Patents by Inventor Ching-Fang Chu

Ching-Fang Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8026571
    Abstract: A manufacturing method for a semiconductor-device isolation structure comprises providing a substrate with at least one shallow trench isolation structure, performing a salicide process that forms a recess on the surface of the shallow trench isolation structure, forming a cap film covering the substrate and filling the recess, performing an etching process to remove the cap film outside the recess, and forming a contact etch stop layer covering the substrate and filling the recess. Due to the filling recess with the cap film first, the contact etch stop layer covering the substrate and filling the recess does not have seams or voids.
    Type: Grant
    Filed: May 29, 2008
    Date of Patent: September 27, 2011
    Assignee: United Microelectronics Corp.
    Inventors: Shui-Yen Lu, Guang-Wei Ye, Shin-Chi Chen, Tsung-Wen Chen, Ching-Fang Chu, Chi-Horn Pai, Chieh-Te Chen
  • Publication number: 20090294927
    Abstract: A manufacturing method for a semiconductor-device isolation structure comprises providing a substrate with at least one shallow trench isolation structure, performing a salicide process that forms a recess on the surface of the shallow trench isolation structure, forming a cap film covering the substrate and filling the recess, performing an etching process to remove the cap film outside the recess, and forming a contact etch stop layer covering the substrate and filling the recess. Due to the filling recess with the cap film first, the contact etch stop layer covering the substrate and filling the recess does not have seams or voids.
    Type: Application
    Filed: May 29, 2008
    Publication date: December 3, 2009
    Inventors: Shui-Yen Lu, Guang-Wei Ye, Shin-Chi Chen, Tsung-Wen Chen, Ching-Fang Chu, Chi-Horn Pai, Chieh-Te Chen
  • Patent number: 6479372
    Abstract: A method for forming a hydrophilic surface on a silicon substrate during cleaning step after well implantation comprises providing a silicon substrate and an insulating layer is deposited thereon for mask alignment requirement. A photoresist layer is formed on the insulating layer and then a well pattern is transferred into the photoresist layer to expose partial the insulating layer thereunder the well defined. Next, implants are implanted into the photoresist layer, the insulating layer and the silicon substrate. Then the insulating layer exposed by the photoresist layer is removed and in-situ a native oxide is formed on the silicon substrate thereunder the well defined whereby changes the surface of the silicon substrate from hydrophobic into hydrophilic. A hard skin on the photoresist layer, resulting from implantation, is removed by oxygen plasma ashing and then the surface of the insulating layer and the silicon substrate are cleaned by conventional technologies.
    Type: Grant
    Filed: October 17, 2000
    Date of Patent: November 12, 2002
    Assignee: United Microelectronics Corp.
    Inventors: Jimmy Liou, Ching-Fang Chu