Patents by Inventor Chingfu Tsou

Chingfu Tsou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7207661
    Abstract: An ink-jet print head with a chamber sidewall heating mechanism includes a substrate, an insulation layer on the substrate, a main channel penetrating through the substrate, a plurality of V-shaped micro-channels each having a diverging end linking with the main channel and a converging end linking with an ink chamber on the insulation layer, and a nozzle plate with a plurality of orifices formed on the ink chamber. The V-shaped micro-channels are perpendicular to the main channel and parallel to and arranged on the insulation layer. Each chamber sidewall includes a heater structure to evaporate ink in the chamber to form a bubble, which pushes the ink in the chamber to eject from the orifice.
    Type: Grant
    Filed: July 14, 2004
    Date of Patent: April 24, 2007
    Assignee: Ligh Tuning Tech. Inc.
    Inventors: Bruce C. S. Chou, Chih-Hsien Yeh, Chingfu Tsou, Jer-Wei Chang, Chen-Chih Fan
  • Patent number: 7044392
    Abstract: A card device includes a substrate having two long sides and two short sides, and a sweep-type fingerprint sensor embedded into the substrate. The sweep-type fingerprint sensor has an exposed fingerprint sensing surface, and is disposed in a rectangular low-stress region. The rectangular low-stress region has a dimension substantially smaller than or equal to 30 mm*22 mm. The shortest distance from the low-stress region to each long side is substantially equal to 2 mm, and the shortest distance from the low-stress region to each short side is substantially equal to 2 mm.
    Type: Grant
    Filed: May 21, 2004
    Date of Patent: May 16, 2006
    Assignee: LighTuning Tech. Inc.
    Inventors: Chingfu Tsou, Bruce C. S. Chou
  • Publication number: 20050264615
    Abstract: An ink-jet print head with a chamber sidewall heating mechanism includes a substrate, an insulation layer on the substrate, a main channel penetrating through the substrate, a plurality of V-shaped micro-channels each having a diverging end linking with the main channel and a converging end linking with an ink chamber on the insulation layer, and a nozzle plate with a plurality of orifices formed on the ink chamber. The V-shaped micro-channels are perpendicular to the main channel and parallel to and arranged on the insulation layer. Each chamber sidewall includes a heater structure to evaporate ink in the chamber to form a bubble, which pushes the ink in the chamber to eject from the orifice.
    Type: Application
    Filed: July 14, 2004
    Publication date: December 1, 2005
    Inventors: Bruce Chou, Chih-Hsien Yeh, Chingfu Tsou, Jer-Wei Chang, Chen-Chih Fan
  • Publication number: 20040238647
    Abstract: A card device includes a substrate having two long sides and two short sides, and a sweep-type fingerprint sensor embedded into the substrate. The sweep-type fingerprint sensor has an exposed fingerprint sensing surface, and is disposed in a rectangular low-stress region. The rectangular low-stress region has a dimension substantially smaller than or equal to 30 mm*22 mm. The shortest distance from the low-stress region to each long side is substantially equal to 2 mm, and the shortest distance from the low-stress region to each short side is substantially equal to 2 mm.
    Type: Application
    Filed: May 21, 2004
    Publication date: December 2, 2004
    Inventors: Chingfu Tsou, Bruce C. S. Chou
  • Publication number: 20040119376
    Abstract: A method for manufacturing a bidirectionally vertical motion actuator includes the steps of: providing a silicon-on-insulator (SOI) wafer, which comprises a first silicon wafer, an insulation layer on a top surface of the first silicon wafer, and a second silicon wafer; forming a dielectric layer on the SOI wafer by way of deposition; depositing a conductive layer on the dielectric layer; etching the conductive layer, the dielectric layer and the second silicon wafer simultaneously to form a proper top trench; and forming an anisotropic etching groove on a backside of the SOI wafer. A bidirectionally vertical motion actuator formed using the method is also disclosed.
    Type: Application
    Filed: September 8, 2003
    Publication date: June 24, 2004
    Inventors: Bruce C. S. Chou, Chen-Chih Fan, Wei-Ting Lin, Ming-Lin Tsai, Wei-Leun Fang, Chingfu Tsou