is provided. The laser device includes a stack of epitaxial layers, a first conductive layer, an intermediate layer, and a first electrode. The stack of epitaxial layers has a central region and an edge region. The stack of epitaxial layers includes a first reflective structure, an active region disposed on the first reflective structure, a second reflective structure disposed on the active region. The first conductive layer disposes on the stack of epitaxial layers and covers the central region and at least a part of the edge region. The intermediate layer has a first opening that corresponding to the central region of the stack of epitaxial layers, wherein the intermediate layer comprises insulating material or metal. The first electrode disposes on the first conductive layer.

Abstract: An optoelectronic semiconductor device is provided. The optoelectronic semiconductor device includes an epitaxial stack, a trench, a concave portion, a first contact structure, and a first electrode. The epitaxial stack includes a first semiconductor structure, an active structure on the first semiconductor structure, and a second semiconductor structure on the active structure, wherein the epitaxial stack has a first portion and a second portion, and the second semiconductor structure of the first portion is separated from the second semiconductor structure of the second portion. The trench is located between the first portion and the second portion. The concave portion is located in the first portion. The first contact structure is located in the concave portion. The first electrode covers the first contact structure. When the optoelectronic semiconductor device is operating, the first portion does not emit light.