Abstract: A method of manufacturing a gate structure includes at least the following steps. A gate dielectric layer is formed. A work function layer is deposited on the gate dielectric layer. A barrier layer is formed on the work function layer. A metal layer is deposited on the barrier layer to introduce fluorine atoms into the barrier layer. The barrier layer is formed by at least the following steps. A first TiN layer is formed on the work function layer. A top portion of the first TiN layer is converted into a trapping layer, and the trapping layer includes silicon atoms or aluminum atoms. A second TiN layer is formed on the trapping layer.

Abstract: A gate structure includes a metal layer, a barrier layer, and a work function layer. The barrier layer covers a bottom surface and sidewalls of the metal layer. The barrier layer includes fluorine and silicon, or fluorine and aluminum. The barrier layer is a tri-layered structure. The work function layer surrounds the barrier layer.

Abstract: An electronic device and a method for switching mode of a Thunderbolt connector thereof are provided. The electronic device includes a core unit, a PCIe device, a Thunderbolt control unit, a first switch circuit and a second switch circuit. The Thunderbolt control unit has a host mode and an end-point device mode. A common terminal of the first switch circuit is coupled to a PCIe port of the PCIe device. A first selection terminal of the first switch circuit is coupled to a first PCIe port of the core unit. A common terminal of the second switch circuit is coupled to a PCIe port of the Thunderbolt control unit. A first selection terminal of the second switch circuit is coupled to a second PCIe port of the core unit. A second selection terminal of the first switch circuit is coupled to a second selection terminal of the second switch circuit.

Abstract: An electronic device and a method for switching mode of a thunderbolt connector thereof are provided. The electronic device includes a core unit, a PCIE device, a thunderbolt control unit, a first switch circuit and a second switch circuit. The thunderbolt control unit has a host mode and an end-point device mode. A common terminal of the first switch circuit is coupled to a PCIE port of the PCIE device. A first selection terminal of the first switch circuit is coupled to a first PCIE port of the core unit. A common terminal of the second switch circuit is coupled to a PCIE port of the thunderbolt control unit. A first selection terminal of the second switch circuit is coupled to a second PCIE port of the core unit. A second selection terminal of the first switch circuit is coupled to a second selection terminal of the second switch circuit.

Abstract: A heat dissipating structure with a casing and at least a power-free heat-dissipating device therein is provided. The power-free heat-dissipating device is driven by an air stream outside and inside the casing to rotate. The rotating power-free heat-dissipating device introduces the air stream into the casing and expels the air stream from the casing so as to facilitate circulation favorable for heat dissipation, thereby enhancing heat dissipation, enabling power-free operation, and serving a power-saving purpose.